公开(公告)号：US07968216B2

公开(公告)日：2011-06-28

申请号：US11794910

申请日：2006-01-06

申请人： Taro Hitosugi ,  Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Yasushi Hirose ,  Junpei Kasai ,  Miki Moriyama

发明人： Taro Hitosugi ,  Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Yasushi Hirose ,  Junpei Kasai ,  Miki Moriyama

IPC分类号： H01L21/70 ,  C23C14/08 ,  C23C14/28 ,  C30B29/16 ,  B05D5/12

CPC分类号： C23C14/28 ,  C23C14/021 ,  C23C14/083 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B29/16

摘要： There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlxGayInzN layer (wherein 0≦x≦1, 0≦y≦1, and 0≦z≦1) and an oxide material layer composed of a metal oxide and formed on the AlxGayInzN layer. The metal oxide may be TiO2. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

摘要翻译： 已经有对透明电极材料和磁性材料的要求，各自具有广泛的应用。 鉴于这些情况，提供了新颖的功能装置和形成氧化物材料的方法。 功能元件包括AlxGayInzN层（其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和0＆nlE; z＆nlE; 1）和由Al x Ga y In N N层形成的金属氧化物构成的氧化物材料层。 金属氧化物可以是TiO 2。 本发明提供了具有优异的物理和化学特性的III族氮化物层和在其上一体形成的膜的功能器件。 该膜在界面处反射较少的光，并具有耐化学性和高耐久性。

公开(公告)号：US20100035082A1

公开(公告)日：2010-02-11

申请号：US11794910

申请日：2006-01-06

申请人： Taro Hitosugi ,  Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Yasushi Hirose ,  Junpei Kasai ,  Miki Moriyama

发明人： Taro Hitosugi ,  Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Yasushi Hirose ,  Junpei Kasai ,  Miki Moriyama

IPC分类号： H01L21/70 ,  C23C14/08 ,  C23C14/28 ,  C30B29/16 ,  B05D5/12

CPC分类号： C23C14/28 ,  C23C14/021 ,  C23C14/083 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B29/16

摘要： There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlxGayInzN layer (wherein 0≦x≦1, 0≦y≦1, and 0≦z≦1) and an oxide material layer composed of a metal oxide and formed on the AlxGayInzN layer. The metal oxide may be TiO2. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

摘要翻译： 已经有对透明电极材料和磁性材料的要求，各自具有广泛的应用。 鉴于这些情况，提供了新颖的功能装置和形成氧化物材料的方法。 功能器件包括AlxGayInzN层（其中0≤x≤1,0<= y <= 1且0 <= z <= 1）和由金属氧化物构成并形成在Al x Ga y In Zn层上的氧化物材料层 。 金属氧化物可以是TiO 2。 本发明提供了具有优异的物理和化学特性的III族氮化物层和在其上一体形成的膜的功能器件。 该膜在界面处反射较少的光，并具有耐化学性和高耐久性。

公开(公告)号：US07858206B2

公开(公告)日：2010-12-28

申请号：US11573678

申请日：2005-08-10

申请人： Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Taro Hitosugi

发明人： Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Taro Hitosugi

IPC分类号： H01B5/14 ,  G02F1/1343 ,  H01M14/00 ,  H05B33/28 ,  H05B33/14 ,  G09F9/30

CPC分类号： C03C17/2456 ,  C03C17/34 ,  C03C2217/212 ,  C03C2217/218 ,  C03C2217/23 ,  C03C2217/24 ,  C03C2218/15 ,  G02F1/13439 ,  G02F2201/12 ,  G02F2202/06 ,  G02F2203/01 ,  H01B1/08 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  H01M4/48 ,  H01M14/005 ,  H05B33/28 ,  Y02E10/50 ,  Y10T428/12667

摘要： With regard to a substrate for a transparent electrode and transparent conductive thin film each having transparency and conductivity, a transparent metal material and transparent electrode are provided which are capable of being stably supplied and are composed of raw materials with superior chemical resistance. When a metal oxide layer (12) composed of an anatase type crystal structure is provided on a substrate (11) to constitute the metal oxide layer (12) by M:TiO2, low resistivity is achieved while internal transmittance is maintained. M:TiO2 obtained by substituting other atoms (Nb, Ta, Mo, As, Sb, or W) for Ti of the anatase type TiO2 enable maintenance of transparency and remarkably improvement of electric conductivity.

摘要翻译： 对于具有透明性和导电性的透明电极用基板和透明导电性薄膜，设置透明金属材料和透明电极，其能够稳定地供给，并且由具有优异的耐化学性的原材料构成。 当通过M：TiO 2在基板（11）上设置由锐钛矿型晶体结构构成的金属氧化物层（12）构成金属氧化物层（12）时，实现了内部透射率的低电阻率。 M：通过用锐钛矿型TiO的Ti代替其他原子（Nb，Ta，Mo，As，Sb或W）获得的TiO 2能够保持透明性并显着提高电导率。

公开(公告)号：US20070287025A1

公开(公告)日：2007-12-13

申请号：US11573678

申请日：2005-08-10

申请人： Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Taro Hitosugi

发明人： Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Taro Hitosugi

IPC分类号： H01B5/14 ,  G02F1/1343 ,  H01M14/00 ,  H05B33/28 ,  H05B33/14 ,  G09F9/30

CPC分类号： C03C17/2456 ,  C03C17/34 ,  C03C2217/212 ,  C03C2217/218 ,  C03C2217/23 ,  C03C2217/24 ,  C03C2218/15 ,  G02F1/13439 ,  G02F2201/12 ,  G02F2202/06 ,  G02F2203/01 ,  H01B1/08 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  H01M4/48 ,  H01M14/005 ,  H05B33/28 ,  Y02E10/50 ,  Y10T428/12667

摘要： With regard to a substrate for a transparent electrode and transparent conductive thin film each having transparency and conductivity, a transparent metal material and transparent electrode are provided which are capable of being stably supplied and are composed of raw materials with superior chemical resistance. When a metal oxide layer (12) composed of an anatase type crystal structure is provided on a substrate (11) to constitute the metal oxide layer (12) by M:TiO2, low resistivity is achieved while internal transmittance is maintained. M:TiO2 obtained by substituting other atoms (Nb, Ta, Mo, As, Sb, or W) for Ti of the anatase type TiO2 enable maintenance of transparency and remarkably improvement of electric conductivity.

摘要翻译： 对于具有透明性和导电性的透明电极用基板和透明导电性薄膜，设置透明金属材料和透明电极，其能够稳定地供给，并且由具有优异的耐化学性的原材料构成。 当通过M：TiO 2 2将由锐钛矿型晶体结构构成的金属氧化物层（12）设置在基板（11）上以构成金属氧化物层（12）时，实现低电阻率，而 保持内部透光率。 通过用锐钛矿型TiO 2的Ti代替其它原子（Nb，Ta，Mo，As，Sb或W）而获得的M：TiO 2可以维持透明度和 电导率显着提高。