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公开(公告)号：US07034337B2
公开(公告)日：2006-04-25
申请号：US10792132
申请日：2004-03-04
申请人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
发明人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78666 , H01L29/78684 , H01L2029/7863
摘要： The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided.In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the {101} plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction. This semiconductor film is obtained by forming an amorphous semiconductor film containing silicon and germanium as its ingredient through plasma CVD in which hydride, fluoride, or chloride gas of a silicon atom is used, the repetition frequency is set to 10 kHz or less, and the duty ratio is set to 50% or less for intermittent electric discharge or pulsed electric discharge, and introducing an element for promoting crystallization of the amorphous semiconductor film to the surface thereof to crystallize the amorphous semiconductor film while utilizing the introduced element.
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公开(公告)号：US20060246638A1
公开(公告)日：2006-11-02
申请号：US11380147
申请日：2006-04-25
申请人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
发明人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
IPC分类号： H01L21/84
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78666 , H01L29/78684 , H01L2029/7863
摘要： The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided. In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the {101} plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction. This semiconductor film is obtained by forming an amorphous semiconductor film containing silicon and germanium as its ingredient through plasma CVD in which hydride, fluoride, or chloride gas of a silicon atom is used, the repetition frequency is set to 10 kHz or less, and the duty ratio is set to 50% or less for intermittent electric discharge or pulsed electric discharge, and introducing an element for promoting crystallization of the amorphous semiconductor film to the surface thereof to crystallize the amorphous semiconductor film while utilizing the introduced element.
摘要翻译： 通过热处理使激光，紫外线或红外线等强光照射而使非晶半导体膜结晶而得到的结晶半导体膜的取向比提高，并且有源区由结晶半导体形成 膜和制造半导体器件的方法。 在含有硅和锗作为其成分且具有晶体结构的半导体膜中，{101}面达到通过电子反向散射衍射检测的所有晶格面的30％以上。 该半导体膜通过使用其中使用硅原子的氢化物，氟化物或氯化物气体，重复频率设定为10kHz以下的等离子体CVD形成含有硅和锗作为其成分的非晶半导体膜， 对于间歇放电或脉冲放电，占空比被设定为50％以下，并且在其表面引入促进非晶半导体膜的结晶化的元素，从而使非晶半导体膜在利用引入元素的同时结晶。
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公开(公告)号：US07368335B2
公开(公告)日：2008-05-06
申请号：US11380147
申请日：2006-04-25
申请人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
发明人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
IPC分类号： H01L21/84
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78666 , H01L29/78684 , H01L2029/7863
摘要： The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided. In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the {101} plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction. This semiconductor film is obtained by forming an amorphous semiconductor film containing silicon and germanium as its ingredient through plasma CVD in which hydride, fluoride, or chloride gas of a silicon atom is used, the repetition frequency is set to 10 kHz or less, and the duty ratio is set to 50% or less for intermittent electric discharge or pulsed electric discharge, and introducing an element for promoting crystallization of the amorphous semiconductor film to the surface thereof to crystallize the amorphous semiconductor film while utilizing the introduced element.
摘要翻译： 通过热处理使激光，紫外线或红外线等强光照射而使非晶半导体膜结晶而得到的结晶半导体膜的取向比提高，并且有源区由结晶半导体形成 膜和制造半导体器件的方法。 在含有硅和锗作为其成分且具有晶体结构的半导体膜中，{101}面达到通过电子反向散射衍射检测的所有晶格面的30％以上。 该半导体膜通过使用其中使用硅原子的氢化物，氟化物或氯化物气体，重复频率设定为10kHz以下的等离子体CVD形成含有硅和锗作为其成分的非晶半导体膜， 对于间歇放电或脉冲放电，占空比被设定为50％以下，并且在其表面引入促进非晶半导体膜的结晶化的元素，从而使非晶半导体膜在利用引入元素的同时结晶。
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公开(公告)号：US06703265B2
公开(公告)日：2004-03-09
申请号：US09918547
申请日：2001-08-01
申请人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
发明人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
IPC分类号： H01L2100
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78666 , H01L29/78684 , H01L2029/7863
摘要： The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided. In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the {101} plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction. This semiconductor film is obtained by forming an amorphous semiconductor film containing silicon and germanium as its ingredient through plasma CVD in which hydride, fluoride, or chloride gas of a silicon atom is used, the repetition frequency is set to 10 kHz or less, and the duty ratio is set to 50% or less for intermittent electric discharge or pulsed electric discharge, and introducing an element for promoting crystallization of the amorphous semiconductor film to the surface thereof to crystallize the amorphous semiconductor film while utilizing the introduced element.
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公开(公告)号：US20070254416A1
公开(公告)日：2007-11-01
申请号：US11785291
申请日：2007-04-17
IPC分类号： H01L21/336
CPC分类号： H01L27/127 , H01L21/32136 , H01L21/67207 , H01L27/12 , H01L27/1214 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L2029/7863
摘要： The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
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公开(公告)号：US07220613B2
公开(公告)日：2007-05-22
申请号：US10928271
申请日：2004-08-30
IPC分类号： H01L33/00
CPC分类号： H01L27/127 , H01L21/32136 , H01L21/67207 , H01L27/12 , H01L27/1214 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L2029/7863
摘要： The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
摘要翻译： 提供本发明是为了消除由于形成TFT的每个膜的界面的污染物杂质引起的污染，这是降低TFT的可靠性的主要因素。 通过连接洗涤室和成膜室，可以在从洗涤步骤到成膜步骤的时间内不将TFT暴露于空气中进行成膜，并且可以保持形成的每个膜的界面的清洁度 TFT。
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公开(公告)号：US08138101B2
公开(公告)日：2012-03-20
申请号：US11785291
申请日：2007-04-17
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L27/127 , H01L21/32136 , H01L21/67207 , H01L27/12 , H01L27/1214 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L2029/7863
摘要： The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
摘要翻译： 提供本发明是为了消除由于形成TFT的每个膜的界面的污染物杂质引起的污染，这是降低TFT的可靠性的主要因素。 通过连接洗涤室和成膜室，可以在从洗涤步骤到成膜步骤的时间内不将TFT暴露于空气中进行成膜，并且可以保持形成的每个膜的界面的清洁度 TFT。
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8.发明授权公开(公告)号：US08951902B2
公开(公告)日：2015-02-10
申请号：US13362049
申请日：2012-01-31
IPC分类号： H01L21/3205 , H01L21/4763 , H01L29/786 , H01L21/3213 , H01L27/12 , H01L29/423 , H01L29/49 , H01L21/67
CPC分类号： H01L27/127 , H01L21/32136 , H01L21/67207 , H01L27/12 , H01L27/1214 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L2029/7863
摘要： The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
摘要翻译： 提供本发明是为了消除由于形成TFT的每个膜的界面的污染物杂质引起的污染，这是降低TFT的可靠性的主要因素。 通过连接洗涤室和成膜室，可以在从洗涤步骤到成膜步骤的时间内不将TFT暴露于空气中进行成膜，并且可以保持形成的每个膜的界面的清洁度 TFT。
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公开(公告)号：US06794229B2
公开(公告)日：2004-09-21
申请号：US09842315
申请日：2001-04-26
IPC分类号： H01L2100
CPC分类号： H01L27/127 , H01L21/32136 , H01L21/67207 , H01L27/12 , H01L27/1214 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L2029/7863
摘要： The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
摘要翻译： 提供本发明是为了消除由于形成TFT的每个膜的界面的污染物杂质引起的污染，这是降低TFT的可靠性的主要因素。 通过连接洗涤室和成膜室，可以在从洗涤步骤到成膜步骤的时间内不将TFT暴露于空气中进行成膜，并且可以保持形成的每个膜的界面的清洁度 TFT。
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公开(公告)号：US20050026320A1
公开(公告)日：2005-02-03
申请号：US10928271
申请日：2004-08-30
IPC分类号： H01L21/3213 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L21/00
CPC分类号： H01L27/127 , H01L21/32136 , H01L21/67207 , H01L27/12 , H01L27/1214 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L2029/7863
摘要： The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
摘要翻译： 提供本发明是为了消除由于形成TFT的每个膜的界面的污染物杂质引起的污染，这是降低TFT的可靠性的主要因素。 通过连接洗涤室和成膜室，可以在从洗涤步骤到成膜步骤的时间内不将TFT暴露于空气中进行成膜，并且可以保持形成的每个膜的界面的清洁度 TFT。
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