摘要:
In a method wherein arcs are struck across a material to vaporize into ultra-fine particles and an electrode, thereby to manufacture the ultra-fine particles; the material to turn into the ultra-fine particles is arranged for at least either of the electrodes, and plasma currents are generated from the material and the electrode, whereby the formation rate of the ultra-fine particles per unit input is increased, and the material is formed in the shape of a rod or a wire, and a feeder capable of continuously supplying the material is disposed, whereby the ultra-fine particles can be continuously manufactured.
摘要:
An apparatus for producing ultrafine particles by arc energy characterized by disposing an electrode inclinedly as to a base material so as to generate a magnetic blow to arc, disposing a suction opening at the direction of the arc blown, and cooling vapors generated, followed by collection thereof can improve the production efficiency of ultrafine particles with a uniform particle size.
摘要:
The invention relates to a gas sensor for measuring an air-fuel ratio of an air-fuel mixture of an internal combustion engine and to a method of manufacturing the gas sensor. The sensor of the invention comprises: a solid state electrolyte layer made of an oxygen ion conductive metal oxide; a first electrode of a porous thin film having the catalyst function which was coated on one surface of the solid state electrolyte layer; a second electrode of a porous thin film having the catalyst function which was coated on the other surface of the solid state electrolyte layer; an electrode shielding layer made of a sintered material of ultra fine particulates whose average grain diameter is 1 .mu.m or less which covers the surface other than the region of a predetermined area of the second electrode; and a gas diffusion layer made of a porous electric insulative metal oxide which covers the region of the predetermined area of at least the second electrode.
摘要:
An air/fuel ratio (A/F) sensor for detecting the A/F over a wide range covering a lean region and a rich region which are partitioned by the stoichiometric A/F comprises a solid electrolyte made of an oxygen ion conductive metal oxide, first and second electrodes sandwiching the solid electrolyte and being operable by a predetermined voltage applied thereacross to ionize oxygen near the solid electrolyte and diffuse oxygen ions into the solid electrolyte, and a gas diffusion layer in the form of a porous sintered layer covering the second electrode and made of electrically insulative metal oxide fine particles having a mean particulate size of 1 .mu.m or less so that oxygen or molecules of other gas components in the exhaust gas can move through pores of the gas diffusion layer.
摘要:
The conventional semiconductor element testing equipment is arranged to position each probe accurately and need a burdensome operation for fixing, and includes only a limited number of electrode pads and chips to be tested at a batch. An equipment for testing a semiconductor element is arranged to keep each of electrode pads formed on a semiconductor element to be tested in direct contact with each of probes formed on a first substrate composed of silicon, one of electric connecting substrates disposed in the equipment. On the first substrate, each probe is formed on a cantilever and a wire is routed from a tip of each probe along a tip of the cantilever to the electrode pad formed on an opposite surface to the probe forming surface through an insulating layer.
摘要:
A method of manufacturing a semiconductor device includes forming process of forming a semiconductor element on a semiconductor wafer and testing process of testing electrical performance of the formed semiconductor element. The testing process includes process of electrically connecting a testing apparatus to an electrode pad formed on the semiconductor element to be tested. The testing apparatus has a probe-formed substrate including a plurality of beams having probes to be electrically connected to the electrode pads. The probe-formed substrate has a first beam having at least one probe for electrically connection with the electrode pad and a second beam having a number of probes for electrical connection with the electrode pads of which number is more than the number of the electrode pads electrically connected by said first beam.
摘要:
A structure is provided such that a plural cantilevers are formed on a first board formed of silicon, probes are respectively formed on the individual cantilevers at positions each offset perpendicularly to a longitudinal center line of the cantilever, and wiring connected continuously from each probe to a secondary electrode pad portion through an insulating layer. A structure is alternatively adopted such that by using a both-ends supported beam formed of silicon as the beam, each probe is formed at a position offset toward a supported portion side of the both-ends supported beam.
摘要:
Semiconductor device chips manufacturing and inspecting method is disclosed in which a semiconductor wafer is cut into individual LSI chips. The LSI chips are rearranged and integrated into a predetermined number. The cut LSI chips are integrated in a jig having openings with a size commensurate with the dimensions of the LSI chip. At least one part of the jig having such openings has a coefficient of thermal expansion that is approximately equal to that of the LSI chips. The integrated predetermined number of chips are subjected to an inspection process in a subsequent inspection step thereby improving efficiency and reducing cost.
摘要:
A semiconductor inspection apparatus which is possible to inspect a plurality of semiconductor devices collectively at one time, which has conventionally been difficult because of precision or the like of probes. A method of manufacturing the semiconductor inspection apparatus comprises the steps of forming a cover film on a surface of the silicon substrate and forming a plurality of probes of a polygonal cone shape or a circular cone shape through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a beam or a diaphragm for each probe through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a through hole corresponding to the probe through etching after patterning by photolithography, and after the cover film is removed, forming an insulating film on the surface of the silicon substrate, forming a metal film on a surface of the insulating film, and forming a wiring lead through etching after patterning by photolithography.
摘要:
In an electric characteristic testing process corresponding to a process of the semiconductor apparatus manufacturing processes, in order to test a large area of the electrode pad of the body to be tested in a lump, an electric characteristic testing is performed by pressing a testing structure provided with electrically independent projections having a number equal to a number of conductor portions to be tested formed on an area to be tested of a body to be tested to the body to be tested.