摘要:
To provide an arrangement structure of a sound system in a motorcycle which can ensure the operability of a sound operation unit while ensuring the visibility of a meter. In a motorcycle which arranges a meter indicating information on a vehicle and a sound operation unit for providing a reproduction operation or the like in a sound system in the vicinity of a steering portion, the meter and the sound operation unit are constituted as bodies separate from each other. The meter and the sound operation unit are arranged, as viewed in the axial direction of a head pipe which supports a steering portion, in front of and behind the head pipe.
摘要:
To provide an arrangement structure of a sound system in a motorcycle which can ensure the operability of a sound operation unit while ensuring the visibility of a meter. In a motorcycle which arranges a meter indicating information on a vehicle and a sound operation unit for providing a reproduction operation or the like in a sound system in the vicinity of a steering portion, the meter and the sound operation unit are constituted as bodies separate from each other. The meter and the sound operation unit are arranged, as viewed in the axial direction of a head pipe which supports a steering portion, in front of and behind the head pipe.
摘要:
A digital circuit portion (6) and an analog circuit portion (7) are formed in a surface portion of a semiconductor substrate (4). A via (20) is formed in a region between the digital circuit portion (6) and the analog circuit portion (7). The via (20) extends through the semiconductor substrate (4) from a front surface to a back surface thereof, and is made of a dielectric (2) having its surface covered by a metal (1). The metal (1) is grounded. Signal interference between the analog circuit portion (6) and the digital circuit portion (7) is reduced by the via (20).
摘要:
A fin-semiconductor region (13) is formed on a substrate (11). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (13), and oxygen or nitrogen is further introduced as a second impurity in the upper portion and side portions of the fin-semiconductor region (13).
摘要:
In a semiconductor device having a through-hole electrode and a manufacturing method thereof, a dummy groove hole portion for forming insulating portion insulating wirings from each other is provided, to surround a rewiring layer including a through-hole electrode on a back surface of a semiconductor substrate. This allows the wirings to be insulated from each other just by removing the metal layer existing at a bottom portion of the dummy groove hole portion. Thus, a reduction in the processing time can be realized.
摘要:
A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.
摘要:
An acceleration sensor includes a weight; a base portion, a beam; and a piezo resistance element. The weight is arranged to displace upon receiving acceleration. The base portion is disposed around the weight apart from the weight. The beam has one end portion connected to the weight and the other end portion connected to the base portion. The beam also has a thick layer portion and a thin layer portion having a thickness smaller than that of the thick layer portion. The piezo resistance element is disposed over the thick layer portion and the thin layer portion.
摘要:
A fin-semiconductor region (13) is formed on a substrate (11). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (13), and oxygen or nitrogen is further introduced as a second impurity in the upper portion and side portions of the fin-semiconductor region (13).
摘要:
According to the present invention, a SOI substrate includes a first silicon substrate having first and second surfaces; a second silicon substrate having first and second surfaces; and a first insulating layer formed between first surface of the first silicon substrate and the first surface of the second silicon substrates. The first surface of the first silicon substrate is partly depressed to form a thin-layer region thereat. The first insulating layer is formed at least in the thin-layer region.
摘要:
An acceleration sensor includes a mass and a supporting member linked by a flexible beam. A strain detector having low-resistance areas at both ends is formed near a boundary between the beam and the mass or between the beam and the supporting member. A dielectric film formed on the supporting member and the beam has multiple contact holes disposed over each low-resistance area. Wiring formed on the dielectric film is connected to the low-resistance areas through the contact holes. The provision of multiple contact holes for each low-resistance area extends the life of the acceleration sensor by preventing sensor failure due to the separation or other failure of any single contact.