公开(公告)号：US20130004119A1

公开(公告)日：2013-01-03

申请号：US13173743

申请日：2011-06-30

申请人： Tao Yin ,  Yun-Chung Na

发明人： Tao Yin ,  Yun-Chung Na

IPC分类号： G02B6/12

CPC分类号： G02B6/30 ,  G02B6/12004 ,  G02B6/42 ,  G02B6/4204 ,  G02B2006/12102

摘要： Embodiments of the invention provide optical lenses comprised of layers of material each having a different index of refraction from that of the other layers wherein the layers of material are arranged in order of increasing index of refraction. The lens region is capable of causing an optical beam that enters the lens region to be focused into an output beam that is smaller in at least one dimension. A waveguide is optically coupled to the optical lens and a photodetector is optically coupled to the waveguide. The optical lens is capable of being manufactured using semiconductor processing techniques and is capable of being integrated into an integrated circuit chip.

摘要翻译： 本发明的实施例提供了由各层材料组成的光学透镜，每个层具有与其它层的折射率不同的折射率，其中材料层按照增加折射率的顺序排列。 透镜区域能够使进入透镜区域的光束聚焦成在至少一个维度上更小的输出光束。 波导光学耦合到光学透镜，并且光电检测器光耦合到波导。 光学透镜能够使用半导体处理技术制造，并且能够集成到集成电路芯片中。

公开(公告)号：US08625937B2

公开(公告)日：2014-01-07

申请号：US13173743

申请日：2011-06-30

申请人： Tao Yin ,  Yun-Chung Na

发明人： Tao Yin ,  Yun-Chung Na

IPC分类号： G02B6/12 ,  G02B6/32

CPC分类号： G02B6/30 ,  G02B6/12004 ,  G02B6/42 ,  G02B6/4204 ,  G02B2006/12102

摘要： Embodiments of the invention provide optical lenses comprised of layers of material each having a different index of refraction from that of the other layers wherein the layers of material are arranged in order of increasing index of refraction. The lens region is capable of causing an optical beam that enters the lens region to be focused into an output beam that is smaller in at least one dimension. A waveguide is optically coupled to the optical lens and a photodetector is optically coupled to the waveguide. The optical lens is capable of being manufactured using semiconductor processing techniques and is capable of being integrated into an integrated circuit chip.

摘要翻译： 本发明的实施例提供了由各层材料组成的光学透镜，每个层具有与其它层的折射率不同的折射率，其中材料层按照增加折射率的顺序排列。 透镜区域能够使进入透镜区域的光束聚焦成在至少一个维度上更小的输出光束。 波导光学耦合到光学透镜，并且光电检测器光耦合到波导。 光学透镜能够使用半导体处理技术制造，并且能够集成到集成电路芯片中。

公开(公告)号：US08488923B2

公开(公告)日：2013-07-16

申请号：US12749196

申请日：2010-03-29

申请人： Yun-Chung Na ,  Tao Yin

发明人： Yun-Chung Na ,  Tao Yin

IPC分类号： G02B6/26

CPC分类号： G02B6/305 ,  G02B6/1228 ,  G02B6/26 ,  G02B6/2808

摘要： Optical interfaces that may be employed between large-core optical fibers and chip-scale optoelectronic devices. Described herein are couplers that improve the tolerance of misalignment when a single mode (SM) fiber is used as waveguide input. This enables the possibility of passive/automatic alignment and therefore reduces the production cost. The coupler also serves as a spot-size converter that reduces the spot size and is suitable for applications where a waveguide mode with small cross-section area is of particular importance. One such example can be a waveguide-based SiGe or III-V semiconductor photodetector in which the vertical size of its waveguide mode should be as small as few microns.

摘要翻译： 可在大芯光纤和芯片级光电器件之间采用的光接口。 这里描述的是当使用单模（SM）光纤作为波导输入时改善偏差公差的耦合器。 这使得能够进行被动/自动对准，并因此降低生产成本。 耦合器还用作点尺寸转换器，其减小了光斑尺寸，并且适用于具有小横截面积的波导模式特别重要的应用。 一个这样的示例可以是基于波导的SiGe或III-V半导体光电检测器，其中波导模式的垂直尺寸应该小到几微米。

公开(公告)号：US20100258746A1

公开(公告)日：2010-10-14

申请号：US12798751

申请日：2010-04-08

申请人： Yun-Chung Na ,  Yoshihisa Yamamoto

发明人： Yun-Chung Na ,  Yoshihisa Yamamoto

IPC分类号： G21G7/00

CPC分类号： B82Y10/00 ,  G06N10/00

摘要： Deterministic generation of nonclassical photons by producing a dilute gas of exciton-polaritons in a solid-state microcavity that includes a periodic array of potential well traps. A photon-exciton frequency detuning is modulated in the microcavity to produce a polaritonic quantum phase transition from a superfluid state to a Mott-insulator state. The nonclassical photons are then generated simultaneously by radiative decay of exciton-polaritons in the microcavity. The nonclassical photons may be indistinguishable single photons, in which case the dilute gas of exciton-polaritons is produced such that on to average there is one polariton per potential well trap. Alternatively, the generated nonclassical photons may be polarization-entangled photon pairs, in which case the dilute gas of exciton-polaritons is produced such that on average there are two polaritons per potential well trap.

摘要翻译： 通过在固态微腔中产生激子 - 极化子的稀释气体来确定性地产生非经典光子，其包括潜在阱阱的周期性阵列。 在微腔中调制光子 - 激子频率失谐以产生从超流体状态到Mott绝缘体状态的极化量子相变。 然后通过微腔中的激子 - 极化子的辐射衰减同时产生非经典光子。 非经典光子可能是不可区分的单个光子，在这种情况下，产生激子 - 极化子的稀释气体，使得平均每个潜在的阱陷阱有一个极化子。 或者，所生成的非经典光子可以是偏振纠缠的光子对，在这种情况下，产生激子 - 极化子的稀释气体，使得每个势阱陷阱平均有两个极化子。

公开(公告)号：US20150037048A1

公开(公告)日：2015-02-05

申请号：US14129181

申请日：2013-08-02

申请人： Yun-Chung Na ,  Han-Din Liu ,  Yimin Kang ,  Shu-Lu Chen

发明人： Yun-Chung Na ,  Han-Din Liu ,  Yimin Kang ,  Shu-Lu Chen

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H04B10/60 ,  H01L31/0232 ,  H01L31/108 ,  H01L31/18 ,  H01L31/107 ,  H01L31/028

CPC分类号： H01L31/02161 ,  G02B6/12004 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/107 ,  H01L31/1085 ,  H01L31/1868 ,  H01L31/1872 ,  H04B10/60 ,  Y02E10/547 ,  Y02P70/521

摘要： A low voltage photodetector structure including a semiconductor device layer, which may be Ge, is disposed over a substrate semiconductor, which may be Si, for example within a portion of a waveguide extending laterally within a photonic integrated circuit (PIC) chip. In exemplary embodiments where the device layer is formed over an insulator layer, the insulator layer is removed to expose a surface of the semiconductor device layer and a passivation material formed as a replacement for the insulator layer within high field regions. In further embodiments, controlled avalanche gain is achieved by spacing electrodes in a metal-semiconductor-metal (MSM) architecture, or complementary doped regions in a p-i-n architecture, to provide a field strength sufficient for impact ionization over a distance not significantly more than an order of magnitude greater than the distance that a carrier must travel so as to acquire sufficient energy for impact ionization.

摘要翻译： 包括可以是Ge的半导体器件层的低电压光电检测器结构设置在衬底半导体上，衬底半导体可以是Si，例如在光子集成电路（PIC）芯片内横向延伸的波导的一部分内。 在其中器件层形成在绝缘体层上的示例性实施例中，去除绝缘体层以暴露半导体器件层的表面和形成为高场区域内的绝缘体层的替代物的钝化材料。 在另外的实施例中，受控的雪崩增益通过在金属 - 半导体 - 金属（MSM）结构中的电极间隔或引脚结构中的互补掺杂区域间隔来实现，以提供足够的冲击电离的场强，该距离不大于 数量级大于载体必须行进的距离，以获得足够的能量进行冲击电离。

公开(公告)号：US08970956B2

公开(公告)日：2015-03-03

申请号：US13075422

申请日：2011-03-30

申请人： Yun-Chung Na ,  John Heck ,  Haisheng Rong

发明人： Yun-Chung Na ,  John Heck ,  Haisheng Rong

IPC分类号： G02B5/18

CPC分类号： G02B5/1857 ,  G02B5/1842 ,  G02B5/1861 ,  G02B6/02009

摘要： Methods of forming microelectronic structures are described. Embodiments of those methods may include forming a photomask on a (110) silicon wafer substrate, wherein the photomask comprises a periodic array of parallelogram openings, and then performing a timed wet etch on the (110) silicon wafer substrate to form a diffraction grating structure that is etched into the (110) silicon wafer substrate.

摘要翻译： 描述形成微电子结构的方法。 这些方法的实施例可以包括在（110）硅晶片衬底上形成光掩模，其中光掩模包括平行四边形开口的周期性阵列，然后在（110）硅晶片衬底上执行定时湿蚀刻以形成衍射光栅结构 被蚀刻到（110）硅晶片衬底中。

公开(公告)号：US20120250157A1

公开(公告)日：2012-10-04

申请号：US13075422

申请日：2011-03-30

申请人： Yun-Chung Na ,  John Heck ,  Haisheng Rong

发明人： Yun-Chung Na ,  John Heck ,  Haisheng Rong

IPC分类号： G02B5/18 ,  C23F1/32 ,  C23F1/00

CPC分类号： G02B5/1857 ,  G02B5/1842 ,  G02B5/1861 ,  G02B6/02009

摘要： Methods of forming microelectronic structures are described. Embodiments of those methods may include forming a photomask on a (110) silicon wafer substrate, wherein the photomask comprises a periodic array of parallelogram openings, and then performing a timed wet etch on the (110) silicon wafer substrate to form a diffraction grating structure that is etched into the (110) silicon wafer substrate.

摘要翻译： 描述形成微电子结构的方法。 这些方法的实施例可以包括在（110）硅晶片衬底上形成光掩模，其中光掩模包括平行四边形开口的周期性阵列，然后在（110）硅晶片衬底上执行定时湿蚀刻以形成衍射光栅结构 被蚀刻到（110）硅晶片衬底中。