公开(公告)号：US20120261687A1

公开(公告)日：2012-10-18

申请号：US13441562

申请日：2012-04-06

申请人： Hyun Wook SHIM ,  Suk Ho YOON ,  Tan SAKONG ,  Je Won KIM ,  Ki Sung KIM

发明人： Hyun Wook SHIM ,  Suk Ho YOON ,  Tan SAKONG ,  Je Won KIM ,  Ki Sung KIM

IPC分类号： H01L33/32

CPC分类号： H01L33/04 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。 电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。 三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度 活动层

公开(公告)号：US20150221826A1

公开(公告)日：2015-08-06

申请号：US14540969

申请日：2014-11-13

申请人： Jung Seung YANG ,  Seong Joon CHO ,  Bum Joon KIM ,  Dong Gyu SHIN ,  Hyun Wook SHIM ,  Suk Ho YOON

发明人： Jung Seung YANG ,  Seong Joon CHO ,  Bum Joon KIM ,  Dong Gyu SHIN ,  Hyun Wook SHIM ,  Suk Ho YOON

IPC分类号： H01L33/24 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/24 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/32

摘要： The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

摘要翻译： 氮化物半导体发光器件包括第一导电型氮化物半导体层，设置在第一导电型氮化物半导体层上的第一超晶格层，设置在第一超晶格层上并具有多个V形凹坑的凹坑形成层 ，第二超晶格层，有源层和设置在有源层上并填充V形凹坑的第二导电型氮化物半导体层。 第二超晶格层设置在凹坑形成层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。 有源层设置在第二超晶格层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。

公开(公告)号：US20150311062A1

公开(公告)日：2015-10-29

申请号：US14578940

申请日：2014-12-22

申请人： Dong Yul LEE ,  Sang Heon HAN ,  Seung Hyun KIM ,  Jang Mi KIM ,  William SOLARI ,  Hyun Wook SHIM ,  Suk Ho YOON

发明人： Dong Yul LEE ,  Sang Heon HAN ,  Seung Hyun KIM ,  Jang Mi KIM ,  William SOLARI ,  Hyun Wook SHIM ,  Suk Ho YOON

IPC分类号： H01L21/02 ,  H01L33/00

CPC分类号： H01L21/0254 ,  C23C16/34 ,  C23C16/4404 ,  H01L21/02107 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02496 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

摘要翻译： 一种制造半导体器件的方法包括通过向处理室提供铝（Al）源，与处理室中的铝源接触的表面，在处理室的表面上形成铝化合物膜; 在形成铝化合物膜之后，在设置在处理室中的基座上设置晶片; 并在晶片上形成用于半导体器件的薄膜。

公开(公告)号：US20110121259A1

公开(公告)日：2011-05-26

申请号：US12902233

申请日：2010-10-12

申请人： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

发明人： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

摘要翻译： 提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。 氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。 彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。

公开(公告)号：US20120168769A1

公开(公告)日：2012-07-05

申请号：US13344298

申请日：2012-01-05

申请人： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

发明人： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

IPC分类号： H01L33/02

CPC分类号： H01L33/0075 ,  H01L33/007 ,  H01L33/32

摘要： There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

摘要翻译： 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。

公开(公告)号：US20120104432A1

公开(公告)日：2012-05-03

申请号：US13223902

申请日：2011-09-01

申请人： Hyun Wook SHIM ,  Dong Ju Lee ,  Sung Tae Kim

发明人： Hyun Wook SHIM ,  Dong Ju Lee ,  Sung Tae Kim

IPC分类号： H01L33/42

CPC分类号： H01L33/42

摘要： A semiconductor light emitting device includes: a semiconductor light emission stacked body including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first and second conductive semiconductor layers; and a highly conductive transparent electrode formed on at least one of the first and second conductive semiconductor layers and including a transparent electrode layer formed of at least one of a transparent conductive oxide layer and a transparent conductive nitride and a graphene layer allowing light within the visible spectrum to be transmitted therethrough, the transparent electrode layer and the graphene layer being stacked.

摘要翻译： 一种半导体发光器件包括：半导体发光层叠体，包括第一导电半导体层，第二导电半导体层和位于第一和第二导电半导体层之间的有源层; 以及形成在第一和第二导电半导体层中的至少一个上的高导电性透明电极，并且包括由透明导电氧化物层和透明导电氮化物中的至少一种形成的透明电极层和允许可见光内的光的石墨烯层 要透射的光谱，透明电极层和石墨烯层被堆叠。