公开(公告)号：US09960135B2

公开(公告)日：2018-05-01

申请号：US14665799

申请日：2015-03-23

Applicant: Texas Instruments Incorporated

Inventor： Helmut Rinck ,  Gernot Bauer ,  Robert Zrile ,  Kai-Alexander Schachtschneider ,  Michael Otte ,  Harald Wiesner

IPC: H01L21/28 ,  H01L23/00 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L24/13 ,  H01L23/5226 ,  H01L23/53204 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/03622 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05558 ,  H01L2224/05657 ,  H01L2224/11005 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/94 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/01078 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/01051

Abstract: A method of forming bond pads includes providing a substrate including an integrated circuit (IC) device formed thereon having an oxidizable uppermost metal interconnect layer which provides a plurality of bond pads that are coupled to circuit nodes on the IC device. The plurality of bond pads includes a metal bond pad area. A cobalt including connection layer is deposited directly on the metal bond pad area. The cobalt including connection layer is patterned to provide a cobalt bond pad surface for the plurality of bond pads, and a solder material is formed on the cobalt bond pad surface.