公开(公告)号：US5814832A

公开(公告)日：1998-09-29

申请号：US478656

申请日：1995-06-07

申请人： Toshihiko Takeda ,  Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

发明人： Toshihiko Takeda ,  Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

IPC分类号： H01J1/308 ,  H01L29/06 ,  H01L29/04 ,  H01L29/47

CPC分类号： H01J1/308 ,  Y10S257/928

摘要： An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is arranged on a surface of the P-type semiconductor layer. Plural P.sup.+ -type area units are positioned under and facing the Schottky barrier electrode. An N.sup.+ -type area is disposed in the vicinity of the P.sup.+ -type units. The impurity concentration is such as to cause an avalanche breakdown in at least a portion of the surfaces.

摘要翻译： 电子发射半导体器件设置有布置在具有杂质浓度的半导体衬底上的P型半导体层。 在P型半导体层的表面上配置有肖特基势垒电极。 多个P +型区域单元位于并面向肖特基势垒电极。 在P +型单元附近设置N +型区域。 杂质浓度使得至少部分表面产生雪崩击穿。

公开(公告)号：US5391956A

公开(公告)日：1995-02-21

申请号：US994459

申请日：1992-12-21

申请人： Nobuo Watanabe ,  Takeo Tsukamoto ,  Masahiko Okunuki

发明人： Nobuo Watanabe ,  Takeo Tsukamoto ,  Masahiko Okunuki

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC分类号： H01J9/025 ,  H01J1/3042

摘要： An electron emitting device with an insulating layer on a substrate. The insulating layer has a hollow part in which a conical electrode is formed. A conductive layer on the insulating layer has an aperture on the hollow part of the insulating layer. The hollow part is formed by etching utilizing an ion beam.

摘要翻译： 一种在衬底上具有绝缘层的电子发射器件。 绝缘层具有形成有圆锥形电极的中空部分。 绝缘层上的导电层在绝缘层的中空部分上具有孔。 中空部分通过使用离子束的蚀刻形成。

公开(公告)号：US5202571A

公开(公告)日：1993-04-13

申请号：US725476

申请日：1991-07-03

申请人： Keiji Hirabayashi ,  Noriko Kurihara ,  Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

发明人： Keiji Hirabayashi ,  Noriko Kurihara ,  Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

IPC分类号： H01J1/308

CPC分类号： H01J1/308

摘要： An electron emitting device is provided with a p-semiconductor layer formed on a semiconductor substrate. The p-semiconductor layer is composed of a diamond layer.

摘要翻译： 电子发射器件设置有形成在半导体衬底上的p半导体层。 p半导体层由金刚石层构成。

公开(公告)号：US4999083A

公开(公告)日：1991-03-12

申请号：US415766

申请日：1989-10-02

申请人： Nobuo Watanabe ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Masahiko Okunuki

发明人： Nobuo Watanabe ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Masahiko Okunuki

IPC分类号： H01L21/302 ,  C23F1/02 ,  H01L21/306

CPC分类号： C23F1/02 ,  H01L21/30604

摘要： A fine working method of a crystalline material comprises forming an ion injection region in a crystalline material by irradiating a focused ion beam on a crystalline material and subsequently removing a predetermined region of the ion injection region by applying a chemical etching treatment. The method includes performing ion injection where no removal of the predetermined region occurs even if the crystalline material is exposed to an etchant. The predetermined region is removed by injecting an etchant into the ion injection region.

公开(公告)号：US5554859A

公开(公告)日：1996-09-10

申请号：US557678

申请日：1995-11-13

申请人： Takeo Tsukamoto ,  Nobuo Watanabe ,  Toshihiko Takeda ,  Masahiko Okunuki

发明人： Takeo Tsukamoto ,  Nobuo Watanabe ,  Toshihiko Takeda ,  Masahiko Okunuki

IPC分类号： H01J1/308 ,  H01J9/02 ,  H01L29/06 ,  H01L29/12

CPC分类号： H01J1/308 ,  H01J9/022

摘要： This is an electron emission with a semiconductor substrate having a p-type semiconductor layer whose impurity concentration falls within a concentration range for causing an avalanche breakdown in a least a portion of a surface of the semiconductor layer. A Schottky electrode is connected to the semiconductor layer. There are a means for applying a reverse bias voltage between the Schottky electrode and the p-type semiconductor layer to cause the Schotty electrode to emit electrons, and a lead electrode, formed at a proper position, for externally guiding the emitted electrons. At least a portion of the Schottky electrode is formed of a thin film of a material selected from metals of Group 1A, Group 2A, Group 3A, and lanthanoids, metal silicides of Group 1A, Group 2A, Group Group 3A, and lanthanoids, and metal borides of Group 1A, Group 2A, Group 3A, and lanthanoids, and metal carbides of Group 4A. A film thickness of the Schotty electrode is set to be not more than 100 .ANG..

摘要翻译： 这是具有半导体衬底的电子发射，其半导体衬底具有p型半导体层，其杂质浓度落在半导体层的表面的至少一部分中引起雪崩击穿的浓度范围内。 肖特基电极连接到半导体层。 存在在肖特基电极和p型半导体层之间施加反向偏置电压以使Schotty电极发射电子的装置和形成在适当位置的引线电极，用于外部引导发射的电子。 肖特基电极的至少一部分由选自组1A，组2A，组3A和镧系元素的金属的薄膜，组1A，组2A，组3A和镧系元素的金属硅化物形成，以及 第1A组，第2A组，第3A组和镧系金属硼化物，以及4A组金属碳化物。 将Schotty电极的膜厚设定为不超过100。

公开(公告)号：US5107311A

公开(公告)日：1992-04-21

申请号：US560769

申请日：1990-07-31

申请人： Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

发明人： Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

IPC分类号： H01L33/00 ,  H01L33/24 ,  H01L33/30

CPC分类号： H01L33/24 ,  H01L33/0008 ,  H01L33/0033 ,  H01L33/0054 ,  H01L33/305

摘要： A semiconductor light emitting device comprises a substrate, an n-type semiconductor layer formed on the substrate, a p-type semiconductor layer formed on a portion of a surface of the n-type semiconductor layer, an electrode for applying a reverse biasing voltage to the PN junction to cause an avalanche breakdown and an area formed in a portion of the PN junction. The p-type semiconductor layers forms a planar type PN junction with the n-type semiconductor layer. The area formed in a portion of the PN junction has a lower break down voltage than that of other area.

公开(公告)号：US5760417A

公开(公告)日：1998-06-02

申请号：US410396

申请日：1995-03-27

申请人： Nobuo Watanabe ,  Norio Kaneko ,  Masahiko Okunuki ,  Takeo Tsukamoto

发明人： Nobuo Watanabe ,  Norio Kaneko ,  Masahiko Okunuki ,  Takeo Tsukamoto

IPC分类号： H01J1/308 ,  H01J9/02 ,  H01L29/47 ,  H01L29/812 ,  H01L31/108 ,  H01L33/00

CPC分类号： H01J9/022 ,  H01J1/308

摘要： In a semiconductor electron emission device for causing an avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction between a metallic material or metallic compound material and a p-type semiconductor, and externally emitting electrons from a solid-state surface, a p-type semiconductor region (first region) for causing the avalanche breakdown contacts a p-type semiconductor region (second region) for supplying carriers to the first region, and a semi-insulating region is formed around the first region.

摘要翻译： 在通过向金属材料或金属化合物材料和p型半导体之间的肖特基势垒结施加反向偏置电压并从外部从固态表面发射电子来引起雪崩击穿的半导体电子发射器件中，p 用于引起雪崩击穿的p型半导体区域（第一区域）接触用于向第一区域提供载流子的p型半导体区域（第二区域），并且在第一区域周围形成半绝缘区域。

公开(公告)号：US5414272A

公开(公告)日：1995-05-09

申请号：US224192

申请日：1994-04-07

申请人： Nobuo Watanabe ,  Masahiko Okunuki ,  Takeo Tsukamoto

发明人： Nobuo Watanabe ,  Masahiko Okunuki ,  Takeo Tsukamoto

IPC分类号： H01L29/872 ,  H01J1/308 ,  H01J9/02 ,  H01L29/47 ,  H01L29/48 ,  H01L29/56 ,  H01L29/64

CPC分类号： H01J1/308 ,  H01J9/022

摘要： A semiconductor element emission element having a Schottky junction in a surface region of a semiconductor, comprises a first region having a first carrier concentration, a second region having a second carrier concentration, and a third region having a third carrier concentration. All of the regions are located below an electrode forming the Schottky junction. The first, second, and third carrier concentrations satisfy a condition that the first carrier concentration of the first region is higher than the second carrier concentration of the second region and that the second carrier concentration of the second region is higher than the third carrier concentration of the third region. The first, second, and third regions have a structure that at least one second region having the second carrier concentration is located inside the third region of the third carrier concentration, and that at lease one first region having the first carrier concentration is located inside said second region having the second carrier concentration.

摘要翻译： 在半导体的表面区域中具有肖特基结的半导体元件发光元件包括具有第一载流子浓度的第一区域，具有第二载流子浓度的第二区域和具有第三载流子浓度的第三区域。 所有区域都位于形成肖特基结的电极之下。 第一，第二和第三载流子浓度满足第一区域的第一载流子浓度高于第二区域的第二载流子浓度，并且第二区域的第二载流子浓度高于第二区域的第三载流子浓度的条件 第三个地区。 第一，第二和第三区域具有以下结构：具有第二载流子浓度的至少一个第二区域位于第三载流子浓度的第三区域内，并且至少具有第一载流子浓度的第一区域位于所述 第二区域具有第二载流子浓度。

公开(公告)号：US5138402A

公开(公告)日：1992-08-11

申请号：US807613

申请日：1991-12-13

申请人： Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Nobuo Watanabe ,  Masahiko Okunuki

发明人： Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Nobuo Watanabe ,  Masahiko Okunuki

IPC分类号： H01J9/02 ,  H01J1/308

CPC分类号： H01J1/308

摘要： A semiconductor electron emitting device comprising a Schottky electrode and a p type semiconductor. The Schottky electrode is disposed on the p type semiconductor and defines a junction formed therebetween. The p type semiconductor has an impurity concentration within a predetermined range adapted for causing an avalanche breakdown responsive to a reverse biasing voltage applied between said p type semiconductor and said Schottky electrode. Electrons are emitted from the Schottky electrode in response to the application of the reverse bias voltage.

摘要翻译： 一种包括肖特基电极和p型半导体的半导体电子发射器件。 肖特基电极设置在p型半导体上并且限定其间形成的结。 p型半导体具有适于根据施加在所述p型半导体和所述肖特基电极之间的反向偏置电压引起雪崩击穿的预定范围内的杂质浓度。 响应于反向偏置电压的应用，电子从肖特基电极发射。

公开(公告)号：US5285079A

公开(公告)日：1994-02-08

申请号：US48946

申请日：1993-04-20

申请人： Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

发明人： Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

IPC分类号： H01J1/308 ,  H01L29/161 ,  H01J1/14 ,  H01L29/205 ,  H01L29/225

CPC分类号： H01J1/308

摘要： An electron emitting device is provided for use in a flat display, an electron beam drawing apparatus, a CRT display and so on. The electron emitting device comprises a first layer having a first bandgap, a second layer formed on the first layer and having the first bandgap, a third layer formed on the second layer and having a second bandgap, which is narrower than the first bandgap, and a fourth layer formed on the third layer and having an electron emitting surface. According to this structure, a high electron emission efficiency can be obtained.

摘要翻译： 电子发射装置用于平板显示器，电子束描绘装置，CRT显示器等。 电子发射器件包括具有第一带隙的第一层，形成在第一层上并具有第一带隙的第二层，形成在第二层上并具有比第一带隙窄的第二带隙的第三层，以及 形成在第三层上并具有电子发射表面的第四层。 根据该结构，可以获得高电子发射效率。