Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same
    2.
    发明授权
    Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same 失效
    用于带电粒子束(CPB)微光刻的基准标记体,其制造方法,以及包括其的CPB微光刻设备

    公开(公告)号:US06632722B2

    公开(公告)日:2003-10-14

    申请号:US10068172

    申请日:2002-02-06

    IPC分类号: H01L2176

    摘要: Fiducial mark bodies are provided for use in CPB microlithography apparatus and methods. Such bodies are especially useful for attachment to the wafer stage of such apparatus, for measuring a distance between a reference position of the CPB-optical system of the apparatus and a reference position of an optical-based alignment sensor of the apparatus. The mark bodies provide improved accuracy of these and other positional measurements. A typical mark body is made of a substrate plate (e.g., quartz or quartz-ceramic) having a low coefficient of thermal expansion. Mark elements are defined on the substrate plate by a layer of heavy metal (e.g. are Ta, W, or Pt). The mark body includes a surficial or interior layer of an electrically conductive light metal that prevents electrostatic charging of the mark body and can be connected to ground.

    摘要翻译: 提供了用于CPB微光刻设备和方法的基准标记体。 这样的主体对于附接到这种装置的晶片台是特别有用的,用于测量装置的CPB-光学系统的基准位置与装置的基于光学的对准传感器的基准位置之间的距离。 标记体提供了这些和其他位置测量的改进的精度。 典型的标记体由具有低热膨胀系数的衬底板(例如石英或石英陶瓷)制成。 标记元件通过重金属层(例如Ta,W或Pt)在衬底板上限定。 标记体包括导电轻金属的表层或内层,其防止标记体的静电充电并且可以连接到地面。

    Charged-particle-beam microlithography methods including chip-exposure sequences for reducing thermally induced lateral shift of exposure position on the substrate
    4.
    发明授权
    Charged-particle-beam microlithography methods including chip-exposure sequences for reducing thermally induced lateral shift of exposure position on the substrate 失效
    带电粒子束微光刻法包括用于减少衬底上曝光位置的热诱导横向位移的片段曝光序列

    公开(公告)号:US06447964B2

    公开(公告)日:2002-09-10

    申请号:US09795258

    申请日:2001-02-27

    IPC分类号: G03C500

    摘要: Methods are disclosed for reducing effects of thermal expansion of a sensitive substrate arising during microlithographic exposure of the substrate using a charged particle beam. Thermal expansion ordinarily causes lateral shift of exposure position of dies (chips) on the substrate which tends to reduce the positional accuracy with which images of the dies are formed on the substrate. Generally, regions of the substrate where entire dies are formed are exposed first, followed by regions (especially peripheral regions) exposed with only portions of dies. In addition, the substrate can be mounted on a wafer chuck configured to circulate a heat-transfer gas in contact with the substrate to remove heat from the substrate. In addition, the wafer chuck can be maintained at a constant temperature by circulating a liquid coolant through a conduit in the body of the wafer chuck.

    摘要翻译: 公开了用于减少使用带电粒子束在基板的微光刻曝光期间产生的敏感基板的热膨胀效应的方法。 热膨胀通常导致基板上的模具(芯片)的曝光位置的横向偏移,这倾向于降低在基板上形成管芯图像的位置精度。 通常,首先露出形成有整个模具的基板的区域,然后暴露出仅一部分模具的区域(特别是周边区域)。 此外,基板可以安装在晶片卡盘上,该卡盘被配置为使与基板接触的传热气体循环,以从基板去除热量。 此外,通过使液体冷却剂通过晶片卡盘的主体中的导管循环,可以将晶片卡盘保持在恒定温度。

    Substrate conveyor apparatus, substrate conveyance method and exposure apparatus
    6.
    发明申请
    Substrate conveyor apparatus, substrate conveyance method and exposure apparatus 有权
    基板输送装置,基板输送方法及曝光装置

    公开(公告)号:US20060087638A1

    公开(公告)日:2006-04-27

    申请号:US11235130

    申请日:2005-09-27

    IPC分类号: G03B27/58

    摘要: With respect to a substrate conveyor apparatus that, being a substrate conveyor apparatus that carries substrates on which patterns are formed, carries the substrates in a state protected by a protective cover when the substrate is not used, a substrate conveyor apparatus having a cover protection means that conceals the inner surface of the protective cover when the substrate is used.

    摘要翻译: 对于作为基板输送装置的基板输送装置,其特征在于,作为基板输送装置,当基板不使用时,承载基板的图案形成在基板上的状态下,将基板保持在被保护盖保护的状态的基板输送装置,具有盖保护装置 当使用基板时,隐藏保护盖的内表面。

    Methods and apparatus for detecting and correcting reticle deformations in microlithography
    7.
    发明授权
    Methods and apparatus for detecting and correcting reticle deformations in microlithography 失效
    在微光刻中检测和校正掩模版变形的方法和装置

    公开(公告)号:US06835511B2

    公开(公告)日:2004-12-28

    申请号:US10132343

    申请日:2002-04-24

    IPC分类号: G03C500

    摘要: Microlithography methods and apparatus are disclosed that allow reticle deformations to be measured and corrected quickly and accurately. Multiple alignment marks (comprising a “first set” and “second set” of reticle-position-measurement marks) are formed on the reticle. A first set of reticle-deformation data is obtained by detecting the positions of at least some of the first set of reticle-position-measurement marks using an inspection device that is separate from the microlithography apparatus with which the reticle will be used for making lithographic exposures. The first set of reticle-deformation data is stored in a first memory. The reticle then is mounted in the microlithography apparatus, in which a second set of reticle-deformation data is obtained by detecting the positions of at least some of the second set of reticle-position-measurement marks. The second set of reticle-deformation data is stored in a second memory. Lithographic exposures are performed, using the reticle so measured, while correcting the respective positions and/or deformations of the respective subfields on the fly, according to both sets of reticle-deformation data recalled from the respective memories.

    摘要翻译: 公开了微光刻方法和装置,其允许标线变形被快速和准确地测量和校正。 在掩模版上形成多个对准标记(包括标线片位置测量标记的“第一组”和“第二组”)。 使用与使用光掩膜将用于制作光刻的微光刻设备分开的检查装置来检测第一组掩模版位置测量标记中的至少一些的位置来获得第一组掩模版变形数据 曝光。 第一组掩模版变形数据被存储在第一存储器中。 然后将掩模版安装在微光刻设备中,其中通过检测第二组掩模版位置测量标记中的至少一些的位置来获得第二组掩模版变形数据。 第二组掩模版变形数据存储在第二存储器中。 根据从各个存储器回忆的两组标线片变形数据,使用如此测量的掩模板,同时在飞行中校正各个子场的各个位置和/或变形,进行平版印刷曝光。

    Mask and exposure apparatus
    8.
    发明申请
    Mask and exposure apparatus 有权
    面膜和曝光装置

    公开(公告)号:US20070190433A1

    公开(公告)日:2007-08-16

    申请号:US11707003

    申请日:2007-02-16

    IPC分类号: A47G1/12 G03F1/14 G03F1/00

    摘要: An exposure apparatus transfers a pattern from a mask onto a sensitive substrate. A film protects the mask, and a film frame, between the mask and the film, holds the film spaced away from a surface of the mask. The film has a first transmittance for radiation of a necessary wavelength and has a second transmittance for radiation of an unnecessary wavelength; the first transmittance is higher than the second transmittance. The film might reflect or absorb the unnecessary wavelength. The necessary wavelength may be an exposure wavelength and may also be in the range of extreme ultra violet radiation. An atmosphere around the mask transitions from an air atmosphere to a reduced-pressure atmosphere, or from a reduced-pressure atmosphere to an air atmosphere, at a speed that allows a difference between a pressure applied to one surface of the film and a pressure applied to the other surface of the film to be held at a predetermined value or smaller.

    摘要翻译: 曝光装置将图案从掩模转印到敏感基板上。 胶片保护面罩和胶片框架之间的掩模和胶片之间,保持膜与掩模的表面间隔开。 该膜对于必需波长的辐射具有第一透射率,并且对于不需要的波长的辐射具有第二透射率; 第一透射率高于第二透射率。 这部电影可能反映或吸收不必要的波长。 所需的波长可以是曝光波长,并且也可以在极紫外辐射的范围内。 掩模周围的气氛从施加到膜的一个表面的压力和施加的压力之间的差异的速度从空气气氛转变到减压气氛,或从减压气氛转变到空气气氛 到要保持在预定值或更小的膜的另一表面。

    Apparatus and methods for mask/substrate alignment in charged-particle-beam pattern-transfer
    9.
    发明授权
    Apparatus and methods for mask/substrate alignment in charged-particle-beam pattern-transfer 失效
    带电粒子束图案转印中的掩模/基板对准的装置和方法

    公开(公告)号:US06965114B2

    公开(公告)日:2005-11-15

    申请号:US10227190

    申请日:2002-08-22

    摘要: Methods and apparatus for alignment of masks and wafers in charged-particle-beam (CPB) pattern-transfer use optical position sensors to determine the positions of a mask or a mask stage with respect to an axis of a CPB optical system. The optical position sensor uses optical reference marks provided on the mask or mask stage. Determination of the position of the mask of the mask stage permits a coarse alignment of the mask or the mask stage. CPB reference marks are provided on masks, mask stages, wafers, and wafer stages, permitting alignment of the mask stage or the mask with respect to the wafer stage or wafer, respectively, using the charged particle beam. The charged particle beam is scanned with respect to the wafer or wafer-stage CPB reference marks to determine a deflection corresponding to an alignment of the CPB reference marks of the mask and wafer (or mask stage and wafer stage). Use of the charged particle beam for such alignment permits a fine alignment.

    摘要翻译: 用于使带电粒子束(CPB)图案转印中的掩模和晶片对准的方法和装置使用光学位置传感器来确定掩模或掩模台相对于CPB光学系统的轴的位置。 光学位置传感器使用设在掩模或掩模台上的光学参考标记。 确定掩模台的掩模的位置允许掩模或掩模台的粗略对准。 CPB参考标记提供在掩模,掩模级,晶片和晶片级上,允许使用带电粒子束分别使掩模级或掩模相对于晶片级或晶片对准。 相对于晶片或晶片级CPB参考标记扫描带电粒子束,以确定对应于掩模和晶片(或掩模台和晶片台)的CPB参考标记的对准的偏转。 使用带电粒子束进行这种对准允许精细对准。

    Electrostatic reticle chucks, charged-particle-beam microlithography apparatus and methods, and semiconductor-device manufacturing methods comprising same
    10.
    发明授权
    Electrostatic reticle chucks, charged-particle-beam microlithography apparatus and methods, and semiconductor-device manufacturing methods comprising same 失效
    静电掩模板卡盘,带电粒子束微光刻设备和方法以及包括该静电掩模板的半导体器件制造方法

    公开(公告)号:US06433346B1

    公开(公告)日:2002-08-13

    申请号:US09560913

    申请日:2000-04-28

    IPC分类号: H01J3720

    CPC分类号: H01L21/6833

    摘要: Electrostatic reticle chucks are disclosed that provide strong reticle-holding force and that can be used in a subatmospheric-pressure environment as encountered in charged-particle-beam microlithography. The chucks are suited especially for holding reticles made from a silicon reticle substrate. The attractive force is established between a reticle-contacting surface of the chuck comprising a dielectric material, and the reticle. Depthwise beneath the dielectric material is at least one electrode. The dielectric material has a property such that, when the electrode is energized, the reticle is attracted to the reticle-contacting surface by a Johnsen-Rahbek force. To such end, by way of example, the dielectric material has a volume resistivity of no greater than 1013 &OHgr;-cm. The Johnsen-Rahbek force holds the reticle much more strongly than the Coulomb force produced by conventional reticle chucks.

    摘要翻译: 公开了静电掩模版卡盘,其提供强的掩模版保持力,并且可以在带电粒子束微光刻中遇到的低于大气压的环境中使用。 卡盘特别适用于保持由硅掩模版基板制成的掩模版。 在包含电介质材料的卡盘的掩模版接触表面与掩模版之间建立了吸引力。 介电材料下方的深度是至少一个电极。 电介质材料具有这样的性质:当电极通电时,通过Johnsen-Rahbek力将掩模版吸引到掩模版接触表面。 为此,作为示例,介电材料具有不大于1013欧姆 - 厘米的体积电阻率。 约翰森拉赫比克力量比传统掩模板卡盘产生的库仑力更强烈。