SEMICONDUCTOR SENSOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR SENSOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体传感器及其制造方法

    公开(公告)号:US20060283248A1

    公开(公告)日:2006-12-21

    申请号:US11277723

    申请日:2006-03-28

    IPC分类号: G01P15/09

    摘要: A semiconductor sensor 1 includes: a frame 21 having an opening; an actuation diaphragm 16 provided inside the frame 21 in a spaced-apart relationship with respect to the frame 21; a plurality of flexible beams 19a, 19b provided to interconnect the frame 21 and the actuation diaphragm 16, each of the flexible beams 19a, 19b having piezo resistance elements 30a, 30b, 30c thereon; metallic wiring lines 33 provided on one major surfaces of the respective flexible beams 19a, 19b for connecting each of the piezo resistance elements 30a, 30b, 30c to each other; and a plurality of thermal stress absorbing portions provided on the other major surfaces of the respective flexible beams 19a, 19b for absorbing thermal stresses developed in the beams 19a, 19b due to the difference of coefficients of thermal expansion between the respective beams 19a, 19b and the corresponding metallic wiring lines 33.

    摘要翻译: 半导体传感器1包括:具有开口的框架21; 设置在框架21内相对于框架21间隔的致动隔膜16; 设置用于互连框架21和致动隔膜16的多个柔性梁19b,每个柔性梁19a,19b上具有压电电阻元件30a,30b,30c; 金属布线33设置在各个柔性梁191a,19b的一个主表面上,用于将压电电阻元件30a,30b,30c中的每一个彼此连接; 以及多个热应力吸收部分,其设置在相应的柔性梁19a,19b的另一个主表面上,用于吸收在梁19a,19b中产生的热应力,这是由于各个梁之间的热膨胀系数的差异 19a,19b和相应的金属布线33。

    Use-side unit and air conditioner
    3.
    发明授权
    Use-side unit and air conditioner 有权
    使用侧机组和空调机

    公开(公告)号:US09562700B2

    公开(公告)日:2017-02-07

    申请号:US13142873

    申请日:2009-02-20

    摘要: A use-side unit and an air conditioner that can feed out air at a target temperature into a target space are provided. A use-side evaporator that recovers moisture obtained by cooling and condensing the air to be fed out into the space to be air-conditioned or the like and dehumidifies it so as to obtain target relative humidity, a use-side condenser that heats the air having passed through the use-side evaporator by heat exchange, adjusts it to a target dry-bulb temperature and feeds it out into the space to be air-conditioned or the like, and a use-side controller that calculates a correction value if a difference between a dry-bulb temperature according to the detection of a temperature detector that detects a dry-bulb temperature of the air to be fed out into the target space and the target dry-bulb temperature is larger than a predetermined value and performs processing to correct a target intermediate dry-bulb temperature.

    摘要翻译: 提供了能够将目标温度下的空气供给到目标空间的使用侧单元和空调机。 一种利用侧蒸发器,其通过冷却冷凝空气而得到的水分,并将其送出到要进行空气调节的空间等中,并对其进行除湿以获得目标相对湿度,加热空气的使用侧冷凝器 通过热交换而通过使用侧蒸发器,将其调节到目标干球温度并将其输送到空调等空间中;以及使用侧控制器,其计算校正值,如果 根据检测到要送出到目标空间的空气的干球温度和目标干球温度的温度检测器的检测的干球温度之间的差大于预定值,并且执行处理 校正目标中间干球温度。

    Thin film device and manufacturing method thereof
    4.
    发明授权
    Thin film device and manufacturing method thereof 有权
    薄膜器件及其制造方法

    公开(公告)号:US09048319B2

    公开(公告)日:2015-06-02

    申请号:US13585441

    申请日:2012-08-14

    IPC分类号: H01L29/786

    摘要: With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer.

    摘要翻译: 对于使用氧化物半导体膜的TFT,存在在对源极/漏极进行等离子体蚀刻之后在氧化物半导体膜的表面区域产生氧缺陷从而增加截止电流的问题。 提供一种TFT,其包括:绝缘基板上的栅电极; 栅电极上的栅极绝缘膜; 在所述栅极绝缘膜上含有铟的氧化物半导体膜; 以及氧化物半导体膜上的源/漏电极。 此外,源极/漏极不叠加的氧化物半导体膜的一部分中的表面层的XPS光谱中的来自铟3d轨道的峰值位置偏离来自于源极/漏极的峰值位置的高能量侧 铟3d轨道在存在于表面层的下部的氧化物半导体区域的XPS光谱中。

    Process for preparing aromatic aldehyde compound
    5.
    发明授权
    Process for preparing aromatic aldehyde compound 有权
    制备芳香族醛化合物的方法

    公开(公告)号:US08618335B2

    公开(公告)日:2013-12-31

    申请号:US13122834

    申请日:2009-10-06

    IPC分类号: C07C45/29 C07D317/54

    摘要: An object of the present invention is to provide an industrially advantageous process for preparing a benzaldehyde compound from a benzyl alcohol compound with high yield.The present invention relates to a process for preparing an aromatic aldehyde compound represented by the formula (2); which comprises reacting an aromatic methyl alcohol compound represented by the formula (1); and a peroxide under a pH value of a reaction solution being pH 0.01 or higher and less than 10 in the presence of at least one metallic compound selected from a molybdenum compound and a tungsten compound, a quaternary ammonium salt and an organic phosphonium salt.

    摘要翻译: 本发明的目的是提供一种从苯甲醇化合物以高产率制备苯甲醛化合物的工业上有利的方法。 本发明涉及一种制备由式(2)表示的芳族醛化合物的方法; 其包括使由式(1)表示的芳族甲醇化合物反应; 和在至少一种选自钼化合物和钨化合物的金属化合物,季铵盐和有机鏻盐的存在下,反应溶液的pH值为0.01以上且小于10的过氧化物。

    ELECTRIC CURRENT SENSOR
    6.
    发明申请
    ELECTRIC CURRENT SENSOR 审中-公开
    电流传感器

    公开(公告)号:US20130293226A1

    公开(公告)日:2013-11-07

    申请号:US13774068

    申请日:2013-02-22

    IPC分类号: G01R33/02

    CPC分类号: G01R33/02 G01R15/207

    摘要: Disclosed is an electric current sensor, including a conducting wire, a core having a hole portion mating with the conducting wire and a gap communicating with the hole portion, and a magnetic sensor having a magnetic flux detection part arranged in the gap.

    摘要翻译: 公开了一种电流传感器,包括导线,具有与导线配合的孔部的芯和与孔部连通的间隙,以及具有布置在间隙中的磁通检测部的磁传感器。

    Display device and electronic equipment employing piezoelectric speaker
    9.
    发明授权
    Display device and electronic equipment employing piezoelectric speaker 失效
    显示装置和采用压电扬声器的电子设备

    公开(公告)号:US06794798B2

    公开(公告)日:2004-09-21

    申请号:US10106118

    申请日:2002-03-27

    IPC分类号: H01L4108

    CPC分类号: H04R5/02 H04R2499/15

    摘要: A display device and an electronic equipment having a high reproduction quality can be provided without hampering the scalability or the portability of the display device and the electronic equipment. A notebook computer includes a main body, a keyboard, a display device and a display panel. The display panel is formed of a flat type, which is made of an LCD or a PDP. The display device can be folded toward or folded away from the keyboard side of the main body. The speaker panel is completely formed as a planar shape and is movably installed with respect to a reception slit prepared at two side surfaces of the display device. The speaker panel is movably jointed to allow a relative position between the flat panel display and the speaker panel to be changed by moving the speaker panel.

    摘要翻译: 可以提供具有高再现质量的显示设备和电子设备,而不会妨碍显示设备和电子设备的可扩展性或可移植性。 笔记本电脑包括主体,键盘,显示装置和显示面板。 显示面板由LCD或PDP制成的平板型。 显示装置可以朝向或折叠离开主体的键盘侧折叠。 扬声器面板完全形成为平面形状,并相对于在显示装置的两个侧表面处制备的接收狭缝可移动地安装。 扬声器面板可移动地连接以允许通过移动扬声器面板来改变平板显示器和扬声器面板之间的相对位置。

    Method of recovering sulfur from minerals and other sulfur-containing compounds
    10.
    发明授权
    Method of recovering sulfur from minerals and other sulfur-containing compounds 失效
    从矿物质和其他含硫化合物中回收硫的方法

    公开(公告)号:US06696037B1

    公开(公告)日:2004-02-24

    申请号:US09676513

    申请日:2000-10-02

    IPC分类号: C01B1700

    摘要: A sulfurous compound such as a sulfur-rich “float” (concentrate) obtained by flotation of the residue from the leaching of a zinc concentrate is heated at a temperature not lower than the melting point of sulfur but below its boiling point, preferably not higher than 200° C., more preferably not higher than 140° C., and the evolving gas containing sulfur vapor is cooled at a temperature less than the melting point of sulfur, preferably at ordinary temperature, to condense sulfur.

    摘要翻译: 通过将浸出锌精矿的残渣浮选而获得的富硫“漂浮”(浓缩物)的亚硫酸化合物在不低于硫的熔点但低于其沸点的温度下加热,优选不高于 优选不高于140℃,并且含有硫蒸汽的放出气体在低于硫的熔点的温度下被冷却,优选在常温下冷凝以使硫浓缩。