Etching method, method of producing a semiconductor device, and etchant
therefor
    7.
    发明授权
    Etching method, method of producing a semiconductor device, and etchant therefor 失效
    蚀刻方法,制造半导体器件的方法和蚀刻剂

    公开(公告)号:US5688366A

    公开(公告)日:1997-11-18

    申请号:US429039

    申请日:1995-04-26

    CPC分类号: H01L31/022466

    摘要: A method of etching material as a transparent conductive film, a method of producing a semiconductor device, and an etchant therefor are disclosed. These method and etchant are simple, excellent in etching selectivity, and stable for a long time. The methods include the steps of disposing paste on material wherein the paste includes an etching solution and at least one kind of fine particles. A method of producing a semiconductor device, including the above-described etching steps is also disclosed.

    摘要翻译: 公开了蚀刻作为透明导电膜的材料的方法,制造半导体器件的方法和蚀刻剂。 这些方法和蚀刻剂简单,蚀刻选择性优异,长时间稳定。 所述方法包括以下步骤:将糊状物置于材料上,其中糊状物包括蚀刻溶液和至少一种细颗粒。 还公开了包括上述蚀刻步骤的半导体器件的制造方法。