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    GaN-BASED COMPOUND SEMICONDUCTOR DEVICE
    2.
    发明申请
    GaN-BASED COMPOUND SEMICONDUCTOR DEVICE 审中-公开
    GaN基化合物半导体器件

    公开(公告)号：US20100109017A1

    公开(公告)日：2010-05-06

    申请号：US12610638

    申请日：2009-11-02

    申请人： Sung-nam LEE ,  Ho-sun PAEK ,  Joong-kon SON ,  Tan SAKONG

    发明人： Sung-nam LEE ,  Ho-sun PAEK ,  Joong-kon SON ,  Tan SAKONG

    IPC分类号： H01L29/20

    CPC分类号： H01L29/2003 ,  B82Y20/00 ,  H01L29/045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0211 ,  H01S5/2231 ,  H01S5/34333

    摘要： A gallium nitride (GaN)-based compound semiconductor device having a structure improving a surface characteristic of a thin film growing on a substrate is provided. The GaN-based compound semiconductor device includes an AlxInyGa1−x−yN substrate (0≦x≦1, 0≦y≦1, and 0≦x+y≦1) whose surface inclines toward a predetermined direction at an off-angle of greater than 0° and less than 1° with respect to the (0001) plane, and a GaN-based compound semiconductor layer grown on the surface of the substrate.

    摘要翻译： 提供了具有提高在基板上生长的薄膜的表面特性的结构的基于氮化镓（GaN）的化合物半导体器件。 GaN基化合物半导体器件包括其表面朝向预定方向倾斜的Al x In y Ga 1-x-y N衬底（0＆amp; nlE; x＆nlE; 1,0＆amp; nE; y＆nlE; 1和0＆lt; nE; x + y＆ 相对于（0001）面大于0°且小于1°，以及在衬底的表面上生长的GaN基化合物半导体层。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    3.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    氮化物半导体发光器件

    公开(公告)号：US20120261687A1

    公开(公告)日：2012-10-18

    申请号：US13441562

    申请日：2012-04-06

    申请人： Hyun Wook SHIM ,  Suk Ho YOON ,  Tan SAKONG ,  Je Won KIM ,  Ki Sung KIM

    发明人： Hyun Wook SHIM ,  Suk Ho YOON ,  Tan SAKONG ,  Je Won KIM ,  Ki Sung KIM

    IPC分类号： H01L33/32

    CPC分类号： H01L33/04 ,  H01L33/32

    摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

    摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。 电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。 三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度 活动层