公开(公告)号：US07312561B2

公开(公告)日：2007-12-25

申请号：US11106584

申请日：2005-04-15

申请人： Takuto Moriguchi ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Takuto Moriguchi ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J9/02 ,  H01J1/00

CPC分类号： H01J1/316 ,  H01J9/027 ,  H01J31/127

摘要： An electron-emitting device is equipped with a pair of first electroconductive members arranged on a substrate with an interval between them, wherein the interval becomes narrower at an upper position distant from a surface of the substrate than at a position on the surface, and a peak of one of the pair of the first electroconductive members is higher than a peak of the other of the pair of the first electroconductive members, and further an electron scattering surface forming film including an element having an atomic number larger than those of elements constituting the first electroconductive members as a principal component is provided on a surface of the one of the first electroconductive members.

摘要翻译： 电子发射器件配备有一对第一导电构件，其布置在衬底之间，其间具有间隔，其中在距离衬底表面的上位置处的间隔比在表面上的位置处更窄，并且 一对第一导电构件中的一个的峰值高于一对第一导电构件中的另一个的峰值，并且还包括电子散射表面形成膜，其包含原子序数大于构成 第一导电构件作为主要部件设置在第一导电构件之一的表面上。

公开(公告)号：US07271529B2

公开(公告)日：2007-09-18

申请号：US11097332

申请日：2005-04-04

申请人： Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J19/24

CPC分类号： H01J29/28 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/3165

摘要： An image display apparatus including a rear plate and a face plate disposed opposite to each other, the rear plate being equipped with a plurality of electron-emitting devices, each provided with a pair of electrodes and an electroconductive film including an electron-emitting region disposed between the electrodes, the face plate being equipped with a phosphor for displaying an image and a film exposed on a surface of the phosphor, the film comprising a metal or a metal compound material. A film comprising the same metal or the same metal compound material as the metal or the metal compound material constituting the film exposed on the surface of the phosphor is formed on each of the electroconductive films of the plurality of electron-emitting devices to have a thickness in a range from 0.2 nm to 4.5 nm.

摘要翻译： 一种图像显示装置，包括彼此相对设置的后板和面板，所述后板配备有多个电子发射器件，每个电子发射器件设置有一对电极和包括设置有电子发射区域的导电膜 在所述电极之间，所述面板配备有用于显示图像的荧光体和暴露在所述荧光体的表面上的膜，所述膜包含金属或金属复合材料。 在多个电子发射器件的每个导电膜上形成包含与构成暴露在荧光体表面上的膜的金属或金属化合物材料相同的金属或相同的金属化合物材料的膜，以具有厚度 在0.2nm至4.5nm的范围内。

公开(公告)号：US20050236952A1

公开(公告)日：2005-10-27

申请号：US11106584

申请日：2005-04-15

申请人： Takuto Moriguchi ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Takuto Moriguchi ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J31/12 ,  H01J1/30

CPC分类号： H01J1/316 ,  H01J9/027 ,  H01J31/127

摘要： An electron-emitting device is equipped with a pair of first electroconductive members arranged on a substrate with an interval between them, wherein the interval becomes narrower at an upper position distant from a surface of the substrate than at a position on the surface, and a peak of one of the pair of the first electroconductive members is higher than a peak of the other of the pair of the first electroconductive members, and further an electron scattering surface forming film including an element having an atomic number larger than those of elements constituting the first electroconductive members as a principal component is provided on a surface of the one of the first electroconductive members.

摘要翻译： 电子发射器件配备有一对第一导电构件，其布置在衬底之间，其间具有间隔，其中在距离衬底表面的上位置处的间隔比在表面上的位置处更窄，并且 一对第一导电构件中的一个的峰值高于一对第一导电构件中的另一个的峰值，并且还包括电子散射表面形成膜，其包含原子序数大于构成 第一导电构件作为主要部件设置在第一导电构件之一的表面上。

公开(公告)号：US20050225230A1

公开(公告)日：2005-10-13

申请号：US11097332

申请日：2005-04-04

申请人： Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H01J1/316 ,  H01J17/49 ,  H01J29/28 ,  H01J31/12 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01J29/28 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/3165

摘要： The present invention relates to an improved technique of an image display apparatus and a method for manufacturing the image display apparatus. The image display apparatus of the present invention is composed of a rear plate and a face plate disposed opposite to each other, the rear plate being equipped with a plurality of electron-emitting devices, each provided with a pair of electrodes and an electroconductive film including an electron-emitting region disposed between the electrodes, the face plate being equipped with a phosphor for displaying an image by being irradiated by electrons from the electron-emitting devices and a film exposed on a surface of the phosphor, the film comprising a metal or a metal compound material. The improved respects are that a film comprising the same metal or the same metal compound material as the metal or the metal compound material constituting the film exposed on the surface of the phosphor, the film formed on each of the electroconductive films of the plurality of electron-emitting devices to have a thickness in a range from 0.2 nm to 4.5 nm. Thereby, it is possible to provide an image display apparatus capable of keeping the homogeneity of brightness over a long period.

摘要翻译： 本发明涉及图像显示装置的改进技术和图像显示装置的制造方法。 本发明的图像显示装置由相对设置的后板和面板构成，后板配备有多个电子发射器件，每个电子发射器件设置有一对电极和导电膜，该导电膜包括 设置在所述电极之间的电子发射区域，所述面板配备有用于通过被来自所述电子发射器件的电子照射而显示图像的荧光体和暴露在所述荧光体的表面上的膜，所述膜包括金属或 金属复合材料。 改进的方面是包括与构成暴露在荧光体表面上的膜的金属或金属化合物材料相同的金属或相同的金属化合物材料的膜，在多个电子的每个导电膜上形成的膜 - 设备具有在0.2nm至4.5nm范围内的厚度。 由此，能够提供能够长时间保持亮度均匀性的图像显示装置。

公开(公告)号：US08022608B2

公开(公告)日：2011-09-20

申请号：US12481851

申请日：2009-06-10

申请人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H01J1/88 ,  H01J1/30

CPC分类号： H01J1/316

摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

摘要翻译： 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US20090244398A1

公开(公告)日：2009-10-01

申请号：US12481851

申请日：2009-06-10

申请人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H04N5/44 ,  H01J1/02 ,  H04N5/66

CPC分类号： H01J1/316

摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

摘要翻译： 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US20050258734A1

公开(公告)日：2005-11-24

申请号：US11131195

申请日：2005-05-18

申请人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H01J1/30 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12

CPC分类号： H01J1/316

摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

摘要翻译： 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US20100159790A1

公开(公告)日：2010-06-24

申请号：US12421758

申请日：2009-04-10

申请人： Kenichi Iwata ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Shin Kitamura

发明人： Kenichi Iwata ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Shin Kitamura

IPC分类号： H01J9/04

CPC分类号： H01J31/127 ,  H01J1/3046 ,  H01J29/04 ,  H01J2201/30423 ,  H01J2329/0423

摘要： A method of manufacturing an electron-emitting device includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film. At the first step, the conductive film is formed so that film density of a portion on the side surface of the insulating layer becomes lower than film density of a portion on the corner portion of the insulating layer.

摘要翻译： 制造电子发射器件的方法包括：第一步骤，在具有上表面和侧表面的绝缘层上形成导电膜，所述绝缘层经由拐角部分从所述侧表面延伸到所述上表面 表面并覆盖角部的至少一部分，以及蚀刻导电膜的第二步骤。 在第一步骤中，形成导电膜，使得绝缘层的侧表面上的部分的膜密度变得低于绝缘层的角部上的部分的膜密度。

公开(公告)号：US07850502B2

公开(公告)日：2010-12-14

申请号：US12421780

申请日：2009-04-10

申请人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

发明人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

IPC分类号： H01J9/00

CPC分类号： H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.

摘要翻译： 一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。 在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

公开(公告)号：US20100159781A1

公开(公告)日：2010-06-24

申请号：US12421780

申请日：2009-04-10

申请人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

发明人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

IPC分类号： H01J9/00 ,  H01J9/12

CPC分类号： H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.

摘要翻译： 一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。 在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。