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    Polishing pad and semiconductor device manufacturing method
    1.
    发明授权
    Polishing pad and semiconductor device manufacturing method 有权
    抛光垫和半导体器件的制造方法

    公开(公告)号：US07731568B2

    公开(公告)日：2010-06-08

    申请号：US10598717

    申请日：2004-10-20

    申请人： Tetsuo Shimomura ,  Masahiko Nakamori ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    发明人： Tetsuo Shimomura ,  Masahiko Nakamori ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    IPC分类号： B24B7/00 ,  B24B7/19 ,  B24B5/00 ,  B24B29/00 ,  B24D11/00

    CPC分类号： B24B37/205 ,  H01L21/30625

    摘要： The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference ΔT (ΔT=T0−T1) (%) between T0 and T1 is within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein T1 is the light transmittance (%) of the light-transmitting region measured at the measurement wavelength λ after dipping for 24 hours in a KOH aqueous solution at pH 11 or an H2O2 aqueous solution at pH 4 and T0 is the light-transmittance (%) measured at the measurement wavelength λ before the dipping.

    摘要翻译： 本发明的目的是提供一种抛光垫，即使在用碱性或酸性浆料进行研磨的同时，也能够在从使用开始到使用结束的长时间内保持高精度的端点光学检测 作为使用该研磨垫的半导体装置的制造方法。 本发明的抛光垫用于化学机械抛光，并具有抛光区域和透光区域，其中透光区域满足以下区别：Dgr; T（＆Dgr; T = T0-T1）（％） T0和T1在400〜700nm的测量波长的整个范围内在10（％）以内，其中T1是在浸渍24小时后在测量波长λ测量的透光区域的透光率（％） pH为11的KOH水溶液或pH4的H 2 O 2水溶液，T0为在浸渍前测定的波长λ下测定的透光率（％）。

    POLISHING PAD
    2.
    发明申请
    POLISHING PAD 有权
    抛光垫

    公开(公告)号：US20090253353A1

    公开(公告)日：2009-10-08

    申请号：US11720964

    申请日：2005-12-08

    申请人： Kazuyuki Ogawa ,  Tetsuo Shimomura ,  Atsushi Kazuno ,  Yoshiyuki Nakai ,  Masahiro Watanabe ,  Takatoshi Yamada ,  Masahiko Nakamori

    发明人： Kazuyuki Ogawa ,  Tetsuo Shimomura ,  Atsushi Kazuno ,  Yoshiyuki Nakai ,  Masahiro Watanabe ,  Takatoshi Yamada ,  Masahiko Nakamori

    IPC分类号： B24B37/04 ,  B24B1/00 ,  B29C65/70 ,  B32B37/00 ,  B32B3/10

    CPC分类号： B24B37/205 ,  Y10T428/24339 ,  Y10T428/24992

    摘要： It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).

    摘要翻译： 本发明的目的是提供一种抛光垫，其能够在抛光过程中对端点进行高精度光学检测，并且即使在抛光垫之后也可防止在使用期间抛光区域和透光区域之间的浆料泄漏 已被使用了很长时间。 本发明的第二个目的是提供一种能够抑制抛光特性（例如面内均匀性）劣化的抛光垫以及由于抛光区域和透光区域的行为差异而产生的划痕 抛光。 本发明的第三个目的是提供一种具有抛光区域和特定金属浓度等于或低于特定值（阈值）的透光区域的抛光垫。

    Polishing pad
    3.
    发明授权
    Polishing pad 有权
    抛光垫

    公开(公告)号：US07871309B2

    公开(公告)日：2011-01-18

    申请号：US11720964

    申请日：2005-12-08

    申请人： Kazuyuki Ogawa ,  Tetsuo Shimomura ,  Atsushi Kazuno ,  Yoshiyuki Nakai ,  Masahiro Watanabe ,  Takatoshi Yamada ,  Masahiko Nakamori

    发明人： Kazuyuki Ogawa ,  Tetsuo Shimomura ,  Atsushi Kazuno ,  Yoshiyuki Nakai ,  Masahiro Watanabe ,  Takatoshi Yamada ,  Masahiko Nakamori

    IPC分类号： B24B1/00 ,  B24D11/00

    CPC分类号： B24B37/205 ,  Y10T428/24339 ,  Y10T428/24992

    摘要： It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).

    摘要翻译： 本发明的目的是提供一种抛光垫，其能够在抛光过程中对端点进行高精度光学检测，并且即使在抛光垫之后也可防止在使用期间抛光区域和透光区域之间的浆料泄漏 已被使用了很长时间。 本发明的第二个目的是提供一种能够抑制抛光特性（例如面内均匀性）劣化的抛光垫以及由于抛光区域和透光区域的行为差异而产生的划痕 抛光。 本发明的第三个目的是提供一种具有抛光区域和特定金属浓度等于或低于特定值（阈值）的透光区域的抛光垫。

    Polishing pad and method of producing semiconductor device
    4.
    发明授权
    Polishing pad and method of producing semiconductor device 有权
    抛光垫及半导体装置的制造方法

    公开(公告)号：US08845852B2

    公开(公告)日：2014-09-30

    申请号：US10536621

    申请日：2003-11-27

    申请人： Masahiko Nakamori ,  Tetsuo Shimomura ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    发明人： Masahiko Nakamori ,  Tetsuo Shimomura ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    IPC分类号： C23F1/00 ,  B24B37/20 ,  B24B37/013

    CPC分类号： B24B37/205 ,  B24B37/013

    摘要： A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.

    摘要翻译： 公开了一种抛光垫，其能够在抛光过程中进行高精度的光学终点感测，因此具有优异的抛光特性（例如表面均匀性和面内均匀性）。 还公开了能够获得大面积晶片的抛光轮廓的抛光垫。 第一发明的抛光垫包括在400〜700nm的波长范围内具有不小于50％透射率的透光区域。 第二发明的抛光垫包括在600至700nm的波长范围内具有0.5至4mm厚度的透光区域和不小于80％的透光率。 第三发明的抛光垫包括布置在抛光垫的中心部分和周边部分之间的透光区域，其沿直径方向的长度（D）比长度（L）长三倍或更长， 在圆周方向。

    Polishing pad and semiconductor device manufacturing method
    5.
    发明申请
    Polishing pad and semiconductor device manufacturing method 有权
    抛光垫和半导体器件的制造方法

    公开(公告)号：US20070190905A1

    公开(公告)日：2007-08-16

    申请号：US10598717

    申请日：2004-10-20

    申请人： Tetsuo Shimomura ,  Masahiko Nakamori ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    发明人： Tetsuo Shimomura ,  Masahiko Nakamori ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    IPC分类号： B24B1/00 ,  H01L21/461 ,  H01L21/302

    CPC分类号： B24B37/205 ,  H01L21/30625

    摘要： The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference ΔT (ΔT=T0−T1) (%) between T0 and T1 is within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein T1 is the light transmittance (%) of the light-transmitting region measured at the measurement wavelength λ after dipping for 24 hours in a KOH aqueous solution at pH 11 or an H2O2 aqueous solution at pH 4 and T0 is the light-transmittance (%) measured at the measurement wavelength λ before the dipping.

    摘要翻译： 本发明的目的是提供一种抛光垫，即使在用碱性或酸性浆料进行研磨的同时，也能够在从使用开始到使用结束的长时间内保持高精度的端点光学检测 作为使用该研磨垫的半导体装置的制造方法。 本发明的抛光垫用于化学机械抛光，并具有抛光区域和透光区域，其中透光区域满足差值DeltaT（ΔT= T 0 -T < 在0至100nm的测量波长的整个范围内，T 0和T 1之间的平均值（％）在10（％）以内 其中T 1是在pH 11或KOH 2的KOH水溶液中浸渍24小时后在测量波长λ下测量的透光区的透光率（％） 在pH 4和T 0 <0> 2水溶液中的透光率（％）是在浸渍之前在测量波长λ下测量的。