-
1.发明申请MASK DEFECT MEASUREMENT METHOD, MASK QUALITY DETERMINATION METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权掩模缺陷测量方法，掩模质量测定方法和半导体器件的制造方法公开(公告)号：US20110043811A1
公开(公告)日：2011-02-24
申请号：US12750396
申请日：2010-03-30
CPC分类号： G01N21/956 , G01N2021/8874 , G01N2021/95676 , G03F1/84
摘要： A method for measuring a shape of a phase defect existing on an exposure mask includes making inspection light incident on the mask, measuring the intensity of light scattered in an angular range in which the width of an scattering area on the phase defect can be predicted, calculating a radius of the phase defect based on the measured scattered light intensity, changing the angular range of scattered light to be measured, remeasuring scattered light intensity in the thus changed angular range, and calculating a scattering cross-sectional area based on the scattered light intensity obtained by remeasurement. A process of remeasuring the scattered light intensity and calculating the scattering cross-sectional area is repeatedly performed until the remeasured scattered light intensity is saturated and the shape of the phase defect is determined by using the calculated radius of the phase defect and each of the calculated scattering cross-sectional areas.
摘要翻译： 用于测量存在于曝光掩模上的相位缺陷的形状的方法包括：使检测光入射到掩模上，测量在可预测相位缺陷上的散射面积的宽度的角度范围内散射的光的强度， 基于所测量的散射光强度，改变要测量的散射光的角度范围来计算相位缺陷的半径，在如此改变的角度范围内重新测量散射光强度，以及基于散射光计算散射截面积 通过重新测量获得的强度。 重新进行重新测量散射光强度并计算散射横截面积的过程，直到重新测量的散射光强度饱和，并且通过使用计算出的相位缺陷的半径来确定相位缺陷的形状， 散射横截面积。
-
2.发明授权Mask defect measurement method, mask quality determination and method, and manufacturing method of semiconductor device 有权掩模缺陷测量方法，掩模质量测定和方法以及半导体器件的制造方法公开(公告)号：US08384888B2
公开(公告)日：2013-02-26
申请号：US12750396
申请日：2010-03-30
IPC分类号： G01N21/00
CPC分类号： G01N21/956 , G01N2021/8874 , G01N2021/95676 , G03F1/84
摘要： A method for measuring a shape of a phase defect existing on an exposure mask includes making inspection light incident on the mask, measuring the intensity of light scattered in an angular range in which the width of an scattering area on the phase defect can be predicted, calculating a radius of the phase defect based on the measured scattered light intensity, changing the angular range of scattered light to be measured, remeasuring scattered light intensity in the thus changed angular range, and calculating a scattering cross-sectional area based on the scattered light intensity obtained by remeasurement. A process of remeasuring the scattered light intensity and calculating the scattering cross-sectional area is repeatedly performed until the remeasured scattered light intensity is saturated and the shape of the phase defect is determined by using the calculated radius of the phase defect and each of the calculated scattering cross-sectional areas.
摘要翻译： 用于测量存在于曝光掩模上的相位缺陷的形状的方法包括：使检测光入射到掩模上，测量在可预测相位缺陷上的散射面积的宽度的角度范围内散射的光的强度， 基于所测量的散射光强度，改变要测量的散射光的角度范围来计算相位缺陷的半径，在如此改变的角度范围内重新测量散射光强度，以及基于散射光计算散射截面积 通过重新测量获得的强度。 重新进行重新测量散射光强度和计算散射截面面积的过程，直到重新测量的散射光强度饱和，并且通过使用计算出的相缺陷的半径来确定相缺陷的形状， 散射横截面积。
-
3.发明授权公开(公告)号：US08435702B2
公开(公告)日：2013-05-07
申请号：US12563265
申请日：2009-09-21
申请人： Tsuneo Terasawa , Takeshi Yamane
发明人： Tsuneo Terasawa , Takeshi Yamane
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , Y10T403/13
摘要： Provided is a technique capable of improving the dimensional accuracy of a transfer pattern in a lithography technique in which EUV light is used and the EUV light is incident obliquely on a mask and an image of the EUV light reflected from the mask is formed on a semiconductor substrate (resist film), thereby transferring the pattern formed on the mask onto the semiconductor substrate. The present invention is based on a lithography technique in which EUV light is used and an exposure optical system in which the EUV light is obliquely incident on a mask is used. In this lithography technique, an absorber and a difference in level are formed on the mask, and a projective component projected on a mask surface out of a direction cosine component of the incident light is set to be almost orthogonal to an extending direction of the difference in level.
摘要翻译： 提供了一种技术，其能够提高使用EUV光的光刻技术中的转印图案的尺寸精度，并且EUV光倾斜地入射到掩模上，并且在半导体上形成从掩模反射的EUV光的图像 衬底（抗蚀剂膜），从而将形成在掩模上的图案转印到半导体衬底上。 本发明基于使用EUV光的光刻技术和其中EUV光倾斜入射在掩模上的曝光光学系统。 在该光刻技术中，在掩模上形成吸收体和水平差，并且投射到入射光的方向余弦分量的掩模表面上的投射分量被设定为与差异的延伸方向几乎正交 在水平。
-
公开(公告)号：US20120224051A1
公开(公告)日：2012-09-06
申请号：US13409846
申请日：2012-03-01
申请人： Takeshi YAMANE , Tsuneo Terasawa
发明人： Takeshi YAMANE , Tsuneo Terasawa
IPC分类号： H04N7/18
摘要： According to one embodiment, a method of inspecting a defect of a semiconductor exposure mask by using an optical system, which is configured to acquire an image by an imaging module by making light of an arbitrary wavelength incident on the semiconductor exposure mask, includes acquiring a control condition for elongating a point image acquired by the optical system in a read-out direction of the imaging module, acquiring an image of a desired area of the mask under the control condition, and determining, when a peak signal with a signal intensity which is a first threshold or more.
摘要翻译： 根据一个实施例，通过使用被配置为通过使入射在半导体曝光掩模上的任意波长的光获取成像模块的图像的光学系统来检查半导体曝光掩模的缺陷的方法包括： 控制条件，用于在所述摄像模块的读出方向上延伸由所述光学系统获取的点图像，在所述控制条件下获取所述掩模的期望区域的图像，以及当将具有信号强度的峰值信号 是第一个门槛以上。
-
公开(公告)号：US20120218543A1
公开(公告)日：2012-08-30
申请号：US13403105
申请日：2012-02-23
申请人： Takeshi YAMANE , Tsuneo Terasawa
发明人： Takeshi YAMANE , Tsuneo Terasawa
CPC分类号： G01N21/956 , G01N2021/8822 , G01N2021/95676
摘要： According to one embodiment, a method of detecting a defect of a semiconductor exposure mask includes acquiring a background intensity from a surface height distribution of the mask, acquiring a standard background intensity distribution from the background intensity, making light of an arbitrary wavelength incident on the mask, and acquiring an image at a position of interest of the mask, acquiring background intensity raw data, based on a signal intensity of the acquired image at the position of interest and a mean value of image intensity data in a peripheral area of the position of interest, finding a correction coefficient of the signal intensity, based on a ratio of the background intensity raw data to the standard background intensity distribution, correcting the signal intensity by multiplying the signal intensity.
摘要翻译： 根据一个实施例，一种检测半导体曝光掩模的缺陷的方法包括从掩模的表面高度分布获取背景强度，从背景强度获取标准背景强度分布，使入射到 掩模，并且获取所述掩模的感兴趣位置处的图像，基于感兴趣位置处获取的图像的信号强度和所述位置的周边区域中的图像强度数据的平均值来获取背景强度原始数据 根据背景强度原始数据与标准背景强度分布的比率，求出信号强度的校正系数，通过乘以信号强度来校正信号强度。
-
公开(公告)号：US20120063667A1
公开(公告)日：2012-03-15
申请号：US13230030
申请日：2011-09-12
申请人： Takeshi YAMANE , Tsuneo Terasawa
发明人： Takeshi YAMANE , Tsuneo Terasawa
IPC分类号： G06K9/00
CPC分类号： G01N21/956 , G01N2021/95676
摘要： According to one embodiment, in a method for inspecting a defect of an exposure mask, using an optical system which acquires a dark-field image, an arbitrary partial region where a uniform dark-field image is obtained on the mask is allocated at a defocus position to acquire an image. A detection threshold is decided using signal intensities of the acquired image and an area ratio between a desired inspection region and the partial region, so that a signal count indicating signal intensities greater than the detection threshold in the inspection region is less than a target false detection count. The mask is allocated in a just-in-focus position to acquire an image of the inspection region. A signal having a signal intensity of the acquired image, which indicates an intensity greater than the detection threshold, is determined as a defect.
摘要翻译： 根据一个实施例，在用于检查曝光掩模的缺陷的方法中，使用获取暗视场图像的光学系统，在掩模上获得均匀的暗场图像的任意部分区域被分配在散焦 获取图像的位置。 使用所获取的图像的信号强度和期望检查区域和部分区域之间的面积比来确定检测阈值，使得指示在检查区域中大于检测阈值的信号强度的信号计数小于目标错误检测 计数。 掩模被分配在刚刚聚焦位置以获取检查区域的图像。 具有指示强度大于检测阈值的获取图像的信号强度的信号被确定为缺陷。
-
公开(公告)号：US08797524B2
公开(公告)日：2014-08-05
申请号：US13403105
申请日：2012-02-23
申请人： Takeshi Yamane , Tsuneo Terasawa
发明人： Takeshi Yamane , Tsuneo Terasawa
IPC分类号： G01N21/00 , G01J3/00 , G01N21/956
CPC分类号： G01N21/956 , G01N2021/8822 , G01N2021/95676
摘要： According to one embodiment, a method of detecting a defect of a semiconductor exposure mask includes acquiring a background intensity from a surface height distribution of the mask, acquiring a standard background intensity distribution from the background intensity, making light of an arbitrary wavelength incident on the mask, and acquiring an image at a position of interest of the mask, acquiring background intensity raw data, based on a signal intensity of the acquired image at the position of interest and a mean value of image intensity data in a peripheral area of the position of interest, finding a correction coefficient of the signal intensity, based on a ratio of the background intensity raw data to the standard background intensity distribution, correcting the signal intensity by multiplying the signal intensity.
摘要翻译： 根据一个实施例，一种检测半导体曝光掩模的缺陷的方法包括从掩模的表面高度分布获取背景强度，从背景强度获取标准背景强度分布，使入射到 掩模，并且获取所述掩模的感兴趣位置处的图像，基于感兴趣位置处获取的图像的信号强度和所述位置的周边区域中的图像强度数据的平均值来获取背景强度原始数据 根据背景强度原始数据与标准背景强度分布的比率，求出信号强度的校正系数，通过乘以信号强度来校正信号强度。
-
公开(公告)号：US08699783B2
公开(公告)日：2014-04-15
申请号：US13230030
申请日：2011-09-12
申请人： Takeshi Yamane , Tsuneo Terasawa
发明人： Takeshi Yamane , Tsuneo Terasawa
IPC分类号： G06K9/00
CPC分类号： G01N21/956 , G01N2021/95676
摘要： According to one embodiment, in a method for inspecting a defect of an exposure mask, using an optical system which acquires a dark-field image, an arbitrary partial region where a uniform dark-field image is obtained on the mask is allocated at a defocus position to acquire an image. A detection threshold is decided using signal intensities of the acquired image and an area ratio between a desired inspection region and the partial region, so that a signal count indicating signal intensities greater than the detection threshold in the inspection region is less than a target false detection count. The mask is allocated in a just-in-focus position to acquire an image of the inspection region. A signal having a signal intensity of the acquired image, which indicates an intensity greater than the detection threshold, is determined as a defect.
摘要翻译： 根据一个实施例，在用于检查曝光掩模的缺陷的方法中，使用获取暗视场图像的光学系统，在掩模上获得均匀的暗场图像的任意部分区域被分配在散焦 获取图像的位置。 使用所获取的图像的信号强度和期望检查区域和部分区域之间的面积比来确定检测阈值，使得指示在检查区域中大于检测阈值的信号强度的信号计数小于目标错误检测 计数。 掩模被分配在刚刚聚焦位置以获取检查区域的图像。 具有指示强度大于检测阈值的获取图像的信号强度的信号被确定为缺陷。
-
9.发明授权Method of fabricating a semiconductor integrated circuit that includes patterning a semiconductor substrate with a first photomask that uses metal for blocking light and patterning the same substrate with a second photomask that uses organic resin for blocking light 有权一种半导体集成电路的制造方法，其包括使用第一光掩模图案化半导体衬底，所述第一光掩模使用金属来阻挡光，并且利用使用有机树脂阻挡光的第二光掩模对相同衬底进行图案化公开(公告)号：US07361530B2
公开(公告)日：2008-04-22
申请号：US11714837
申请日：2007-03-07
IPC分类号： H01L21/58
CPC分类号： G03F7/70425 , G03F1/00 , G03F1/56 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05569 , H01L2224/05572 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/15311 , Y10S438/944 , Y10S438/946 , H01L2924/00
摘要： Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.
摘要翻译： 提高了半导体集成电路器件的生产率。 根据使用光掩模的次数，适当地使用具有由金属制成的不透明图案的光掩模和由抗蚀剂膜制成的不透明图案的光掩模，从而进行曝光处理。
-
10.发明授权METHOD OF FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF PRODUCING A MULTI-CHIP MODULE THAT INCLUDES PATTERNING WITH A PHOTOMASK THAT USES METAL FOR BLOCKING EXPOSURE LIGHT AND A PHOTOMASK THAT USES ORGANIC RESIN FOR BLOCKING EXPOSURE LIGHT 失效制造半导体集成电路装置的方法以及制造多芯片模块的方法，其包括使用用于阻挡接触光的金属的光电图案，以及使用有机树脂阻挡接触光的照相机公开(公告)号：US06849540B2
公开(公告)日：2005-02-01
申请号：US10296495
申请日：2001-08-15
IPC分类号： G03F1/54 , G03F1/56 , G03F7/20 , H01L21/768 , H01L21/027
CPC分类号： G03F7/70425 , G03F1/00 , G03F1/56 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05569 , H01L2224/05572 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/15311 , Y10S438/944 , Y10S438/946 , H01L2924/00
摘要： Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.
摘要翻译： 提高了半导体集成电路器件的生产率。 根据使用光掩模的次数，适当地使用具有由金属制成的不透明图案的光掩模和由抗蚀剂膜制成的不透明图案的光掩模，从而进行曝光处理。
-
-
-
-
-
-
-
-
-
搜索结果
68 条记录 (耗时 0.027 秒)
