公开(公告)号：US20180122530A1

公开(公告)日：2018-05-03

申请号：US15662251

申请日：2017-07-27

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： DONG-QI LI ,  YANG WEI ,  KAI-LI JIANG ,  SHOU-SHAN FAN

IPC分类号： H01B1/04 ,  H01B5/14 ,  H01B13/00 ,  H01J37/28

CPC分类号： H01B1/04 ,  H01B5/14 ,  H01B13/0036 ,  H01J37/28 ,  H01J2237/2813 ,  H01L21/32056 ,  H01L21/32136 ,  H01L22/12 ,  H01L29/456 ,  H01L51/0017 ,  H01L51/0048

摘要： A method for making a transparent conductive layer comprising: providing a carbon nanotube film comprising a plurality of carbon nanotubes; providing a conductive substrate and applying an insulating layer on the conductive substrate; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope; adjusting the scanning electron microscope, and taking photos of the carbon nanotube film with the scanning electron microscope; obtaining a photo of the carbon nanotube film, wherein the photo shows the plurality of carbon nanotubes and a background, a plurality of first carbon nanotubes of the plurality of carbon nanotubes have lighter color than a color of the background, a plurality of second carbon nanotubes of the plurality of carbon nanotubes have deeper color than the color of the background; and removing the plurality of second carbon nanotubes.

公开(公告)号：US20180090324A1

公开(公告)日：2018-03-29

申请号：US15588976

申请日：2017-05-08

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： QING CAO ,  SHU-JEN HAN ,  NING LI ,  JIANSHI TANG

IPC分类号： H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L21/2807 ,  B82Y10/00 ,  H01L21/26513 ,  H01L21/28088 ,  H01L21/32056 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/775 ,  H01L29/78

摘要： A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.

公开(公告)号：US20160351416A1

公开(公告)日：2016-12-01

申请号：US14912622

申请日：2015-05-29

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Jiuxia Yang ,  Feng Bai

IPC分类号： H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/288 ,  H01L21/3215

CPC分类号： H01L21/32056 ,  G02F1/13439 ,  G02F2202/36 ,  H01L21/288 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/3215 ,  H01L21/48 ,  H01L23/48 ,  H01L51/0048 ,  H01L51/5203

摘要： The present invention discloses an electrode structure, a method of manufacturing an electrode structure, a display substrate and a display device. The method of manufacturing an electrode structure includes: forming a layer of carbon nanotube film on a substrate; performing a doping process in the layer of carbon nanotube film by using a modifier material, and performing a patterning process on the doped layer of carbon nanotube film so as to form a pattern including first electrode; or performing a patterning process on the layer of carbon nanotube film so as to form a patterns including carbon nanotube electrodes, and performing a doping process in the pattern of the carbon nanotube electrodes so as to form a pattern including first electrodes; as such, the carbon nanotubes material is doped with the modifier material, such that the formed first electrode has a lower square resistance value, which may meet the conductivity requirement of the flexible electrode of the flexible display.

摘要翻译： 本发明公开了电极结构体，电极结构体的制造方法，显示基板以及显示装置。 制造电极结构的方法包括：在基板上形成碳纳米管膜层; 通过使用改性材料在碳纳米管膜层中进行掺杂工艺，并对碳纳米管膜的掺杂层进行图案化处理，以形成包括第一电极的图案; 或在碳纳米管膜层上进行图案化处理，以形成包括碳纳米管电极的图案，并且在碳纳米管电极的图案中进行掺杂工艺以形成包括第一电极的图案; 因此，碳纳米管材料掺杂有改性剂材料，使得所形成的第一电极具有较低的方形电阻值，其可以满足柔性显示器的柔性电极的导电性要求。

公开(公告)号：US09190515B2

公开(公告)日：2015-11-17

申请号：US12705454

申请日：2010-02-12

申请人： Matthias Bauer

发明人： Matthias Bauer

IPC分类号： H01L21/02 ,  H01L29/78 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/455 ,  C30B25/02 ,  C30B29/06 ,  H01L21/3205 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm−3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

摘要翻译： 含有相对高含量的III族或V族掺杂剂的含Si膜的方法涉及使用丙硅烷和掺杂剂前体的化学气相沉积。 可以获得极高水平的取代掺入，包括含有电活性掺杂剂的至少约3×1020原子cm -3的晶体硅膜。 通过在沉积期间引入蚀刻剂气体，可将选择性地掺杂的含Si薄膜选择性地沉积在混合基板的晶体表面上。

公开(公告)号：US20130183445A1

公开(公告)日：2013-07-18

申请号：US13766469

申请日：2013-02-13

申请人： ASM International N.V.

发明人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC分类号： C23C16/32

CPC分类号： H01L21/0228 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3205 ,  H01L21/32055 ,  H01L21/32056 ,  H01L21/76843

摘要： Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

摘要翻译： 提供了通过原子层沉积（ALD）在基板上制造具有低杂质含量的含金属薄膜的方法。 所述方法优选包括使基板与金属源化学品，第二源化学品和沉积增强剂的交替和顺序脉冲接触。 沉积增强剂优选选自烃，氢，氢等离子体，氢原子，硅烷，锗化合物，氮化合物和硼化合物。 在一些实施方案中，沉积增强剂与生长的薄膜中的卤化物污染物反应，改善膜的性质。

公开(公告)号：US07858525B2

公开(公告)日：2010-12-28

申请号：US11694677

申请日：2007-03-30

申请人： Juan E. Dominguez ,  Adrien R. Lavoie ,  John J. Plombon ,  Joseph H. Han ,  Harsono S. Simka ,  Bryan C. Hendrix ,  Gregory T. Stauf

发明人： Juan E. Dominguez ,  Adrien R. Lavoie ,  John J. Plombon ,  Joseph H. Han ,  Harsono S. Simka ,  Bryan C. Hendrix ,  Gregory T. Stauf

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32056 ,  H01L21/76861 ,  H01L21/76873

摘要： A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor.

摘要翻译： 一种包括在基材存在下引入无氟有机金属前体的方法; 以及根据原子层或化学气相沉积工艺在所述衬底上形成包括所述有机金属前体的部分的导电层。 一种包括通过电介质层形成开口到接触点的方法; 引入无氟铜膜前体和共反应物; 并在开口中形成含铜种子层。 一种包括计算机的系统，所述计算机包括电耦合到印刷电路板的微处理器，所述微处理器包括由无氟有机金属前体形成的导电互连结构。

公开(公告)号：US07777397B2

公开(公告)日：2010-08-17

申请号：US11684700

申请日：2007-03-12

申请人： Vivek Bharti ,  Matthew J. Michel

发明人： Vivek Bharti ,  Matthew J. Michel

IPC分类号： H01L41/047 ,  H01L41/22

CPC分类号： H05K3/101 ,  B29C47/0021 ,  B29C47/062 ,  B29C47/065 ,  B29C47/145 ,  H01L21/32056 ,  H01L41/0471 ,  H01L41/083 ,  H01L41/297 ,  H01L41/333 ,  H01L41/45 ,  H05K3/4664 ,  H05K2201/09881 ,  Y10T29/42

摘要： An article comprises first and second electrically responsive elements having a cutting plane which is perpendicular to an x-dimension for separating the elements. The conductive elements of the conductive layers are alternatingly exposed to one of the two opposing faces of the conductive element.

摘要翻译： 一种制品包括第一和第二电响应元件，其具有垂直于用于分离元件的x维度的切割平面。 导电层的导电元件交替地暴露于导电元件的两个相对面之一。

公开(公告)号：US20070148350A1

公开(公告)日：2007-06-28

申请号：US11588837

申请日：2006-10-27

申请人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

发明人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC分类号： C23C16/00 ,  C23C16/40 ,  H01L21/44

CPC分类号： H01L21/0228 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3205 ,  H01L21/32055 ,  H01L21/32056 ,  H01L21/76843

摘要： Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

摘要翻译： 提供了通过原子层沉积（ALD）在基板上制造具有低杂质含量的含金属薄膜的方法。 所述方法优选包括使基板与金属源化学品，第二源化学品和沉积增强剂的交替和顺序脉冲接触。 沉积增强剂优选选自烃，氢，氢等离子体，氢原子，硅烷，锗化合物，氮化合物和硼化合物。 在一些实施方案中，沉积增强剂与生长的薄膜中的卤化物污染物反应，改善膜的性质。

公开(公告)号：US10009001B2

公开(公告)日：2018-06-26

申请号：US15349207

申请日：2016-11-11

申请人： Texas Instruments Incorporated

发明人： Neng Jiang ,  Maciej Blasiak ,  Nicholas S. Dellas ,  Brian E. Goodlin

IPC分类号： H01L41/083 ,  H03H9/02 ,  H01L21/3213 ,  H01L21/3205 ,  H01L29/06 ,  H03H3/02 ,  H03H9/17

CPC分类号： H03H9/02015 ,  H01L21/32056 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/0657 ,  H01L29/41725 ,  H03H3/02 ,  H03H9/02102 ,  H03H9/02133 ,  H03H9/175 ,  H03H9/178 ,  H03H2003/025

摘要： Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.

公开(公告)号：US09831094B2

公开(公告)日：2017-11-28

申请号：US14812139

申请日：2015-07-29

申请人： ASM International N.V.

发明人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC分类号： C23C16/455 ,  H01L21/285 ,  C23C16/32 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/312

CPC分类号： H01L21/0228 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3205 ,  H01L21/32055 ,  H01L21/32056 ,  H01L21/76843

摘要： Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.