公开(公告)号：US08308962B2

公开(公告)日：2012-11-13

申请号：US12210010

申请日：2008-09-12

申请人： Philip Floyd ,  Chok Ho ,  Teruo Sasagawa ,  Xiaoming Yan

发明人： Philip Floyd ,  Chok Ho ,  Teruo Sasagawa ,  Xiaoming Yan

IPC分类号： H01B13/00

CPC分类号： H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

公开(公告)号：US20090074646A1

公开(公告)日：2009-03-19

申请号：US12210138

申请日：2008-09-12

申请人： Teruo Sasagawa ,  Xiaoming Yan

发明人： Teruo Sasagawa ,  Xiaoming Yan

IPC分类号： C01B21/06 ,  B44C1/22 ,  C01B21/083 ,  C01B33/08 ,  C01B33/113 ,  C01B33/00 ,  C23F1/08

CPC分类号： H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

公开(公告)号：US20090071933A1

公开(公告)日：2009-03-19

申请号：US12210026

申请日：2008-09-12

申请人： Philip Floyd ,  Evgeni Gousev ,  David Heald ,  Ben Ward Hertzler ,  Chok Ho ,  Teruo Sasagawa ,  Xiaoming Yan ,  Todd Lyle Zion

发明人： Philip Floyd ,  Evgeni Gousev ,  David Heald ,  Ben Ward Hertzler ,  Chok Ho ,  Teruo Sasagawa ,  Xiaoming Yan ,  Todd Lyle Zion

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

摘要翻译： 可以以各种方式增加蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。 未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。 蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。 蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。 蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

公开(公告)号：US20090071932A1

公开(公告)日：2009-03-19

申请号：US12210010

申请日：2008-09-12

申请人： Philip Floyd ,  Chok Ho ,  Teruo Sasagawa ,  Xiaoming Yan

发明人： Philip Floyd ,  Chok Ho ,  Teruo Sasagawa ,  Xiaoming Yan

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

公开(公告)号：US08323516B2

公开(公告)日：2012-12-04

申请号：US12210042

申请日：2008-09-12

申请人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

发明人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

IPC分类号： H01B13/00

CPC分类号： H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

摘要翻译： 可以以各种方式增加蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。 未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。 蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。 蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。 蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

公开(公告)号：US20090101623A1

公开(公告)日：2009-04-23

申请号：US12210042

申请日：2008-09-12

申请人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

发明人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

IPC分类号： C23F1/00

CPC分类号： H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

公开(公告)号：US20110051224A1

公开(公告)日：2011-03-03

申请号：US12939909

申请日：2010-11-04

申请人： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

发明人： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

IPC分类号： G02B26/00

CPC分类号： B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

摘要： Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

摘要翻译： 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。

公开(公告)号：US20090305010A1

公开(公告)日：2009-12-10

申请号：US12133813

申请日：2008-06-05

申请人： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

发明人： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

IPC分类号： B05D5/06 ,  H05H1/24 ,  B32B3/00

CPC分类号： B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

摘要： Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

摘要翻译： 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。

公开(公告)号：US08358458B2

公开(公告)日：2013-01-22

申请号：US12939909

申请日：2010-11-04

申请人： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

发明人： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

IPC分类号： G02B26/00

CPC分类号： B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

摘要： Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

摘要翻译： 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。

公开(公告)号：US20120057216A1

公开(公告)日：2012-03-08

申请号：US12680550

申请日：2007-09-28

申请人： Lucio Flores ,  Lior Kogut ,  Xiaoming Yan ,  Thanh Tu ,  Qi Luo ,  Brian J. Gally ,  Dana Chase ,  Gang Xu ,  Sheng-Tzung Huang ,  Chia Wei Yang ,  Yi Fan Su

发明人： Lucio Flores ,  Lior Kogut ,  Xiaoming Yan ,  Thanh Tu ,  Qi Luo ,  Brian J. Gally ,  Dana Chase ,  Gang Xu ,  Sheng-Tzung Huang ,  Chia Wei Yang ,  Yi Fan Su

IPC分类号： G02B26/00 ,  C23F1/02

CPC分类号： B81C1/00476 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0142

摘要： A MEMS comprising a sacrificial structure, which comprises a faster etching portion and a slower etching portion, exhibits reduced damage to structural features when in forming a cavity in the MEMS by etching away the sacrificial structure. The differential etching rates mechanically decouple structural layers, thereby reducing stresses in the device during the etching process. Methods and systems are also provided.

摘要翻译： 包括较快蚀刻部分和较慢蚀刻部分的牺牲结构的MEMS在通过蚀刻掉牺牲结构而在MEMS中形成空腔时表现出对结构特征的减小的损害。 差分蚀刻速率机械地去耦合结构层，从而在蚀刻过程中减少器件中的应力。 还提供了方法和系统。