公开(公告)号：US08421940B2

公开(公告)日：2013-04-16

申请号：US12405396

申请日：2009-03-17

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

IPC分类号： G02F1/136

CPC分类号： H01L27/1251 ,  H01L27/1229 ,  H01L27/1285

摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

摘要翻译： 显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件， 其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到 通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

公开(公告)号：US20090230397A1

公开(公告)日：2009-09-17

申请号：US12405396

申请日：2009-03-17

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

IPC分类号： H01L27/12 ,  H01L21/77

CPC分类号： H01L27/1251 ,  H01L27/1229 ,  H01L27/1285

摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

摘要翻译： 显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件， 其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到 通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

公开(公告)号：US20050266594A1

公开(公告)日：2005-12-01

申请号：US11138471

申请日：2005-05-27

申请人： Takuo Kaitoh ,  Takahiro Kamo ,  Hidekazu Miyake ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Takahiro Kamo ,  Hidekazu Miyake ,  Toshihiko Itoga

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50 ,  H05B33/14

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1285

摘要： A manufacturing method for a display device includes: a first thin film transistor that is formed in a first region over a substrate and has a first threshold value according to doping of a first impurity into a semiconductor layer in a channel region; and a second thin film transistor that is formed in a second region over the substrate and has a second threshold value, which is different from the first threshold value, according to doping of a second impurity into a semiconductor layer in a channel region, wherein a crystallized semiconductor layer, which is used in the channel region of the second thin film transistor, is obtained by subjecting a semiconductor layer in the second region to fusing treatment in a state in which the second impurity is applied over the semiconductor layer.

摘要翻译： 一种显示装置的制造方法，包括：第一薄膜晶体管，其形成在衬底上的第一区域中，并且具有根据第一杂质掺杂到沟道区域中的半导体层中的第一阈值; 以及第二薄膜晶体管，其形成在所述衬底上的第二区域中，并且具有根据第二杂质掺杂到沟道区域中的半导体层中的与所述第一阈值不同的第二阈值，其中， 在第二薄膜晶体管的沟道区域中使用的结晶半导体层通过在第二区域中的半导体层在半导体层上施加第二杂质的状态下进行熔合处理来获得。

公开(公告)号：US08670082B2

公开(公告)日：2014-03-11

申请号：US13242283

申请日：2011-09-23

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

IPC分类号： G02F1/136 ,  H01L29/04

CPC分类号： H01L29/66765 ,  G02F1/136209 ,  H01L29/78633

摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

摘要翻译： 提供薄膜晶体管，显示装置和液晶显示装置。 薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为 与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠 照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

公开(公告)号：US07777230B2

公开(公告)日：2010-08-17

申请号：US12155788

申请日：2008-06-10

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

IPC分类号： H01L27/14

CPC分类号： H01L27/124 ,  G02F1/1368

摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.

摘要翻译： 本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。 在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极 与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧 如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

公开(公告)号：US20120080683A1

公开(公告)日：2012-04-05

申请号：US13242283

申请日：2011-09-23

申请人： Takeshi NODA ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

发明人： Takeshi NODA ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

IPC分类号： H01L27/15 ,  H01L29/786

CPC分类号： H01L29/66765 ,  G02F1/136209 ,  H01L29/78633

摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

摘要翻译： 提供薄膜晶体管，显示装置和液晶显示装置。 薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为 与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠 照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

公开(公告)号：US20080308811A1

公开(公告)日：2008-12-18

申请号：US12155788

申请日：2008-06-10

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

IPC分类号： H01L33/00

CPC分类号： H01L27/124 ,  G02F1/1368

摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.

摘要翻译： 本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。 在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极 与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧 如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

公开(公告)号：US08049255B2

公开(公告)日：2011-11-01

申请号：US12155504

申请日：2008-06-05

申请人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L31/062

CPC分类号： H01L27/1214 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.

摘要翻译： 半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。 半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。 源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。 每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

公开(公告)号：US20110221985A1

公开(公告)日：2011-09-15

申请号：US13042490

申请日：2011-03-08

申请人： Terunori SAITOU ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

发明人： Terunori SAITOU ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

IPC分类号： G02F1/133 ,  H01J9/20

CPC分类号： G02F1/13458 ,  G02F1/1333 ,  G02F1/136204 ,  G02F2001/133388 ,  G02F2202/103 ,  G02F2202/22

摘要： In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.

摘要翻译： 为了以低成本减小面积的静电来防止TFT或层间绝缘膜的电介质击穿，液晶显示装置具有在显示区域中形成层间绝缘膜和a-Si膜的构造 和端子内部的控制区域。 图像信号线和扫描线通过其交叉点中的层间绝缘膜和a-Si膜彼此绝缘。 另一方面，在静电保护线与端子外的接地线之间仅形成层间绝缘膜。 当感应到静电时，导致端子外部的区域发生介电击穿。 因此，显示区域和控制区域被保护免受静电。

公开(公告)号：US07994505B2

公开(公告)日：2011-08-09

申请号：US12534904

申请日：2009-08-04

申请人： Terunori Saitou ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Terunori Saitou ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L33/00

CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/04

摘要： A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.

摘要翻译： 液晶显示装置包括由多晶硅层和a-Si层形成的半导体层，并形成在栅电极之上，栅极绝缘膜插入其间。 源电极或漏电极形成在半导体层的上方。 在源极或漏电极与半导体层之间形成n + Si层。 由于源电极或漏电极的端部形成在半导体层的内侧端部，所以能够减小半导体层的端部处的漏电流。