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公开(公告)号:US09960135B2
公开(公告)日:2018-05-01
申请号:US14665799
申请日:2015-03-23
Applicant: Texas Instruments Incorporated
Inventor: Helmut Rinck , Gernot Bauer , Robert Zrile , Kai-Alexander Schachtschneider , Michael Otte , Harald Wiesner
IPC: H01L21/28 , H01L23/00 , H01L23/522 , H01L23/532
CPC classification number: H01L24/13 , H01L23/5226 , H01L23/53204 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/94 , H01L2224/0345 , H01L2224/03612 , H01L2224/03614 , H01L2224/03622 , H01L2224/03828 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05157 , H01L2224/05558 , H01L2224/05657 , H01L2224/11005 , H01L2224/11334 , H01L2224/11849 , H01L2224/13 , H01L2224/13014 , H01L2224/13016 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/94 , H01L2924/01022 , H01L2924/01029 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/2064 , H01L2924/00014 , H01L2224/03 , H01L2924/01078 , H01L2924/00012 , H01L2924/01047 , H01L2924/01082 , H01L2924/01051
Abstract: A method of forming bond pads includes providing a substrate including an integrated circuit (IC) device formed thereon having an oxidizable uppermost metal interconnect layer which provides a plurality of bond pads that are coupled to circuit nodes on the IC device. The plurality of bond pads includes a metal bond pad area. A cobalt including connection layer is deposited directly on the metal bond pad area. The cobalt including connection layer is patterned to provide a cobalt bond pad surface for the plurality of bond pads, and a solder material is formed on the cobalt bond pad surface.