公开(公告)号：US07968216B2

公开(公告)日：2011-06-28

申请号：US11794910

申请日：2006-01-06

申请人： Taro Hitosugi ,  Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Yasushi Hirose ,  Junpei Kasai ,  Miki Moriyama

发明人： Taro Hitosugi ,  Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Yasushi Hirose ,  Junpei Kasai ,  Miki Moriyama

IPC分类号： H01L21/70 ,  C23C14/08 ,  C23C14/28 ,  C30B29/16 ,  B05D5/12

CPC分类号： C23C14/28 ,  C23C14/021 ,  C23C14/083 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B29/16

摘要： There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlxGayInzN layer (wherein 0≦x≦1, 0≦y≦1, and 0≦z≦1) and an oxide material layer composed of a metal oxide and formed on the AlxGayInzN layer. The metal oxide may be TiO2. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

摘要翻译： 已经有对透明电极材料和磁性材料的要求，各自具有广泛的应用。 鉴于这些情况，提供了新颖的功能装置和形成氧化物材料的方法。 功能元件包括AlxGayInzN层（其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和0＆nlE; z＆nlE; 1）和由Al x Ga y In N N层形成的金属氧化物构成的氧化物材料层。 金属氧化物可以是TiO 2。 本发明提供了具有优异的物理和化学特性的III族氮化物层和在其上一体形成的膜的功能器件。 该膜在界面处反射较少的光，并具有耐化学性和高耐久性。

公开(公告)号：US20100035082A1

公开(公告)日：2010-02-11

申请号：US11794910

申请日：2006-01-06

申请人： Taro Hitosugi ,  Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Yasushi Hirose ,  Junpei Kasai ,  Miki Moriyama

发明人： Taro Hitosugi ,  Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Yasushi Hirose ,  Junpei Kasai ,  Miki Moriyama

IPC分类号： H01L21/70 ,  C23C14/08 ,  C23C14/28 ,  C30B29/16 ,  B05D5/12

CPC分类号： C23C14/28 ,  C23C14/021 ,  C23C14/083 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B29/16

摘要： There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlxGayInzN layer (wherein 0≦x≦1, 0≦y≦1, and 0≦z≦1) and an oxide material layer composed of a metal oxide and formed on the AlxGayInzN layer. The metal oxide may be TiO2. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

摘要翻译： 已经有对透明电极材料和磁性材料的要求，各自具有广泛的应用。 鉴于这些情况，提供了新颖的功能装置和形成氧化物材料的方法。 功能器件包括AlxGayInzN层（其中0≤x≤1,0<= y <= 1且0 <= z <= 1）和由金属氧化物构成并形成在Al x Ga y In Zn层上的氧化物材料层 。 金属氧化物可以是TiO 2。 本发明提供了具有优异的物理和化学特性的III族氮化物层和在其上一体形成的膜的功能器件。 该膜在界面处反射较少的光，并具有耐化学性和高耐久性。

公开(公告)号：US07858206B2

公开(公告)日：2010-12-28

申请号：US11573678

申请日：2005-08-10

申请人： Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Taro Hitosugi

发明人： Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Taro Hitosugi

IPC分类号： H01B5/14 ,  G02F1/1343 ,  H01M14/00 ,  H05B33/28 ,  H05B33/14 ,  G09F9/30

CPC分类号： C03C17/2456 ,  C03C17/34 ,  C03C2217/212 ,  C03C2217/218 ,  C03C2217/23 ,  C03C2217/24 ,  C03C2218/15 ,  G02F1/13439 ,  G02F2201/12 ,  G02F2202/06 ,  G02F2203/01 ,  H01B1/08 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  H01M4/48 ,  H01M14/005 ,  H05B33/28 ,  Y02E10/50 ,  Y10T428/12667

摘要： With regard to a substrate for a transparent electrode and transparent conductive thin film each having transparency and conductivity, a transparent metal material and transparent electrode are provided which are capable of being stably supplied and are composed of raw materials with superior chemical resistance. When a metal oxide layer (12) composed of an anatase type crystal structure is provided on a substrate (11) to constitute the metal oxide layer (12) by M:TiO2, low resistivity is achieved while internal transmittance is maintained. M:TiO2 obtained by substituting other atoms (Nb, Ta, Mo, As, Sb, or W) for Ti of the anatase type TiO2 enable maintenance of transparency and remarkably improvement of electric conductivity.

摘要翻译： 对于具有透明性和导电性的透明电极用基板和透明导电性薄膜，设置透明金属材料和透明电极，其能够稳定地供给，并且由具有优异的耐化学性的原材料构成。 当通过M：TiO 2在基板（11）上设置由锐钛矿型晶体结构构成的金属氧化物层（12）构成金属氧化物层（12）时，实现了内部透射率的低电阻率。 M：通过用锐钛矿型TiO的Ti代替其他原子（Nb，Ta，Mo，As，Sb或W）获得的TiO 2能够保持透明性并显着提高电导率。

公开(公告)号：US20070287025A1

公开(公告)日：2007-12-13

申请号：US11573678

申请日：2005-08-10

申请人： Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Taro Hitosugi

发明人： Yutaka Furubayashi ,  Tetsuya Hasegawa ,  Taro Hitosugi

IPC分类号： H01B5/14 ,  G02F1/1343 ,  H01M14/00 ,  H05B33/28 ,  H05B33/14 ,  G09F9/30

CPC分类号： C03C17/2456 ,  C03C17/34 ,  C03C2217/212 ,  C03C2217/218 ,  C03C2217/23 ,  C03C2217/24 ,  C03C2218/15 ,  G02F1/13439 ,  G02F2201/12 ,  G02F2202/06 ,  G02F2203/01 ,  H01B1/08 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  H01M4/48 ,  H01M14/005 ,  H05B33/28 ,  Y02E10/50 ,  Y10T428/12667

摘要： With regard to a substrate for a transparent electrode and transparent conductive thin film each having transparency and conductivity, a transparent metal material and transparent electrode are provided which are capable of being stably supplied and are composed of raw materials with superior chemical resistance. When a metal oxide layer (12) composed of an anatase type crystal structure is provided on a substrate (11) to constitute the metal oxide layer (12) by M:TiO2, low resistivity is achieved while internal transmittance is maintained. M:TiO2 obtained by substituting other atoms (Nb, Ta, Mo, As, Sb, or W) for Ti of the anatase type TiO2 enable maintenance of transparency and remarkably improvement of electric conductivity.

摘要翻译： 对于具有透明性和导电性的透明电极用基板和透明导电性薄膜，设置透明金属材料和透明电极，其能够稳定地供给，并且由具有优异的耐化学性的原材料构成。 当通过M：TiO 2 2将由锐钛矿型晶体结构构成的金属氧化物层（12）设置在基板（11）上以构成金属氧化物层（12）时，实现低电阻率，而 保持内部透光率。 通过用锐钛矿型TiO 2的Ti代替其它原子（Nb，Ta，Mo，As，Sb或W）而获得的M：TiO 2可以维持透明度和 电导率显着提高。

公开(公告)号：US20100129536A1

公开(公告)日：2010-05-27

申请号：US12693715

申请日：2010-01-26

申请人： Naoomi Yamada ,  Taro Hitosugi ,  Tetsuya Hasegawa

发明人： Naoomi Yamada ,  Taro Hitosugi ,  Tetsuya Hasegawa

IPC分类号： B05D5/12 ,  C23C14/34

CPC分类号： C23C14/083 ,  C03C17/2456 ,  C03C2217/212 ,  C03C2217/218 ,  C03C2217/24 ,  C03C2218/15 ,  C03C2218/32 ,  C23C14/0036 ,  C23C14/352 ,  G02F1/13439

摘要： To provide a process capable of producing a titanium oxide electric conductor layer having excellent electric conductivity and good transparency, with high productivity.A first layer and a second layer each made of titanium oxide doped with a dopant such as Nb, are formed in order on a substrate in a state where the substrate is heated to prepare an electric conductor layer comprising an electric conductor layer. The first layer is formed under film formation conditions under which it is a layer containing polycrystals which contain no rutile crystals. The second layer is formed under film formation conditions under which a layer containing polycrystals which contain rutile crystals is obtained when directly formed on a substrate.

摘要翻译： 提供能够以高生产率制造具有优异导电性和良好透明性的氧化钛导电体层的方法。 在基板被加热的状态下，在衬底上依次形成由掺杂有诸如Nb的氧化钛构成的第一层和第二层，以制备包括导电体层的导电体层。 第一层是在成膜条件下形成的，其中是含有不含金红石晶体的多晶的层。 第二层在成膜条件下形成，在直接形成在基材上的情况下，获得含有金红石晶体的多晶体层。

公开(公告)号：US20100075176A1

公开(公告)日：2010-03-25

申请号：US12561714

申请日：2009-09-17

申请人： Naoomi YAMADA ,  Taro Hitosugi ,  Tetsuya Hasegawa

发明人： Naoomi YAMADA ,  Taro Hitosugi ,  Tetsuya Hasegawa

IPC分类号： B05D5/12 ,  C23C14/34 ,  H05K9/00 ,  H01B5/00 ,  G02B5/26 ,  B32B9/00

CPC分类号： C23C14/083 ,  C03C17/2456 ,  C03C2217/212 ,  C03C2217/218 ,  C03C2217/24 ,  C03C2218/15 ,  C03C2218/32 ,  C23C14/024 ,  C23C14/08 ,  C23C14/5806 ,  G02F1/13439 ,  H01B1/08 ,  H01L51/442

摘要： To provide a process whereby a titanium oxide type electrical conductor excellent in electrical conductivity with good transparency can be produced with good productivity.A process for producing an electrical conductor, which comprises a laminate-forming step of forming a precursor laminate having a first precursor layer and a second precursor layer laminated in an optional order on a substrate, and an annealing step of heating the precursor laminate in a reducing atmosphere for annealing to form a metal oxide layer from the first precursor layer and the second precursor layer, wherein the first precursor layer is a titanium oxide layer made of titanium oxide containing Nb, which, when subjected to a single layer annealing test, becomes a titanium oxide layer containing a polycrystal which is free from a rutile type crystal, and the second precursor layer is an amorphous titanium oxide layer made of titanium oxide containing Nb, which, when subjected to a single layer annealing test, becomes a titanium oxide layer containing a polycrystal which contains a rutile type crystal.

摘要翻译： 为了提供一种能够以良好的生产率制造具有良好透明性的导电性优异的氧化钛型电导体的方法。 一种电导体的制造方法，其特征在于，包括：在基板上形成具有以任意顺序层叠的第一前体层和第二前体层的前体层叠体的层叠形成工序，以及将前体层叠体加热到 还原性气氛进行退火以从第一前体层和第二前体层形成金属氧化物层，其中第一前体层是由含有Nb的氧化钛制成的氧化钛层，当进行单层退火试验时， 含有不含金红石型晶体的多晶体的氧化钛层，第二前体层是由含有Nb的氧化钛构成的非晶态氧化钛层，当进行单层退火试验时，其成为氧化钛层 含有含有金红石型晶体的多晶体。

公开(公告)号：US08716047B2

公开(公告)日：2014-05-06

申请号：US12585015

申请日：2009-08-31

申请人： Koichi Goshonoo ,  Miki Moriyama ,  Taro Hitosugi ,  Tetsuya Hasegawa ,  Junpei Kasai

发明人： Koichi Goshonoo ,  Miki Moriyama ,  Taro Hitosugi ,  Tetsuya Hasegawa ,  Junpei Kasai

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L33/44 ,  H01L33/0095

摘要： When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10−3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.

摘要翻译： 当由氮化镓组成的p层4保持在常温下并通过RF磁控溅射法溅射TNO时，层压TNO层5处于非晶态。 然后，包括在减压气氛中热处理无定形TNO层的步骤，其中基本上不存在氢气，从而使TNO层结晶。 在溅射时，惰性气体与氧气一起通过，所通过的气体中所含的氧气的体积％为0.10〜0.15％。 在这方面，氧分压为5×10 -3 Pa以下。 热处理温度为500℃约1小时。

公开(公告)号：US20100062558A1

公开(公告)日：2010-03-11

申请号：US12585015

申请日：2009-08-31

申请人： Koichi Goshonoo ,  Miki Moriyama ,  Taro Hitosugi ,  Tetsuya Hasegawa ,  Junpei Kasai

发明人： Koichi Goshonoo ,  Miki Moriyama ,  Taro Hitosugi ,  Tetsuya Hasegawa ,  Junpei Kasai

IPC分类号： H01L21/283

CPC分类号： H01L33/44 ,  H01L33/0095

摘要： When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10−3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.

摘要翻译： 当由氮化镓组成的p层4保持在常温下并通过RF磁控溅射法溅射TNO时，层压TNO层5处于非晶态。 然后，包括在减压气氛中热处理无定形TNO层的步骤，其中基本上不存在氢气，从而使TNO层结晶。 在溅射时，惰性气体与氧气一起通过，所通过的气体中所含的氧气的体积％为0.10〜0.15％。 在这方面，氧分压为5×10 -3 Pa以下。 热处理温度为500℃约1小时。

公开(公告)号：US20110011632A1

公开(公告)日：2011-01-20

申请号：US12887553

申请日：2010-09-22

申请人： Shoichiro NAKAO ,  Naoomi Yamada ,  Taro Hitosugi ,  Tetsuya Hasegawa

发明人： Shoichiro NAKAO ,  Naoomi Yamada ,  Taro Hitosugi ,  Tetsuya Hasegawa

IPC分类号： H05K1/09 ,  B05D5/12 ,  C23C14/28 ,  C23C14/34

CPC分类号： C23C14/083 ,  C23C14/5806

摘要： An electric conductor having good electric conductivity and excellent heat resistance, and a process for its production are provided.An electric conductor comprising a substrate 10 and at least two layers formed on the substrate, each being a layer (Z) made of titanium oxide doped with at least one dopant selected from the group consisting of Nb, Ta, Mo, As, Sb, W, N, F, S, Se, Te, Cr, Ni, Tc, Re, P and Bi, wherein at least one layer among said at least two layers is a second layer (Z2) 12 wherein the percentage of the number of dopant atoms based on the total number of titanium and dopant atoms is from 0.01 to 4 atomic %; and between the second layer (Z2) 12 and the substrate 10, a first layer (Z1) 11 is formed wherein the percentage of the number of dopant atoms based on the total number of titanium and dopant atoms is larger than in the second layer (Z2).

摘要翻译： 提供导电性良好，耐热性优异的导电体及其制造方法。 一种电导体，包括基板10和形成在基板上的至少两层，每层由掺杂有选自Nb，Ta，Mo，As，Sb的至少一种掺杂剂的氧化钛制成的层（Z） W，N，F，S，Se，Te，Cr，Ni，Tc，Re，P和Bi，其中所述至少两层中的至少一层是第二层（Z2）12，其中， 基于钛和掺杂剂原子的总数的掺杂剂原子为0.01至4原子％; 并且在第二层（Z2）12和衬底10之间，形成第一层（Z1）11，其中基于钛和掺杂剂原子的总数的掺杂剂原子数的百分比大于第二层 Z2）。

公开(公告)号：US20080308833A1

公开(公告)日：2008-12-18

申请号：US12153787

申请日：2008-05-23

申请人： Miki Moriyama ,  Koichi Goshonoo ,  Taro Hitosugi ,  Tetsuya Hasegawa

发明人： Miki Moriyama ,  Koichi Goshonoo ,  Taro Hitosugi ,  Tetsuya Hasegawa

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L2933/0091

摘要： The refractive index of a titanium oxide layer is modified by adding an impurity (e.g., niobium (Nb)) thereto within a range where good electrical conductivity is obtained. The Group III nitride-based compound semiconductor light-emitting device of the invention includes a sapphire substrate, an aluminum nitride (AlN) buffer layer, an n-contact layer, an n-cladding layer, a multiple quantum well layer (emission wavelength: 470 nm), a p-cladding layer, and a p-contact layer. On the p-contact layer is provided a transparent electrode made of niobium titanium oxide and having an embossment. An electrode is provided on the n-contact layer. An electrode pad is provided on a portion of the transparent electrode. Since the transparent electrode is formed from titanium oxide containing 3% niobium, the refractive index with respect to light (wavelength: 470 nm) becomes almost equal to that of the p-contact layer. Thus, the total reflection at the interface between the p-contact layer and the transparent electrode can be avoided to the smallest possible extent. In addition, by virtue of the embossment, light extraction performance is increased by 30%.

摘要翻译： 通过在获得良好的导电性的范围内添加杂质（例如铌（Nb））来改变氧化钛层的折射率。 本发明的III族氮化物系化合物半导体发光元件包括蓝宝石衬底，氮化铝（AlN）缓冲层，n接触层，n包层，多量子阱层（发射波长： 470nm），p包覆层和p接触层。 在p接触层上设置由氧化钛铌构成的透明电极，并具有压纹。 电极设置在n接触层上。 电极焊盘设置在透明电极的一部分上。 由于透明电极由含有3％铌的氧化钛形成，相对于光（波长：470nm）的折射率变得几乎等于p接触层的折射率。 因此，可以尽可能小的程度地避免p-接触层和透明电极之间的界面处的全反射。 此外，由于压花，光提取性能提高了30％。