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    Polyprenyl compounds and method of producing the same
    2.
    发明授权
    Polyprenyl compounds and method of producing the same 失效
    聚丙烯基化合物及其制备方法

    公开(公告)号：US4564477A

    公开(公告)日：1986-01-14

    申请号：US467253

    申请日：1983-02-17

    申请人： Tetsuo Takigawa ,  Koichi Ibata ,  Masafumi Okada ,  Masao Mizuno ,  Takashi Nishida

    发明人： Tetsuo Takigawa ,  Koichi Ibata ,  Masafumi Okada ,  Masao Mizuno ,  Takashi Nishida

    IPC分类号： C07C29/14 ,  C07C29/147 ,  C07C45/29 ,  C07C45/30 ,  C07C45/59 ,  C07C45/67 ,  C07C47/21 ,  C07C49/203 ,  C07C57/03 ,  C07C69/587 ,  C07D295/02 ,  C07D295/03 ,  C07D295/185 ,  C09F5/00

    CPC分类号： C07D295/185 ,  C07C255/00 ,  C07C29/14 ,  C07C29/147 ,  C07C45/292 ,  C07C45/298 ,  C07C45/305 ,  C07C45/59 ,  C07C45/676 ,  C07C47/21 ,  C07C49/203 ,  C07C57/03 ,  C07D295/03

    摘要： There are provided polyprenyl compounds of the formula ##STR1## wherein ##STR2## represent a trans-isoprene unit and a cis-isoprene unit, respectively, n is an integer of 11-19, Z.sup.1 and Z.sup.2 combinedly represent .dbd.O, .dbd.CH--COOH,.dbd.CH--COOR.sup.1, .dbd.CH--CN, .dbd.C(CN)COOR.sup.2, .dbd.CH--CO--NH.sub.2, .dbd.CH--CO--N(R.sup.3) (R.sup.4), .dbd.CH--CO--NHR.sup.5, .dbd.CH--CH.sub.2 --N(R.sup.3) (R.sup.4), .dbd.CH--CH.sub.2 --NHR.sup.5 or .dbd.CH--CHO or Z.sup.1 is a hydrogen atom and Z.sup.2 is --CH.sub.2 COOH, --CH.sub.2 COOR.sup.6, --CH(CN)COOR.sup.2, --CH.sub.2 CN, --CH.sub.2 --CO--NH.sub.2, --CH.dbd.CH--N(R.sup.3) (R.sup.4) or --CH.sub.2 --CH.dbd.N--R.sup.5, R.sup.1, R.sup.2 and R.sup.6 each being a lower alkyl group, R.sup.3 and R.sup.4 each independently being a lower-alkyl, cycloalkyl, aryl or aralkyl group or R.sup.3 and R.sup.4 combinedly representing an alkylene group containing 2-5 carbon atoms, and R.sup.5 being a lower-alkyl, cycloalkyl, aryl or aralkyl group. These polyprenyl compounds can be synthesized starting with a polyprenol obtainable from leaves of a plant such as Ginkgo biloba or Cedrus deodara by extraction and as necessary followed by hydrolysis, or a reactive derivative thereof. The polyprenyl compounds are useful as intermediates for the synthesis of dolichol without the use of an expensive C.sub.5 chain extender.

    摘要翻译： 提供下式的聚异戊二烯基化合物：其中，“IMAGE”分别代表异戊二烯单元和顺式异戊二烯单元，n为11-19的整数，Z1和Z2组合表示 = CH 2 COOR 1 = CH-COOR 1 = CH-CN = C（CN）COOR 2 = CH-CO-NH 2 = CH-CO-N（R3）（R4） NHR 5，= CH-CH 2 -N（R 3）（R 4），= CH-CH 2 -NHR 5或= CH-CHO或Z 1是氢原子，Z 2是-CH 2 COOH，-CH 2 COOR 6，-CH（CN）COOR 2，-CH 2 CN ，-CH 2 -CO-NH 2，-CH = CH-N（R 3）（R 4）或-CH 2 -CH = N-R 5，R 1，R 2和R 6各自为低级烷基，R 3和R 4各自独立地为低级 - 烷基，环烷基，芳基或芳烷基或R3和R4组合表示含2-5个碳原子的亚烷基，R5为低级烷基，环烷基，芳基或芳烷基。 这些聚异戊二烯基化合物可以从通过提取从植物如银杏叶或Cedrus deodara的叶获得的聚异戊二烯开始合成，并且根据需要随后进行水解或其活性衍生物合成。 聚异戊二烯基化合物可用作合成Dolichol而不使用昂贵的C5扩链剂的中间体。

    Platinum containing pullulan derivatives and pharmaceutical compositions comprising the same
    7.
    发明授权
    Platinum containing pullulan derivatives and pharmaceutical compositions comprising the same 失效
    含铂的支链淀粉衍生物和包含其的药物组合物

    公开(公告)号：US5100877A

    公开(公告)日：1992-03-31

    申请号：US282398

    申请日：1988-12-05

    申请人： Fumio Mori ,  Masafumi Okada ,  Shuji Miki ,  Iwao Ebashi ,  Takashi Nishida ,  Kouichiro Kawai ,  Tazuko Tashiro ,  Shigeru Tsukagoshi

    发明人： Fumio Mori ,  Masafumi Okada ,  Shuji Miki ,  Iwao Ebashi ,  Takashi Nishida ,  Kouichiro Kawai ,  Tazuko Tashiro ,  Shigeru Tsukagoshi

    IPC分类号： C08B37/00

    CPC分类号： C08B37/0018 ,  Y10S514/908

    摘要： A pullulan derivative having one or more active sites resulting from introduction of sulfuric acid, phosphoric acid, a sulfonic acid or a carboxylic acid, wherein one hydrogen atom of the group of the formula ##STR1## occurring at said active sites is partly substituted by a group of the general formula ##STR2## wherein L.sup.1 and L.sup.2 each independently is amine or a unidentate ligand amine or combinedly represent a bidentate ligand amine and Y is an anionic ligand, and/or two hydrogen atoms of the group ##STR3## groups bound to one and the same carbon atom or to two neighboring carbon atoms as occurring at said active sites are, each independently, partly substituted by a group of the general formula ##STR4## wherein L.sup.1 and L.sup.2 are as defined above, and a pharmacologically acceptable salt thereof.The above compound has anticancer activity and is useful as anticancer agents.The present invention is concerned with said compound, a process for producing the same and a pharmaceutical use thereof.

    摘要翻译： 具有由引入硫酸，磷酸，磺酸或羧酸产生的一个或多个活性位点的支链淀粉衍生物，其中在所述活性位点发生的式“IMAGE”基团的一个氢原子部分被 通式为“IMAGE”的基团，其中L1和L2各自独立地为胺或一元配体胺，或者组合表示二齿配体胺，Y为阴离子配位体，和/或组中的两个氢原子结合至 在所述活性位点处发生的同一个碳原子或两个相邻的碳原子各自独立地部分地被通式“IMAGE”所示的基团取代，其中L1和L2如上所定义，及其药理学上可接受的盐 。 上述化合物具有抗癌活性，可用作抗癌剂。 本发明涉及所述化合物，其制备方法及其药物用途。

    Semiconductor device and manufacturing method thereof
    9.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07776495B2

    公开(公告)日：2010-08-17

    申请号：US11725507

    申请日：2007-03-20

    申请人： Masahito Hiroshima ,  Takashi Nishida

    发明人： Masahito Hiroshima ,  Takashi Nishida

    IPC分类号： G03F7/00

    CPC分类号： H01L28/91 ,  G03F1/00 ,  H01L27/10808 ,  H01L27/10852

    摘要： A semiconductor device and a manufacturing method thereof in which the peripheral length of an aperture and the mechanical strength of cylinders in a cell can be increased without changing the occupation rate of patterns in the cell. By forming a slit in the middle of each mask pattern so as not to expose parts of wafer, the aperture of the wafer becomes nearly cocoon-shaped with a constriction in the middle. Thereby, the peripheral length of the aperture can be increased without changing the occupation rate of the mask patterns in a cell. Further, the shape of the bottom of the aperture also becomes nearly cocoon-shaped with a constriction in the middle, and therefore it is possible to increase the mechanical strength of cylinders.

    摘要翻译： 一种半导体器件及其制造方法，其中可以增加孔的圆周长度和单元中气缸的机械强度，而不改变单元中图案的占用率。 通过在每个掩模图案的中间形成狭缝以不暴露晶片的一部分，晶片的孔径在中间收缩而变为几乎茧形。 因此，可以增加孔径的周长，而不改变单元中的掩模图案的占有率。 此外，孔的底部的形状也变得几乎茧形，中间有收缩，因此可以提高气缸的机械强度。

    Semiconductor device and manufacturing method thereof
    10.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07208788B2

    公开(公告)日：2007-04-24

    申请号：US10995134

    申请日：2004-11-24

    申请人： Masahito Hiroshima ,  Takashi Nishida

    发明人： Masahito Hiroshima ,  Takashi Nishida

    IPC分类号： H01L29/73

    CPC分类号： H01L28/91 ,  G03F1/00 ,  H01L27/10808 ,  H01L27/10852

    摘要： A semiconductor device and a manufacturing method thereof in which the peripheral length of an aperture and the mechanical strength of cylinders in a cell can be increased without changing the occupation rate of patterns in the cell. By forming a slit in the middle of each mask pattern so as not to expose parts of wafer, the aperture of the wafer becomes nearly cocoon-shaped with a constriction in the middle. Thereby, the peripheral length of the aperture can be increased without changing the occupation rate of the mask patterns in a cell. Further, the shape of the bottom of the aperture also becomes nearly cocoon-shaped with a constriction in the middle, and therefore it is possible to increase the mechanical strength of cylinders.

    摘要翻译： 一种半导体器件及其制造方法，其中可以增加孔的圆周长度和单元中气缸的机械强度，而不改变单元中图案的占用率。 通过在每个掩模图案的中间形成狭缝以不暴露晶片的一部分，晶片的孔径在中间收缩而变为几乎茧形。 因此，可以增加孔径的周长，而不改变单元中的掩模图案的占有率。 此外，孔的底部的形状也变得几乎茧形，中间有收缩，因此可以提高气缸的机械强度。