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    Reflective mask blank and method of manufacturing a reflective mask
    3.
    发明授权
    Reflective mask blank and method of manufacturing a reflective mask 有权
    反光罩罩和反光罩的制造方法

    公开(公告)号：US08546047B2

    公开(公告)日：2013-10-01

    申请号：US13122099

    申请日：2009-12-24

    申请人： Morio Hosoya

    发明人： Morio Hosoya

    IPC分类号： G03F1/22

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/0092 ,  G03F1/22 ,  G03F7/2002

    摘要： Provided are a reflective mask blank and a reflective mask which are capable of improving the contrast for inspection light having a wavelength of 200 nm or less in an inspection, capable of improving the contrast for exposure light in use of the mask, and capable of forming a high-resolution fine pattern. A reflective mask blank 10 includes a substrate 1, and a multilayer reflective film 2 adapted to reflect exposure light, a protective film 6 composed mainly of ruthenium (Ru) or its compound on the multilayer reflective film 2, and an absorber film 4 adapted to absorb the exposure light, which are formed in this order on the substrate. The absorber film 4 has a laminated structure including an uppermost layer 4b and a lower layer 4a. The uppermost layer 4b is formed of a material composed mainly of a nitride, an oxide, an oxynitride, a carbide, a carbonitride, or an oxycarbonitride of at least one or more elements selected from Si and Cr. A reflective mask 20 is obtained by forming a transfer pattern in the absorber film of the reflective mask blank.

    摘要翻译： 提供了能够提高检查中具有200nm以下的波长的检查光的对比度的反射性掩模坯料和反射性掩模，能够改善使用掩模时的曝光光的对比度，并能够形成 高分辨率精细图案。 反射掩模板10包括基板1和适于反射曝光的多层反射膜2，主要由钌（Ru）或其化合物组成的保护膜6在多层反射膜2上，以及吸收膜4， 吸收在基板上依次形成的曝光光。 吸收膜4具有包括最上层4b和下层4a的叠层结构。 最上层4b由主要由选自Si和Cr中的至少一种元素的氮化物，氧化物，氮氧化物，碳化物，碳氮化物或碳氮氧化物组成的材料形成。 通过在反射掩模板的吸收膜中形成转印图案来获得反射掩模20。

    Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
    5.
    发明申请
    Reflective mask blank, reflective mask, and method for manufacturing semiconductor device 审中-公开
    反射掩模板，反射掩模和半导体器件的制造方法

    公开(公告)号：US20060270226A1

    公开(公告)日：2006-11-30

    申请号：US11439145

    申请日：2006-05-24

    申请人： Morio Hosoya

    发明人： Morio Hosoya

    IPC分类号： G03F1/00 ,  H01L21/44 ,  H01L23/48

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/062 ,  G21K2201/067

    摘要： A reflective mask blank comprises a multilayer reflective film for reflecting exposure light and formed on a substrate, a protective film for protecting the multilayer reflective film and formed above the multilayer reflective film, an absorber film for absorbing the exposure light and formed on the protective film, and a thermal diffusion-preventing film formed between the multilayer reflective film and the protective film. The protective film is made of ruthenium or a ruthenium compound containing ruthenium and at least one selected from the group consisting of molybdenum, niobium, zirconium, yttrium, boron, titanium, and lanthanum. The thermal diffusion-preventing film is made of a material having a refractive index of greater than 0.90 and an extinction coefficient of less than −0.020. A reflective mask comprises the reflective mask blank wherein the absorber film is formed with a pattern to be transferred to a transfer body.

    摘要翻译： 反射掩模坯料包括用于反射曝光光并形成在基板上的多层反射膜，用于保护多层反射膜并形成在多层反射膜上方的保护膜，用于吸收曝光光并形成在保护膜上的吸收膜 ，以及形成在多层反射膜和保护膜之间的热扩散防止膜。 保护膜由钌或含有钌的钌化合物和选自钼，铌，锆，钇，硼，钛和镧中的至少一种制成。 防热膜由折射率大于0.90，消光系数小于-0.020的材料制成。 反射掩模包括反射掩模坯料，其中吸收膜形成有转印到转印体的图案。

    REFLECTIVE MASK BLANK AND METHOD OF MANUFACTURING A REFLECTIVE MASK
    6.
    发明申请
    REFLECTIVE MASK BLANK AND METHOD OF MANUFACTURING A REFLECTIVE MASK 有权
    反射面罩和制造反射面膜的方法

    公开(公告)号：US20110281207A1

    公开(公告)日：2011-11-17

    申请号：US13122024

    申请日：2010-01-29

    申请人： Morio Hosoya

    发明人： Morio Hosoya

    IPC分类号： G03F1/14

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/54

    摘要： Disclosed is a reflective mask blank (10) which comprises a substrate (1), a multilayer reflective film (2) for reflecting exposure light, a buffer film (3), and an absorber film (4) for absorbing exposure light, said films being sequentially formed on the substrate. The absorber film (4) has a multilayer structure which is composed of an uppermost layer (4b) and a lower layer (4a). The uppermost layer is formed from a material containing oxide, oxynitride or carbide of Ta, and has a refractive index (n) of 0.95-0.97 and an extinction coefficient (k) of from −0.033 to −0.023. The lower layer is formed from a material containing Ta, and has a refractive index (n) of 0.94-0.97 and an extinction coefficient (k) of from −0.050 to −0.036. A reflective mask (20) can be obtained by forming a transfer pattern on the absorber film of the reflective mask blank.

    摘要翻译： 公开了一种反射掩模板（10），其包括基板（1），用于反射曝光光的多层反射膜（2），缓冲膜（3）和用于吸收曝光光的吸收膜（4），所述膜 顺序形成在基板上。 吸收膜（4）具有由最上层（4b）和下层（4a）构成的多层结构体。 最上层由含有氧化物，氧氮化物或Ta的碳化物的材料形成，折射率（n）为0.95〜0.97，消光系数（k）为-0.033〜-0.23。 下层由含Ta的材料形成，折射率（n）为0.94-0.97，消光系数（k）为-0.050〜-0.036。 可以通过在反射掩模板的吸收膜上形成转印图案来获得反射掩模（20）。

    Reflective mask blank, reflective mask, and method of manufacturing semiconductor device
    8.
    发明授权
    Reflective mask blank, reflective mask, and method of manufacturing semiconductor device 有权
    反光掩模板，反射掩模和半导体器件的制造方法

    公开(公告)号：US07700245B2

    公开(公告)日：2010-04-20

    申请号：US11416208

    申请日：2006-05-03

    申请人： Morio Hosoya ,  Tsutomu Shoki

    发明人： Morio Hosoya ,  Tsutomu Shoki

    IPC分类号： G03F1/00 ,  B32B17/10

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/36 ,  C03C17/3615 ,  C03C17/3626 ,  C03C17/3634 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3665 ,  G21K1/062 ,  Y10T428/31616

    摘要： A reflective mask blank and a reflective mask each have, on a multilayer reflective film, a protective film that protects the multilayer reflective film from etching during pattern formation of an absorber layer or a buffer layer formed on the protective film. The protective film is formed by a ruthenium compound containing ruthenium (Ru) and at least one selected from the group consisting of molybdenum (Mo), niobium (Nb), zirconium (Zr), yttrium (Y), boron (B), titanium (Ti), and lanthanum (La). A reflection enhancement film of Ru may be further formed on the surface of the protective film.

    摘要翻译： 反射掩模坯料和反射掩模在多层反射膜上具有保护膜，该保护膜在形成在保护膜上的吸收层或缓冲层的图案形成期间保护多层反射膜免受蚀刻。 保护膜由含有钌（Ru）的钌化合物和选自钼（Mo），铌（Nb），锆（Zr），钇（Y），硼（B），钛 （Ti）和镧（La）。 可以在保护膜的表面上进一步形成Ru的反射增强膜。

    Reflection type mask blank and reflection type mask and production methods for them
    9.
    发明授权
    Reflection type mask blank and reflection type mask and production methods for them 有权
    反射型面罩坯料和反光型面膜及其制作方法

    公开(公告)号：US07390596B2

    公开(公告)日：2008-06-24

    申请号：US10510916

    申请日：2003-04-11

    申请人： Shinichi Ishibashi ,  Tsutomu Shoki ,  Morio Hosoya ,  Yuki Shiota ,  Mitsuhiro Kureishi

    发明人： Shinichi Ishibashi ,  Tsutomu Shoki ,  Morio Hosoya ,  Yuki Shiota ,  Mitsuhiro Kureishi

    IPC分类号： G03F1/00 ,  B32B9/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/58 ,  G03F1/74 ,  Y10T428/31616

    摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.

    摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。