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公开(公告)号：US4034396A
公开(公告)日：1977-07-05
申请号：US579848
申请日：1975-05-22
申请人： Tetsuro Nakamura , Hideaki Suzuki
发明人： Tetsuro Nakamura , Hideaki Suzuki
IPC分类号： H01L31/10 , H01L31/103 , H01L31/108 , H01L27/14
CPC分类号： H01L31/108 , H01L31/1035
摘要： A light sensor includes a body of semiconductor material having an energy gap within the range of between 1.65 eV and 2.0 eV and a main surface. A rectifying junction is formed in the body of semiconductor material at a depth of at most 1.5 microns beneath the main surface. The semiconductor material of such a device is preferably selected from a group of materials consisting of Ga As.sub.1.sub.-x P.sub.x with a value of x in the range between 0.20 and 0.52 and Ga.sub.1.sub.-x Al.sub.x As having a value of x in the range between 0.20 and 0.68.
摘要翻译： 光传感器包括具有在1.65eV和2.0eV之间的能隙的主要表面的半导体材料体。 在半导体材料体内在主表面下方深度最多1.5微米处形成整流结。 这种器件的半导体材料优选选自由Ga As 1-x P x组成的一组材料，其值x在0.20和0.52之间，Ga 1-x Al x As的值x在0.20 和0.68。
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公开(公告)号：US06835888B2
公开(公告)日：2004-12-28
申请号：US10422171
申请日：2003-04-23
申请人： Masafumi Sano , Tetsuro Nakamura
发明人： Masafumi Sano , Tetsuro Nakamura
IPC分类号： H01L31075
CPC分类号： H01L31/076 , H01L31/1816 , H01L31/1824 , H01L31/202 , H01L31/206 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon non-single crystal semiconductors. An amorphous silicon layer is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon layer is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon layer is used as the i-type layer of a third p-i-n junction, the first to third layers being in order from the light incident side. In this way, a stacked photovoltaic device can be provided which is practical and low-cost and yet has high reliability and high photoelectric conversion efficiency.
摘要翻译： 层叠的光伏器件包括叠层的至少三个p-i-n结构成器件，每个具有由非硅单晶半导体形成的p型层，i型层和n型层。 非晶硅层用作第一pin结的i型层，微晶硅层用作第二pin结的i型层，微晶硅层用作i型层 第三针结，第一至第三层从光入射侧依次排列。 以这种方式，可以提供实用且低成本但具有高可靠性和高光电转换效率的叠层光伏器件。
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3.发明授权Direct-contact type image sensor device, an image sensor unit, and methods for producing the same 失效直接接触型图像传感器装置，图像传感器单元及其制造方法
公开(公告)号：US5477047A
公开(公告)日：1995-12-19
申请号：US141328
申请日：1993-10-21
CPC分类号： H04N1/0316 , H04N1/0313
摘要： A direct-contact type image sensor device according to the present invention includes: a light-transmitting substrate having an upper surface and a lower surface; a patterned conductor layer formed over the upper surface of the light-transmitting substrate; a transparent electrically conductive layer formed on the lower surface of the light-transmitting substrate; an image sensor chip mounted face-down on the upper surface of the light-transmitting substrate, with an insulating resin layer being interposed between the image sensor chip and the upper surface of the light-transmitting substrate, the image sensor chip being mounted by a flip-chip-bonding method, a light-interrupting layer provided between the patterned conductor layer and the upper surface of the light-transmitting substrate; and a light-interrupting portion for interrupting a portion of a light beam, the light beam being radiated on an original through the light-transmitting substrate by a light source disposed above the light-transmitting substrate. The image sensor chip and the light-interrupting portion serve as an optical throttle for the light beam.
摘要翻译： 根据本发明的直接接触型图像传感器装置包括：具有上表面和下表面的透光基底; 形成在所述透光基板的上表面上的图案化导体层; 形成在所述透光基板的下表面上的透明导电层; 图像传感器芯片，其面向下安装在透光基板的上表面上，绝缘树脂层插入在图像传感器芯片和透光基板的上表面之间，图像传感器芯片由 倒装芯片接合方法，设置在图案化导体层和透光基板的上表面之间的遮光层; 以及用于中断光束的一部分的遮光部，通过透光基板通过设置在透光基板上方的光源将光束照射在原稿上。 图像传感器芯片和遮光部分用作光束的光学节流阀。
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4.发明授权Direct-contact type image sensor using optical fiber array with light absorbing cladding 失效直接接触式图像传感器，采用光吸收包层光纤阵列
公开(公告)号：US5448055A
公开(公告)日：1995-09-05
申请号：US161123
申请日：1993-12-02
申请人： Tetsuro Nakamura , Eiji Kawamoto , Shinji Fujiwara
发明人： Tetsuro Nakamura , Eiji Kawamoto , Shinji Fujiwara
CPC分类号： H04N1/0312 , G02B6/08 , H04N1/0311 , H04N1/0315
摘要： The present invention provides a direct-contact type image sensor device in which an image sensor chip having electrodes and a photosensitive element array is mounted on an optical fiber array plate by a flip-chip-bonding method. The optical fiber array plate includes a first opaque substrate, a second opaque substrate, an optical fiber array formed by arranging a plurality of optical fibers, and a transparent member disposed in contact with a side face of the optical fiber array, the optical fiber array and the transparent member being interposed between the first and second opaque substrates. Each of the plurality of optical fibers includes a center core, a clad provided on an outer surface of the core, and a light absorbing layer provided on an outer surface of the clad. The image sensor chip is provided in such a way that the photosensitive element array is disposed along an upper end of the optical fiber array and in a portion of the optical fiber array plate except the transparent member, the transparent member forming a slit for transmitting light.
摘要翻译： 本发明提供一种直接接触型图像传感器装置，其中具有电极和感光元件阵列的图像传感器芯片通过倒装芯片接合方法安装在光纤阵列板上。 光纤阵列板包括：第一不透明基板，第二不透明基板，通过布置多根光纤形成的光纤阵列;以及与光纤阵列的侧面接触设置的透明部件，所述光纤阵列 并且所述透明构件插入在所述第一和第二不透明基板之间。 多个光纤中的每一个包括中心芯，设置在芯的外表面上的包层以及设置在包层的外表面上的光吸收层。 图像传感器芯片以这样的方式设置，使得光敏元件阵列沿着光纤阵列的上端布置，并且在除了透明构件之外的光纤阵列板的一部分中，透明构件形成用于透射光的狭缝 。
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公开(公告)号：US5266828A
公开(公告)日：1993-11-30
申请号：US884826
申请日：1992-05-18
CPC分类号： H04N1/0312 , G02B6/4249 , H01L27/14618 , H01L27/14625 , H04N1/0311 , H04N1/0316 , H01L2224/16 , H01L2924/01014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041
摘要： This invention relates to an image sensor with photo sensors (13). An object thereof is to simplify mounting operation of an image sensor chip (12) provided with the photo sensors (13). In order to accomplish this object, according to this invention, the photo sensors (13) and electrodes (15) are disposed on the underside of the image sensor chip (12). The image sensor chip (12) is bonded to the upper side of a transparent substrate (18) by means of a transparent photo-setting type insulating resin (16), so that the electrodes (15) come into contact with circuit conductor layers (17) disposed on the upper side of the transparent substrate (18). With the above-mentioned construction, since fine metal wire (75) by which the electrodes (15) and the circuit conductor layers (17) are connected to each other is not required, mounting operation can be simplified.
摘要翻译： 本发明涉及具有光传感器（13）的图像传感器。 其目的在于简化设置有光传感器（13）的图像传感器芯片（12）的安装操作。 为了实现该目的，根据本发明，光传感器（13）和电极（15）设置在图像传感器芯片（12）的下侧。 图像传感器芯片12通过透明光固定型绝缘树脂16与透明基板18的上侧接合，使得电极15与电路导体层（ 17）设置在透明基板（18）的上侧。 利用上述结构，由于不需要将电极（15）和电路导体层（17）彼此连接的细金属线（75），因此可以简化安装操作。
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6.发明授权Method for producing image sensors with current flow into chip and with simplified chip mounting 失效用于生产图像传感器的方法，电流流入芯片并具有简化的芯片安装
公开(公告)号：US5138145A
公开(公告)日：1992-08-11
申请号：US739562
申请日：1991-08-21
CPC分类号： H04N1/0312 , G02B6/4249 , H01L27/14618 , H01L27/14683 , H04N1/0311 , H04N1/0316 , H01L2224/16 , H01L2924/01014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041
摘要： Methods for the production of image sensors having simplified chip mounting are provided which comprise disposing a photo-setting type insulating resin on the upper side of a substrate, a portion of the substrate being transparent and having circuit conductor layers on its upper side; bringing an image sensor chip, the underside of which has electrodes, into contact with the upper side of the substrate so that the photo-setting type resin is wedged away and the electrodes come into contact with the corresponding circuit conductor layers; flowing current into the image sensor chip through the circuit conductor layers to determine that the image sensor chip operates in a normal manner; and irradiating the photo-setting type resin with light so that the resin is hardened.
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7.发明授权Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element 有权有机电致发光元件和使用该元件的曝光单元和图像形成装置公开(公告)号：US07158161B2
公开(公告)日：2007-01-02
申请号：US10665011
申请日：2003-09-22
申请人： Akira Gyoutoku , Takafumi Hamano , Yuji Toyomura , Tetsuro Nakamura , Kenichi Masumoto , Shinya Yamamoto
发明人： Akira Gyoutoku , Takafumi Hamano , Yuji Toyomura , Tetsuro Nakamura , Kenichi Masumoto , Shinya Yamamoto
CPC分类号： H01L51/5278 , H01L51/56
摘要： Providing an exposure unit using an organic electroluminescence element with a large emitted light quantity.The organic electroluminescence element has, on a substrate 31, an anode 32 acting as a hole injection electrode, a cathode 33 acting as an electron injection electrode, a first and second emission layers 34 and 35 each having a light emission region, and a charge generation layer 38 injecting electrons into the light emission layer 34 lying close to the anode 32 and injecting holes into the light emission layer 35 lying close to the cathode 33, these layers being arranged between the anode 32 and the cathode 33.
摘要翻译： 使用发射光量大的有机电致发光元件提供曝光单元。 有机电致发光元件在基板31上具有充当空穴注入电极的阳极32，充当电子注入电极的阴极33，具有发光区域的第一发光层34及第二发光层35， 产生层38将电子注入位于靠近阳极32的发光层34中，并且将空穴注入位于靠近阴极33的发光层35中，这些层布置在阳极32和阴极33之间。
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8.发明申请Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element 有权有机电致发光元件和使用该元件的曝光单元和图像形成装置公开(公告)号：US20050248267A1
公开(公告)日：2005-11-10
申请号：US10665011
申请日：2003-09-22
申请人： Akira Gyoutoku , Takafumi Hamano , Yuji Toyomura , Tetsuro Nakamura , Kenichi Masumoto , Shinya Yamamoto
发明人： Akira Gyoutoku , Takafumi Hamano , Yuji Toyomura , Tetsuro Nakamura , Kenichi Masumoto , Shinya Yamamoto
CPC分类号： H01L51/5278 , H01L51/56
摘要： The invention has an object of providing an organic electroluminescence element with a large emitted light quantity, an exposure unit and an image-forming apparatus both using the element. The organic electroluminescence element in accordance with the invention has, on a substrate, an anode acting as a hole injection electrode, a cathode acting as an electron injection electrode, a plurality of light emission layers each having a light emission region and a charge generation layer injecting electrons into the light emission layer lying close to the anode and injecting holes into the light emission layer lying close to the cathode, these layers being arranged between the anode and the cathode, and is configured so that the work function of the charge generation layer is set higher than the ionization potential of the light emission layer lying close to the anode.
摘要翻译： 本发明的目的是提供一种具有大的发光量的有机电致发光元件，曝光单元和使用该元件的图像形成装置。 根据本发明的有机电致发光元件在基板上具有作为空穴注入电极的阳极，作为电子注入电极的阴极，具有发光区域和电荷产生层的多个发光层 将电子注入位于靠近阳极的发光层中，并将空穴注入靠近阴极的发光层，这些层布置在阳极和阴极之间，并且被配置为使得电荷产生层的功函数 被设定为高于靠近阳极的发光层的电离电位。
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公开(公告)号：US20050028860A1
公开(公告)日：2005-02-10
申请号：US10935173
申请日：2004-09-08
申请人： Masafumi Sano , Tetsuro Nakamura
发明人： Masafumi Sano , Tetsuro Nakamura
IPC分类号： H01L31/04 , H01L31/076 , H01L31/18 , H01L31/20 , H01L31/00
CPC分类号： H01L31/076 , H01L31/1816 , H01L31/1824 , H01L31/202 , H01L31/206 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： [Problem(s)] A stacked photovoltaic device can be provided which is practicable and low-cost and yet has a high reliability, and also has a high photoelectric conversion efficiency. [Means for Solving the Problem] A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon type non-single-crystal semiconductors. An amorphous silicon is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon is used as the i-type layer of a third p-i-n junction, the first to third layers being in the order from the light-incident side.
摘要翻译： [问题]可以提供切实可行且成本低并且具有高可靠性并且还具有高光电转换效率的叠层光伏器件。 解决问题的手段堆叠式光伏器件包括层叠的至少三个pin结构成器件，每个具有由硅型非晶硅层形成的p型层，i型层和n型层， 单晶半导体。 非晶硅用作第一pin结的i型层，微晶硅用作第二pin结的i型层，微晶硅用作第三pin结的i型层 第一至第三层的顺序为光入射侧。
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公开(公告)号：US06351594B1
公开(公告)日：2002-02-26
申请号：US09034761
申请日：1998-03-04
IPC分类号： F21V800
CPC分类号： G02B27/0031 , G02B6/0001 , Y10S385/901
摘要： The present invention relates to a linear beam irradiator, more specifically to a linear beam irradiator for using light conductor, comprising a light conductor having light permeability, a light refraction & reflection area 2 provided on one side face in the longitudinal direction of said light conductor, and a light source 8 provided in a way to cover the light refraction & reflection area 2, as well as a light source disposed at one end or both ends of said light conductor. This construction makes it possible to irradiate a linear light beam from the other side face of the light conductor corresponding to said light refraction & reflection area 2. With this construction, it becomes possible to reduce the deviation of illuminance of said linear light beam, sharply improve the transmission efficiency of light and greatly reduce the number of LED chips disposed at the light source. Moreover, this also enables a cost reduction.
摘要翻译： 线性光束照射装置技术领域本发明涉及一种直线光束照射装置，更具体地涉及一种使用光导体的直线光束照射装置，其特征在于，包括具有透光性的导光体，设在所述导光体的长度方向的一个侧面上的光折射和反射区域2 以及以覆盖光折射和反射区域2的方式设置的光源8以及设置在所述光导体的一端或两端的光源。 这种结构使得可以从对应于所述光折射和反射区域2的光导体的另一侧面照射线性光束。通过这种结构，可以减少所述线性光束的照度偏差 提高光的传输效率，大大减少设在光源处的LED芯片的数量。 此外，这也可以降低成本。
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