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101 条记录 (耗时 0.054 秒)

    Vertical boat and a method for making the same
    1.
    发明授权
    Vertical boat and a method for making the same 失效
    垂直船和制作相同的方法

    公开(公告)号：US5492229A

    公开(公告)日：1996-02-20

    申请号：US151386

    申请日：1993-11-12

    申请人： Takashi Tanaka ,  Jun Yoshikawa ,  Eiichi Toya ,  Atsuo Kitazawa ,  Kazunori Meguro ,  Tatsuo Nozawa ,  Yutaka Ishizuka ,  Yoshiyuki Watanabe ,  Masaru Seino ,  Hideo Nakanishi

    发明人： Takashi Tanaka ,  Jun Yoshikawa ,  Eiichi Toya ,  Atsuo Kitazawa ,  Kazunori Meguro ,  Tatsuo Nozawa ,  Yutaka Ishizuka ,  Yoshiyuki Watanabe ,  Masaru Seino ,  Hideo Nakanishi

    IPC分类号： C30B31/14 ,  H01L21/673 ,  A47F7/00

    CPC分类号： H01L21/67309 ,  C30B31/14

    摘要： A vertical boat for holding a plurality of semiconductor wafers comprising two end members (2) positioned at the top and the bottom of the vertical boat, and a plurality of support members (3,4,5,6,104) vertically mounted on the end members (2) for supporting the wafers, wherein each support member (3,4,5,6,104) is formed by a plate-like member having a series of slits (9,10,7,8,108) formed thereon in such a manner that a plurality of support arms are defined by the slits (9,10,7,8,108) at a predetermined interval, each support arm having a support projection (11,12,13,14,112) formed at the end thereof, and wherein the inner portions (P) of the wafer (1) is to be supported by the support projections (11,12,13,14,112) whereas the periphery of the wafer (1) does not contact the arms of the support members (3,4,5,6,104). The slits can be formed in two steps: forming a series of first slit portions on the plate-like member at a predetermined interval so as to retain two side walls of the plate-like member; and forming a series of second small slit portions on one of the side walls at the same interval so as to connect each second slit portion to the corresponding first slit portion.

    摘要翻译： 一种用于保持多个半导体晶片的垂直船，包括位于垂直船的顶部和底部的两个端部构件（2）和垂直安装在端部构件上的多个支撑构件（3,4,5,6,104） （2），用于支撑晶片，其中每个支撑构件（3,4,5,6,104）由其上形成有一系列狭缝（9,10,7,8,108）的板状构件形成，其方式使得 多个支撑臂由狭缝（9,10,7,8,108）以预定的间隔限定，每个支撑臂具有在其端部形成的支撑突起（11,12,13,14,112），并且其中内部 晶片（1）的部分（P）将由支撑突起（11,12,13,14,112）支撑，而晶片（1）的周边不与支撑部件（3,4）的臂接触， 5,6,104）。 狭缝可以分成两个步骤：以预定间隔在板状构件上形成一系列第一狭缝部分，以便保持板状构件的两个侧壁; 并且在一个侧壁上以相同的间隔形成一系列第二小狭缝部分，以将每个第二狭缝部分连接到相应的第一狭缝部分。

    Vertical boat
    2.
    发明授权
    Vertical boat 失效
    垂直船

    公开(公告)号：US5507873A

    公开(公告)日：1996-04-16

    申请号：US465607

    申请日：1995-06-05

    申请人： Yutaka Ishizuka ,  Yoshiyuki Watanabe ,  Tatsuo Nozawa ,  Shinzi Sawanobori ,  Tomio Kon

    发明人： Yutaka Ishizuka ,  Yoshiyuki Watanabe ,  Tatsuo Nozawa ,  Shinzi Sawanobori ,  Tomio Kon

    IPC分类号： B65D85/00 ,  B65D85/86 ,  H01L21/22 ,  H01L21/31 ,  H01L21/673 ,  B05C13/02

    CPC分类号： H01L21/67309

    摘要： A vertical boat for holding a plurality of semiconductor wafers comprising two end members (5) positioned at the top and the bottom of the vertical boat, and a plurality of support members (3,4) vertically mounted on the end members (5), the support members (3,4) including two front support members (3) located on the wafer inserting side and at least one rear support members (4) located on the rear side of the boat, each support member (3,4) having a series of slits (3a,4a) formed thereon at a predetermined interval and a series of support portions defined by the slits (3a,4a) for supporting semiconductor wafers (1), wherein the front support member (3) is generally formed by a circular arc plate, and wherein each angle (A,B) formed between the wafer inserting direction (X) and a line linking the front end (3b) of the support portion of the front support member (3) to the center (1a) of the wafer (1) is 100 degrees or more.

    摘要翻译： 一种用于保持多个半导体晶片的垂直船，包括位于垂直船的顶部和底部的两个端部构件（5）和垂直安装在端部构件（5）上的多个支撑构件（3,4） 支撑构件（3,4）包括位于晶片插入侧的两个前支撑构件（3）和位于船的后侧上的至少一个后支撑构件（4），每个支撑构件（3,4）具有 以一定间隔形成的一系列狭缝（3a，4a）和由用于支撑半导体晶片（1）的狭缝（3a，4a）限定的一系列支撑部分，其中前支撑构件（3）通常由 圆弧板，并且其中形成在所述晶片插入方向（X）和将所述前支撑构件（3）的支撑部分的前端（3b）连接到所述中心（1a）的线之间的每个角度（A，B） ）为100度以上。

    Method of making semi-conductor diffusion furnace components
    3.
    发明授权
    Method of making semi-conductor diffusion furnace components 失效
    制造半导体扩散炉部件的方法

    公开(公告)号：US4863657A

    公开(公告)日：1989-09-05

    申请号：US225028

    申请日：1988-07-27

    申请人： Takashi Tanaka ,  Yoshiyuki Watanabe

    发明人： Takashi Tanaka ,  Yoshiyuki Watanabe

    IPC分类号： C04B35/573 ,  C04B35/626 ,  C30B31/10 ,  C30B31/14 ,  C30B35/00 ,  H01L21/22

    CPC分类号： C04B35/573 ,  C30B31/10 ,  C30B31/14 ,  C30B35/002

    摘要： A sintered silicon carbide matrix component for a semi-conductor diffusion furnace results from sintering a mixture of three types of silicon carbide powder. The mixture includes fine silicon carbide having an average particle size of 0.1-10 microns, intermediate silicon carbide having an average particle size of 12-30 microns and coarse silicon carbide having an average particle size of 40-200 microns. The difference between the average particle sizes of the three types of powder is at least 10 microns.

    摘要翻译： 用于半导体扩散炉的烧结碳化硅基体组分是通过烧结三种类型的碳化硅粉末的混合物而产生的。 该混合物包括平均粒径为0.1-10微米的细小碳化硅，平均粒度为12-30微米的中间碳化硅和平均粒径为40-200微米的粗碳化硅。 三种粉末的平均粒度之差至少为10微米。

    Method for making a furnace component
    4.
    发明授权
    Method for making a furnace component 失效
    制造炉组件的方法

    公开(公告)号：US4859385A

    公开(公告)日：1989-08-22

    申请号：US213459

    申请日：1988-06-29

    申请人： Takashi Tanaka ,  Yoshiyuki Watanabe

    发明人： Takashi Tanaka ,  Yoshiyuki Watanabe

    IPC分类号： C04B35/573 ,  C04B41/52 ,  C30B31/10 ,  H01L21/22

    CPC分类号： C04B35/573 ,  C30B31/10

    摘要： A method for making a component for a semi-conductor diffusion furnace by blending two types of silicon carbide powders, that is, 10 parts by weight of intermediate silicon carbide having an average particle size of 10-30 microns and 10-25 parts by weight of coarse silicon carbide having an average particle size of 80-200 microns, thereby to make a mixture, admixing an organic binder with the mixture, thereafter granulating the mixture thereby to produce pellets, preforming the pellets by a rubber press thereby to produce a formed body, presintering the formed body thereby to produce a presintered body, and impregnating the presintered body with silicon and simultaneously sintering it.

    摘要翻译： 通过混合两种类型的碳化硅粉末，即10重量份平均粒径为10-30微米的中间碳化硅和10-25重量份的半导体扩散炉的组分制备方法 的平均粒度为80-200微米的粗碳化硅，由此制备混合物，将有机粘合剂与混合物混合，然后将混合物造粒，由此制备颗粒，通过橡胶压制机预处理颗粒，从而产生形成 从而预先烧结成形体，从而制造预烧结体，并用硅浸渍预烧结体并同时烧结。

    Use-side unit and air conditioner
    6.
    发明授权
    Use-side unit and air conditioner 有权
    使用侧机组和空调机

    公开(公告)号：US09562700B2

    公开(公告)日：2017-02-07

    申请号：US13142873

    申请日：2009-02-20

    申请人： Yoshiyuki Watanabe

    发明人： Yoshiyuki Watanabe

    IPC分类号： F24F3/153 ,  F24F11/08 ,  F24F11/00 ,  F24F3/14

    CPC分类号： F24F3/153 ,  F24F11/0008 ,  F24F11/30 ,  F24F2003/1446 ,  F24F2110/10 ,  F24F2110/20

    摘要： A use-side unit and an air conditioner that can feed out air at a target temperature into a target space are provided. A use-side evaporator that recovers moisture obtained by cooling and condensing the air to be fed out into the space to be air-conditioned or the like and dehumidifies it so as to obtain target relative humidity, a use-side condenser that heats the air having passed through the use-side evaporator by heat exchange, adjusts it to a target dry-bulb temperature and feeds it out into the space to be air-conditioned or the like, and a use-side controller that calculates a correction value if a difference between a dry-bulb temperature according to the detection of a temperature detector that detects a dry-bulb temperature of the air to be fed out into the target space and the target dry-bulb temperature is larger than a predetermined value and performs processing to correct a target intermediate dry-bulb temperature.

    摘要翻译： 提供了能够将目标温度下的空气供给到目标空间的使用侧单元和空调机。 一种利用侧蒸发器，其通过冷却冷凝空气而得到的水分，并将其送出到要进行空气调节的空间等中，并对其进行除湿以获得目标相对湿度，加热空气的使用侧冷凝器 通过热交换而通过使用侧蒸发器，将其调节到目标干球温度并将其输送到空调等空间中;以及使用侧控制器，其计算校正值，如果 根据检测到要送出到目标空间的空气的干球温度和目标干球温度的温度检测器的检测的干球温度之间的差大于预定值，并且执行处理 校正目标中间干球温度。

    Thin film device and manufacturing method thereof
    7.
    发明授权
    Thin film device and manufacturing method thereof 有权
    薄膜器件及其制造方法

    公开(公告)号：US09048319B2

    公开(公告)日：2015-06-02

    申请号：US13585441

    申请日：2012-08-14

    申请人： Kazushige Takechi ,  Shinnosuke Iwamatsu ,  Seiya Kobayashi ,  Yoshiyuki Watanabe ,  Toru Yahagi

    发明人： Kazushige Takechi ,  Shinnosuke Iwamatsu ,  Seiya Kobayashi ,  Yoshiyuki Watanabe ,  Toru Yahagi

    IPC分类号： H01L29/786

    CPC分类号： H01L21/46 ,  H01L21/441 ,  H01L29/401 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696

    摘要： With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer.

    摘要翻译： 对于使用氧化物半导体膜的TFT，存在在对源极/漏极进行等离子体蚀刻之后在氧化物半导体膜的表面区域产生氧缺陷从而增加截止电流的问题。 提供一种TFT，其包括：绝缘基板上的栅电极; 栅电极上的栅极绝缘膜; 在所述栅极绝缘膜上含有铟的氧化物半导体膜; 以及氧化物半导体膜上的源/漏电极。 此外，源极/漏极不叠加的氧化物半导体膜的一部分中的表面层的XPS光谱中的来自铟3d轨道的峰值位置偏离来自于源极/漏极的峰值位置的高能量侧 铟3d轨道在存在于表面层的下部的氧化物半导体区域的XPS光谱中。

    Process for preparing aromatic aldehyde compound
    8.
    发明授权
    Process for preparing aromatic aldehyde compound 有权
    制备芳香族醛化合物的方法

    公开(公告)号：US08618335B2

    公开(公告)日：2013-12-31

    申请号：US13122834

    申请日：2009-10-06

    申请人： Takashi Doi ,  Yoshihiro Yoshida ,  Shinji Yasuda ,  Yoshiyuki Watanabe ,  Satoru Fujitsu ,  Daisuke Douyama

    发明人： Takashi Doi ,  Yoshihiro Yoshida ,  Shinji Yasuda ,  Yoshiyuki Watanabe ,  Satoru Fujitsu ,  Daisuke Douyama

    IPC分类号： C07C45/29 ,  C07D317/54

    CPC分类号： C07C45/29 ,  C07C45/294 ,  C07C47/575

    摘要： An object of the present invention is to provide an industrially advantageous process for preparing a benzaldehyde compound from a benzyl alcohol compound with high yield.The present invention relates to a process for preparing an aromatic aldehyde compound represented by the formula (2); which comprises reacting an aromatic methyl alcohol compound represented by the formula (1); and a peroxide under a pH value of a reaction solution being pH 0.01 or higher and less than 10 in the presence of at least one metallic compound selected from a molybdenum compound and a tungsten compound, a quaternary ammonium salt and an organic phosphonium salt.

    摘要翻译： 本发明的目的是提供一种从苯甲醇化合物以高产率制备苯甲醛化合物的工业上有利的方法。 本发明涉及一种制备由式（2）表示的芳族醛化合物的方法; 其包括使由式（1）表示的芳族甲醇化合物反应; 和在至少一种选自钼化合物和钨化合物的金属化合物，季铵盐和有机鏻盐的存在下，反应溶液的pH值为0.01以上且小于10的过氧化物。

    ELECTRIC CURRENT SENSOR
    9.
    发明申请
    ELECTRIC CURRENT SENSOR 审中-公开
    电流传感器

    公开(公告)号：US20130293226A1

    公开(公告)日：2013-11-07

    申请号：US13774068

    申请日：2013-02-22

    申请人： Ikuo ONUMA ,  Yoshiyuki Watanabe ,  Masahiro Saito

    发明人： Ikuo ONUMA ,  Yoshiyuki Watanabe ,  Masahiro Saito

    IPC分类号： G01R33/02

    CPC分类号： G01R33/02 ,  G01R15/207

    摘要： Disclosed is an electric current sensor, including a conducting wire, a core having a hole portion mating with the conducting wire and a gap communicating with the hole portion, and a magnetic sensor having a magnetic flux detection part arranged in the gap.

    摘要翻译： 公开了一种电流传感器，包括导线，具有与导线配合的孔部的芯和与孔部连通的间隙，以及具有布置在间隙中的磁通检测部的磁传感器。