摘要:
An ion implanting apparatus includes: an electrostatic accelerating tube for causing an ion beam extracted from an ion source to have a desirable energy, and deflecting the ion beam to be incident on a target, the electrostatic accelerating tube including deflecting electrodes provided to interpose the ion beam therebetween. The deflecting electrodes include a first deflecting electrode and a second deflecting electrode to which different electric potentials from each other are set. The second deflecting electrode is provided on a side where the ion beam is to be deflected and includes an upstream electrode provided on an upstream side of the ion beam and a downstream electrode provided apart from the upstream electrode toward a downstream side. An electric potential of the upstream electrode and an electric potential of the downstream electrode are independently set from each other.
摘要:
An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed. A step of adjusting an analysis electromagnet current so that the beam current measured by the rear-stage beam instrument is maximum, that of processing the image data from the camera to obtain the deviation angle of the ion beam entering the analysis slit from the design beam orbit, and that of, if the deviation angle is not within an allowable range, adjusting the potential difference between the electrodes so that the ion beam is bent to a direction where the deviation angle becomes small, by the potential difference are performed one or more times until the deviation angle is within the allowable range.
摘要:
An apparatus is provided which is capable of measuring an angle between a holder and an ion beam without generating particles, with a simple structure, in a short time and at high accuracy even during an implantation state. An angle measurement apparatus is configured to: measure an angle of the ion beam by measuring beam plasma produced and emitting light when the ion beam collides with residual gas, with two cameras at two positions in a beam traveling direction; measure an angle of the holder by measuring light from a linear light source provided on the holder; and thereby measure the angle between the ion beam and the holder.
摘要:
An ion source capable of generating only a monoatomic ion is used as an ion source, and a gas supplying section is provided between a first mass spectrograph and a second mass spectrograph. In order to irradiate a cluster molecule ion, a polyatomic molecule gas is introduced into the gas supplying section. Then, electric charges are exchanged between the monoatomic ion generated at the ion source and a polyatomic molecule gas introduced into the gas supplying section, so that the cluster molecule ion is generated. Thus, the cluster molecule ion is dissociated at the second mass spectrograph. In order to irradiate a monoatomic ion beam, a monoatomic ion generated at the ion source is irradiated without introducing a gas into the gas supplying section.
摘要:
An analyzing electromagnet constituting an ion implanter has a first inner coil, a second inner coil, three first outer coils, three second outer coils, and a yoke. The inner coils are saddle-shaped coils cooperating with each other to generate a main magnetic field which bends an ion beam in the X direction. Each of the outer coils is a saddle-shaped coil which generates a sub-magnetic field correcting the main magnetic field. Each of the coils has a configuration where a notched portion is disposed in a fan-shaped cylindrical stacked coil configured by: winding a laminations of an insulation sheet and a conductor sheet in multiple turn on an outer peripheral face of a laminated insulator; and forming a laminated insulator on an outer peripheral face.
摘要:
The projection distances of connecting portions of a coil are reduced, thereby enabling the size and power consumption of an analyzing electromagnet to be reduced, and therefore the size and power consumption of an ion implanting apparatus are enabled to be reduced.[Means for Resolution] An analyzing electromagnet 200 constituting an ion implanting apparatus has a first inner coil 206, a second inner coil 212, three first outer coils 218, three second outer coils 224, and a yoke 230. The inner coils 206, 212 are saddle-shaped coils cooperating with each other to generate a main magnetic field which bends an ion beam in the X direction. Each of the outer coils 218, 224 is a saddle-shaped coil which generates a sub-magnetic field correcting the main magnetic field. Each of the coils has a configuration where a notched portion is disposed in a fan-shaped cylindrical stacked coil configured by: winding a laminations of an insulation sheet and a conductor sheet in multiple turn on an outer peripheral face of a laminated insulator; and forming a laminated insulator on an outer peripheral face,
摘要:
This ion source 2 has the heating furnace 4 for heating a solid material 6 to produce a vapor 8, the plasma production vessel 16 for producing a plasma 24 by ionizing this vapor 8, and the vapor conduit tube 10 connecting both the heating furnace 4 and the plasma production vessel 16. In this ion source 2, using indium fluoride 6a as the solid material 6, an ion beam 30 containing indium ions is led out, while the temperature of the heating furnace 4 is kept in a range from 450° to 1170° C., and below the temperature of the plasma production vessel 16.
摘要:
There is provided a fat composition that makes possible to prepare stir-fried food, deep-fried food or mayonnaise. The fat composition contains an emulsifier having an HLB of not more than 5 in an amount of 0.1 to 3% by weight.
摘要:
A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole.
摘要:
An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed. A step of adjusting an analysis electromagnet current so that the beam current measured by the rear-stage beam instrument is maximum, that of processing the image data from the camera to obtain the deviation angle of the ion beam entering the analysis slit from the design beam orbit, and that of, if the deviation angle is not within an allowable range, adjusting the potential difference between the electrodes so that the ion beam is bent to a direction where the deviation angle becomes small, by the potential difference are performed one or more times until the deviation angle is within the allowable range.