公开(公告)号：US5312776A

公开(公告)日：1994-05-17

申请号：US977022

申请日：1992-11-16

申请人： Tomoyasu Murakami ,  Michinari Yamanaka ,  Kousaku Yano ,  Masayuki Endo ,  Noboru Nomura ,  Staoshi Ueda ,  Naoto Matsuo ,  Hiroshi Imai ,  Masafumi Kubota

发明人： Tomoyasu Murakami ,  Michinari Yamanaka ,  Kousaku Yano ,  Masayuki Endo ,  Noboru Nomura ,  Staoshi Ueda ,  Naoto Matsuo ,  Hiroshi Imai ,  Masafumi Kubota

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L23/532 ,  H01L71/44

CPC分类号： H01L21/02071 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S148/131

摘要： According to the method of preventing the corrosion of metallic wirings of the present invention, aluminium alloy wirings are formed on the surface of a substrate with the use of photoresists, and the photoresists are then removed. Thereafter, HMDS (hexamethyl disilazine) serving as a surface-active agent or its derivative is supplied to the aluminium alloy wirings to form hydrophobic molecular layers on the lateral walls of the aluminium alloy wirings.

摘要翻译： 根据本发明的防止金属配线的腐蚀的方法，使用光致抗蚀剂在基板的表面上形成铝合金布线，然后除去光致抗蚀剂。 此后，将作为表面活性剂或其衍生物的HMDS（六甲基二硅嗪）供给到铝合金布线，以在铝合金布线的侧壁上形成疏水性分子层。

公开(公告)号：US5385867A

公开(公告)日：1995-01-31

申请号：US216968

申请日：1994-03-24

申请人： Tetsuya Ueda ,  Kousaku Yano ,  Tomoyasu Murakami ,  Michinari Yamanaka ,  Shuji Hirao ,  Noboru Nomura

发明人： Tetsuya Ueda ,  Kousaku Yano ,  Tomoyasu Murakami ,  Michinari Yamanaka ,  Shuji Hirao ,  Noboru Nomura

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L21/283 ,  H01L21/31

CPC分类号： H01L21/76847 ,  H01L21/76844 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S438/948

摘要： After accumulating a BPSG film layer on a silicon substrate, a first Al--Si--Cu film layer, a W film layer and a second Al--Si--Cu film layer are successively accumulated on this BPSG film layer. A resist pattern with wide-width and narrow-width pattern portions is formed on the second Al--Si--Cu film layer. The wide-width pattern portion is provided at a position corresponding to a contact for connecting a first-layer metallic wiring and a second-layer metallic wiring, while the narrow-width pattern portion is provided at a position corresponding to a wiring portion for the first-layer metallic wiring. After applying first etching on the second Al--Si--Cu film layer with a mask of the resist patter, second etching is applied on the W film layer. Thereafter, by applying third etching, the resist pattern remaining on the first-layer metallic wiring is removed and the first Al--Si--Cu film layer is transfigured into a tall metallic film portion and a short metallic film portion. After accumulating an inter-layer insulating film layer on the first Al--Si--Cu film layer, etchback is applied on this inter-layer insulating film layer until the top of the tall metallic film portion is bared. Then, the second-layer metallic wiring is formed on the inter-layer insulating film layer so that the second-layer metallic wiring is connected with the tall metallic film portion.

摘要翻译： 在硅衬底上积累BPSG膜层之后，第一Al-Si-Cu膜层，W膜层和第二Al-Si-Cu膜层依次堆积在该BPSG膜层上。 在第二Al-Si-Cu膜层上形成具有宽幅和窄宽图案部分的抗蚀剂图案。 宽幅图形部分设置在与用于连接第一层金属布线和第二层金属布线的接触件相对应的位置处，而窄宽图案部分设置在与布线部分相对应的位置处 第一层金属布线。 在具有抗蚀剂图案的掩模的第二Al-Si-Cu膜层上施加第一蚀刻之后，在W膜层上施加第二蚀刻。 此后，通过施加第三蚀刻，去除残留在第一层金属布线上的抗蚀剂图案，并将第一Al-Si-Cu膜层变形为高金属膜部分和短金属膜部分。 在第一Al-Si-Cu膜层上积累层间绝缘膜层之后，在该层间绝缘膜层上施加回蚀，直到高金属膜部分的顶部露出。 然后，在层间绝缘膜层上形成第二层金属布线，使得第二层金属布线与高金属膜部分连接。

公开(公告)号：US5576247A

公开(公告)日：1996-11-19

申请号：US97231

申请日：1993-07-27

申请人： Kousaku Yano ,  Masayuki Endo ,  Yuka Terai ,  Noboru Nomura ,  Tomoyasu Murakami ,  Tetsuya Ueda ,  Satoshi Ueda

发明人： Kousaku Yano ,  Masayuki Endo ,  Yuka Terai ,  Noboru Nomura ,  Tomoyasu Murakami ,  Tetsuya Ueda ,  Satoshi Ueda

IPC分类号： H01L21/3105 ,  H01L21/316

CPC分类号： H01L21/3105 ,  Y10S438/974

摘要： A BPSG layer serving as a silicon oxide layer is formed on a semiconductor substrate 1. Formed on the surface of the BPSG layer is a hydrophobic molecular layer comprising hydrophobic groups such as methyl, ethyl and the like, by a silylation reaction (in which silyl having hydrophobic groups such as methyl groups, ethyl groups and the like, is reacted with OH groups, and in which the hydrophobic groups are substituted with H of the OH groups to generate --O--Si(CH.sub.3).sub.3 or the like). The molecular layer prevents the BPSG layer from absorbing moisture.

摘要翻译： 在半导体衬底1上形成用作氧化硅层的BPSG层。在BPSG层的表面上形成疏水性分子层，其通过甲硅烷基化反应（甲基， 具有疏水基团如甲基，乙基等与OH基团反应，并且其中疏水基团被H的OH基团取代以产生-O-Si（CH 3）3等）。 分子层防止BPSG层吸湿。

公开(公告)号：US5569628A

公开(公告)日：1996-10-29

申请号：US535323

申请日：1995-09-27

申请人： Kousaku Yano ,  Tomoyasu Murakami ,  Masayuki Endo ,  Noboru Nomura

发明人： Kousaku Yano ,  Tomoyasu Murakami ,  Masayuki Endo ,  Noboru Nomura

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/465

CPC分类号： H01L21/76841 ,  H01L21/76843

摘要： A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.

摘要翻译： 部分地蚀刻掉二氧化硅膜以形成开口，从而暴露硅衬底。 几乎完全用Si-OH覆盖的开口的表面涂覆有六甲基二硅氮烷（HMDS）以进行甲硅烷基化反应。 这导致硅衬底表面被用Si（（CH 3）3代替Si-OH中的氢部分而形成的分子膜覆盖，铝的原子通过溅射工艺喷射，喷射的铝原子与分子膜碰撞 虽然由于这种碰撞而使一些烃类（CHx）溅射或喷射，但是从分子膜转化的SiO x C y H z膜12'留在沉积的铝膜和硅基板之间，该SiOxCyHz膜12'作为阻挡金属， SiOxCyHz膜的存在防止了在Al-Si系统中产生反向扩散，结果不形成尖峰。

公开(公告)号：US5863338A

公开(公告)日：1999-01-26

申请号：US583662

申请日：1996-01-05

申请人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

发明人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

IPC分类号： H01L21/205 ,  B05D1/18 ,  B05D7/24 ,  C23C16/54 ,  H01L21/302 ,  C23C16/00

CPC分类号： B82Y30/00 ,  B05D1/185 ,  B05D1/60 ,  B82Y40/00 ,  C23C16/54

摘要： A forming apparatus of a thin film, includes a processing chamber where a predetermined process is carried out on a surface of a supplied substrate, and a feeding device, which is provided in the processing chamber, for feeding material to form an organic molecular layer including silicon or germanium on the surface of the substrate. A forming method of a thin film, includes steps of forming a thin film on a surface of a supplied substrate in a processing chamber, and feeding material for forming an organic molecular layer including silicon or germanium on the formed thin film on the surface of the substrate through a feeding device in the processing chamber, and then forming the organic molecular layer on the surface of the substrate.

摘要翻译： 薄膜的成形装置包括处理室，其中在所提供的基板的表面上执行预定的处理;以及馈送装置，其设置在处理室中，用于馈送材料以形成有机分子层，所述有机分子层包括 硅或锗在基板的表面上。 薄膜的形成方法包括以下步骤：在处理室中的供给的基板的表面上形成薄膜，以及在所形成的薄膜上形成包含硅或锗的有机分子层的供给材料 基板通过处理室中的进料装置，然后在基板的表面上形成有机分子层。

公开(公告)号：US5501739A

公开(公告)日：1996-03-26

申请号：US158305

申请日：1993-11-29

申请人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

发明人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

IPC分类号： H01L21/205 ,  B05D1/18 ,  B05D7/24 ,  C23C16/54 ,  H01L21/302 ,  C23C16/00

CPC分类号： B82Y30/00 ,  B05D1/185 ,  B05D1/60 ,  B82Y40/00 ,  C23C16/54

摘要： A forming apparatus of a thin film includes a processing chamber where a predetermined process is carried out on a surface of a supplied substrate. A feeding device is provided in the processing chamber for feeding material to form an organic molecular layer including silicon or germanium on the surface of the substrate. A forming method of a thin film includes the steps of forming the thin film on the surface of the supplied substrate in the processing chamber, and feeding material for forming the organic molecular layer, including silicon or germanium, on the formed thin film on the surface of the substrate through a feeding device in the processing chamber, and then forming the organic molecular layer on the surface of the substrate.

摘要翻译： 薄膜的形成装置包括处理室，其中在所提供的基板的表面上进行预定的处理。 在处理室中设置有供给装置，用于供给材料以在基板的表面上形成包括硅或锗的有机分子层。 薄膜的形成方法包括以下步骤：在处理室中供应的基板的表面上形成薄膜，以及在表面上形成的薄膜上形成有机分子层（包括硅或锗）的材料 通过处理室中的进料装置，然后在基材表面上形成有机分子层。

公开(公告)号：US5753536A

公开(公告)日：1998-05-19

申请号：US520252

申请日：1995-08-28

申请人： Tatsuo Sugiyama ,  Shuji Hirao ,  Kousaku Yano ,  Noboru Nomura

发明人： Tatsuo Sugiyama ,  Shuji Hirao ,  Kousaku Yano ,  Noboru Nomura

IPC分类号： H01L21/98 ,  H01L25/065 ,  H01L21/60

CPC分类号： H01L23/544 ,  H01L21/76898 ,  H01L24/05 ,  H01L24/12 ,  H01L24/16 ,  H01L24/80 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/13099 ,  H01L2224/80141 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81121 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3511

摘要： A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement.

摘要翻译： 在第一半导体衬底上形成有电极绝缘体的第一电极和第一绝缘层。 在第二半导体衬底上形成第二电极和电极绝缘的第二绝缘层。 第一半导体衬底在其表面上以条纹布置的规则间隔在其表面处具有凹槽/突起的图案（即横截面的锯齿形图案）。 类似地，第二半导体衬底在其表面上在条纹布置中以规则的间隔在其表面处具有凹槽/突起的图案（即，横截面的锯齿形图案），其中第二半导体衬底的图案具有180度的相移， 相对于第一半导体衬底的图案。 第一和第二半导体衬底以它们的图案接合在一起。

公开(公告)号：US5723909A

公开(公告)日：1998-03-03

申请号：US712237

申请日：1996-09-11

申请人： Kousaku Yano ,  Tatsuo Sugiyama ,  Satoshi Ueda ,  Noboru Nomura

发明人： Kousaku Yano ,  Tatsuo Sugiyama ,  Satoshi Ueda ,  Noboru Nomura

IPC分类号： H01L21/205 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2924/0002

摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.

摘要翻译： 第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。 然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。 随后在第一氧化硅层上形成HMDS分子层。 然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。 最后，第二金属化层局部形成在第二氧化硅层上。

公开(公告)号：US6087197A

公开(公告)日：2000-07-11

申请号：US227922

申请日：1999-01-08

申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

IPC分类号： B81B3/00 ,  G01Q70/10 ,  G01Q70/16 ,  G02B6/12 ,  G02B6/124 ,  G11C23/00 ,  H01H1/00 ,  H01L21/308 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/10 ,  H01L33/18 ,  H01L21/20

CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

公开(公告)号：US6033928A

公开(公告)日：2000-03-07

申请号：US333320

申请日：1994-11-02

申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

IPC分类号： B81B3/00 ,  G01Q70/10 ,  G01Q70/16 ,  G02B6/12 ,  G02B6/124 ,  G11C23/00 ,  H01H1/00 ,  H01L21/308 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/10 ,  H01L33/18 ,  H01L21/32

CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

摘要翻译： 在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球状晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。