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公开(公告)号：US08349722B2
公开(公告)日：2013-01-08
申请号：US12314036
申请日：2008-12-03
IPC分类号： H01L21/00
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76826 , H01L21/76832 , H01L23/5222 , H01L23/53228 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
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2.发明申请Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device 有权硅碳化硅，碳硅氧烷层的生长方法，半导体器件和半导体器件的制造方法公开(公告)号：US20050287790A1
公开(公告)日：2005-12-29
申请号：US11206955
申请日：2005-08-19
IPC分类号： C23C16/30 , H01L21/316 , H01L21/469 , H01L21/768
CPC分类号： H01L21/02227 , C23C16/30 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76826 , H01L21/76832 , H01L21/76834
摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备具有覆盖铜布线的碳化硅层的下面的结构，并且通过气相沉积作为原料气体四甲基环四硅氧烷，二氧化碳气体和氧气生长碳氢化合物 所述氧气的流量为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，并且分子量大于O 2 O 2的分子量以使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。
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3.发明申请SILICON OXYCARBIDE, GROWTH METHOD OF SILICON OXYCARBIDE LAYER, SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE 审中-公开硅氧化物，硅氧烷层的生长方法，半导体器件和半导体器件的制造方法公开(公告)号：US20120252227A1
公开(公告)日：2012-10-04
申请号：US13493244
申请日：2012-06-11
IPC分类号： H01L21/31
CPC分类号： H01L21/02227 , C23C16/30 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76826 , H01L21/76832 , H01L21/76834
摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备具有覆盖铜布线的碳化硅层的下面的结构，并且通过气相沉积作为原料气体四甲基环四硅氧烷，二氧化碳气体和氧气生长碳氢化合物 所述氧气的流量为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，其分子量大于O 2的分子量，使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。
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4.发明授权Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device 有权硅碳化硅，碳硅氧烷层的生长方法，半导体器件和半导体器件的制造方法公开(公告)号：US07485570B2
公开(公告)日：2009-02-03
申请号：US11206955
申请日：2005-08-19
IPC分类号： H01L21/00
CPC分类号： H01L21/02227 , C23C16/30 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76826 , H01L21/76832 , H01L21/76834
摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备具有覆盖铜布线的碳化硅层的下面的结构，并且通过气相沉积作为原料气体四甲基环四硅氧烷，二氧化碳气体和氧气生长碳氢化合物 所述氧气的流量为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，其分子量大于O 2的分子量，使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。
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公开(公告)号：US20090093130A1
公开(公告)日：2009-04-09
申请号：US12314036
申请日：2008-12-03
IPC分类号： H01L21/31
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76826 , H01L21/76832 , H01L23/5222 , H01L23/53228 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
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6.发明授权Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device 有权硅碳化硅，碳硅氧烷层的生长方法，半导体器件和半导体器件的制造方法公开(公告)号：US06949830B2
公开(公告)日：2005-09-27
申请号：US10694826
申请日：2003-10-29
IPC分类号： C23C16/42 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76826 , H01L21/76832 , H01L23/5222 , H01L23/53228 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
摘要翻译： 一种半导体器件，包括具有覆盖铜布线的碳化硅层的下面的结构，并且通过使用作为源气体四甲基环四硅氧烷，二氧化碳气体和氧气的气相沉积在底层结构上生长碳氧化碳，所述氧气的流速 为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，并且分子量大于O 2 O 2的分子量以使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。
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7.发明授权Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device 有权绝缘膜的形成方法，多层结构的形成方法及半导体装置的制造方法公开(公告)号：US07541296B2
公开(公告)日：2009-06-02
申请号：US11171318
申请日：2005-07-01
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02282 , C23C16/45523 , C23C16/50 , H01L21/02123 , H01L21/0234 , H01L21/316 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L2224/05
摘要： Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k materials in a solvent to form a coating film, subjecting the coating film to a baking treatment under heating for about several minutes at a temperature near a boiling point of the solvent, forming, on the coating film after the baking treatment, an SiC barrier film using a CVD method, and subjecting the coating film to a hydrogen plasma treatment through the barrier film continuously using the same CVD apparatus as used in forming the barrier film without taking out the coating film from the CVD apparatus.
摘要翻译： 公开了一种有效地形成Low-k绝缘膜的方法。 该方法包括以下步骤：在底层上旋转涂覆通过将低k材料分散在溶剂中而形成涂层膜形成的前体溶液，使涂膜在温度下加热约几分钟的烘烤处理 接近溶剂的沸点，在烘烤处理后的涂膜上形成使用CVD法的SiC阻挡膜，并使用与所使用的相同的CVD装置连续地通过阻挡膜对涂膜进行氢等离子体处理 在不从CVD装置中取出涂膜的情况下形成阻挡膜。
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8.发明授权Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device 有权能够提高碳化硅膜等的粘附性的半导体装置的绝缘膜形成方法公开(公告)号：US07208405B2
公开(公告)日：2007-04-24
申请号：US10899045
申请日：2004-07-27
IPC分类号： H01L21/4763 , H01L21/302 , H01L21/461 , H01L21/31
CPC分类号： H01L21/76829 , H01L21/76807 , H01L21/76826 , H01L21/76832 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L24/05 , H01L2224/02166 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.
摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。
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公开(公告)号：US20060178017A1
公开(公告)日：2006-08-10
申请号：US11171318
申请日：2005-07-01
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02282 , C23C16/45523 , C23C16/50 , H01L21/02123 , H01L21/0234 , H01L21/316 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L2224/05
摘要： Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k materials in a solvent to form a coating film, subjecting the coating film to a baking treatment under heating for about several minutes at a temperature near a boiling point of the solvent, forming, on the coating film after the baking treatment, an SiC barrier film using a CVD method, and subjecting the coating film to a hydrogen plasma treatment through the barrier film continuously using the same CVD apparatus as used in forming the barrier film without taking out the coating film from the CVD apparatus.
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10.发明申请Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device 有权能够提高碳化硅膜等的粘附性的半导体装置的绝缘膜形成方法公开(公告)号：US20050242440A1
公开(公告)日：2005-11-03
申请号：US10899045
申请日：2004-07-27
IPC分类号： H01L23/522 , H01L21/314 , H01L21/768 , H01L23/48 , H01L23/532
CPC分类号： H01L21/76829 , H01L21/76807 , H01L21/76826 , H01L21/76832 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L24/05 , H01L2224/02166 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.
摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。
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