公开(公告)号：US09947782B2

公开(公告)日：2018-04-17

申请号：US13634860

申请日：2010-12-20

申请人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Keiji Wada ,  Tomihito Miyazaki

发明人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Keiji Wada ,  Tomihito Miyazaki

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/20 ,  H01L29/04 ,  H01L29/66 ,  H01L29/739 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/02008 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.

公开(公告)号：US20120070605A1

公开(公告)日：2012-03-22

申请号：US13375287

申请日：2010-09-17

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa ,  Shinsuke Fujiwara

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa ,  Shinsuke Fujiwara

IPC分类号： B32B7/04 ,  B28D5/00 ,  C30B23/02 ,  C01B31/36 ,  B32B9/04

CPC分类号： C30B29/36 ,  C30B23/00 ,  H01L21/02002 ,  Y10T428/192

摘要： An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.

摘要翻译： SiC锭包括具有4个侧面的底面; 四个侧面从与底面方向相交的方向从底面延伸; 以及与位于与底面相对的一侧的侧面连接的生长面。 底面，侧面和生长面中的至少一个是{0001}面，{1-100}面，{11-20}面，或相对于这些平面倾斜10°以内的平面 。

公开(公告)号：US20120068195A1

公开(公告)日：2012-03-22

申请号：US13322937

申请日：2010-09-27

申请人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Hideto Tamaso ,  Yasuo Namikawa

发明人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Hideto Tamaso ,  Yasuo Namikawa

IPC分类号： H01L29/161 ,  H01L21/762

CPC分类号： H01L29/7802 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02529 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; forming a base layer made of silicon carbide and holding the plurality of SiC substrates, which are arranged side by side when viewed in a planar view; and forming a filling portion filling a gap between the plurality of SiC substrates.

摘要翻译： 一种制造碳化硅基板的方法包括以下步骤：制备由单晶碳化硅制成的多个SiC基板; 形成由碳化硅制成的基层，并保持在俯视时并排设置的多个SiC基板; 以及形成填充所述多个SiC衬底之间的间隙的填充部分。

公开(公告)号：US20120056202A1

公开(公告)日：2012-03-08

申请号：US13320247

申请日：2010-04-27

申请人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga ,  Makoto Sasaki ,  Taro Nishiguchi ,  Yasuo Namikawa ,  Shinsuke Fujiwara

发明人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga ,  Makoto Sasaki ,  Taro Nishiguchi ,  Yasuo Namikawa ,  Shinsuke Fujiwara

IPC分类号： H01L29/24

CPC分类号： H01L29/7802 ,  C30B23/00 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×1019 cm−3, and the SiC layer has an impurity concentration greater than 5×1018 cm−3 and smaller than 2×1019 cm−3.

摘要翻译： 一种MOSFET，其是在器件制造工艺中由于热处理而允许抑制堆垛层错而产生降低的导通电阻的半导体器件，包括：碳化硅衬底; 由单晶碳化硅构成的有源层，设置在碳化硅基板的一个主面上; 设置在有源层上的源极接触电极; 以及形成在碳化硅衬底的另一个主表面上的漏电极。 碳化硅基板包括：由碳化硅制成的基层; 以及由单晶碳化硅制成并设置在基底层上的SiC层。 此外，基底层的杂质浓度大于2×1019cm-3，并且SiC层的杂质浓度大于5×1018cm-3且小于2×1019cm-3。

公开(公告)号：USD655256S1

公开(公告)日：2012-03-06

申请号：US29379471

申请日：2010-11-19

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

设计人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

公开(公告)号：US20120032191A1

公开(公告)日：2012-02-09

申请号：US13259012

申请日：2010-09-27

申请人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Hideto Tamaso ,  Yasuo Namikawa

发明人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Hideto Tamaso ,  Yasuo Namikawa

IPC分类号： H01L29/24 ,  H01L21/20

CPC分类号： H01L29/24 ,  C30B23/00 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/187 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/808 ,  H01L29/872

摘要： A method for manufacturing a silicon carbide substrate (1) having a large diameter provided readily includes the steps of: preparing a plurality of SiC substrates (20) each made of single-crystal silicon carbide; and connecting end surfaces (20B) of the plurality of SiC substrates (20) to one another such that the plurality of SiC substrates (20) are arranged side by side when viewed in a planar view.

摘要翻译： 制造具有大直径的碳化硅衬底（1）的方法容易包括以下步骤：制备由单晶碳化硅制成的多个SiC衬底（20）; 并且将所述多个SiC衬底（20）的端面（20B）彼此连接，使得当在平面图中观察时所述多个SiC衬底（20）并排布置。

公开(公告)号：US20120017826A1

公开(公告)日：2012-01-26

申请号：US13258126

申请日：2010-09-28

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： C30B23/06

CPC分类号： C30B29/36 ,  C30B23/025 ,  C30B33/06 ,  H01L21/02002 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  H01L29/1608

摘要： A supporting portion (30c) made of silicon carbide has irregularities at at least a portion of a main surface (FO). The supporting portion (30c) and at least one single crystal substrate (11) made of silicon carbide are stacked such that the backside surface (B1) of each at least one single crystal substrate (11) and the main surface (FO) of the supporting portion (30c) having irregularities formed contact each other. In order to connect the backside surface (B1) of each at least one single crystal substrate (11) to the supporting portion (30c), the supporting portion (30c) and at least one single crystal substrate (11) are heated such that the temperature of the supporting portion (30c) exceeds the sublimation temperature of silicon carbide, and the temperature of each at least one single crystal substrate (11) is below the temperature of the supporting portion (30c).

摘要翻译： 由碳化硅制成的支撑部分（30c）在主表面（FO）的至少一部分处具有凹凸。 支撑部（30c）和由碳化硅构成的至少一个单晶基板（11）被层叠，使得每个至少一个单晶基板（11）的背面（B1）和主晶面 具有形成彼此接触的凹凸的支撑部（30c）。 为了将每个至少一个单晶衬底（11）的背面（B1）连接到支撑部分（30c），支撑部分（30c）和至少一个单晶衬底（11）被加热，使得 支撑部分（30c）的温度超过碳化硅的升华温度，并且每个至少一个单晶衬底（11）的温度低于支撑部分（30c）的温度。

公开(公告)号：US20120012862A1

公开(公告)日：2012-01-19

申请号：US13258801

申请日：2010-09-29

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa ,  Takeyoshi Masuda

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa ,  Takeyoshi Masuda

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0475 ,  H01L21/187 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate.

摘要翻译： 制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的基底基板和由单晶碳化硅制成的SiC基板; 并且通过在基底基板和SiC基板之间形成由导电体的碳制成的中间层，将基底基板与SiC基板相互连接。

公开(公告)号：US20110278593A1

公开(公告)日：2011-11-17

申请号：US13104219

申请日：2011-05-10

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L29/12 ,  C30B23/02 ,  H01L21/20 ,  B32B13/04

CPC分类号： H01L29/7802 ,  C30B23/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible.

摘要翻译： 一种制造碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板设置在坩埚内以面对SiC基板的主表面; 以及通过加热坩埚中的基底基底而形成与碳化硅基体的主表面接触的碳化硅制成的基底层，使其落入构成基底基板的碳化硅的升华温度以上的温度范围内。 在形成基层的步骤中，将含硅的气体引入坩埚中。

公开(公告)号：US20110165764A1

公开(公告)日：2011-07-07

申请号：US13062057

申请日：2010-04-27

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L21/20

CPC分类号： H01L29/7802 ,  C30B23/00 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A first silicon carbide substrate having a first back-side surface and a second silicon carbide substrate having a second back-side surface are prepared. The first and second silicon carbide substrates are placed so as to expose each of the first and second back-side surfaces in one direction. A connecting portion is formed to connect the first and second back-side surfaces to each other. The step of forming the connecting portion includes a step of forming a growth layer made of silicon carbide on each of the first and second back-side surfaces, using a sublimation method of supplying a sublimate thereto in the one direction.

摘要翻译： 制备具有第一背面表面的第一碳化硅衬底和具有第二背面的第二碳化硅衬底。 第一和第二碳化硅衬底被放置成在一个方向上暴露第一和第二后侧表面中的每一个。 连接部形成为将第一和第二背面彼此连接。 形成连接部分的步骤包括在第一和第二后侧表面中的每一个上形成由碳化硅制成的生长层的步骤，使用在一个方向上向其升华的升华方法。