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公开(公告)号：US20180163297A1
公开(公告)日：2018-06-14
申请号：US15376867
申请日：2016-12-13
Applicant: The Boeing Company
Inventor： Keith Daniel Humfeld , De'Andre James Cherry
IPC: C23C16/01 , C23C16/26 , C23C16/458 , C23C16/52
CPC classification number: C23C16/01 , C23C16/003 , C23C16/26 , C23C16/402 , C23C16/403 , C23C16/4418 , C23C16/455 , C23C16/4557
Abstract: A chemical vapor deposition method comprises flowing a carrier liquid through a reactor. A fluid comprising one or more reactants is introduced into the carrier liquid. The fluid is at a first temperature and first pressure and is sufficiently immiscible in the carrier liquid so as to form a plurality of microreactors suspended in the carrier liquid. Each of the microreactors comprise a discrete volume of the fluid and have a surface boundary defined by an interface of the fluid with the carrier liquid. The fluid is heated and optionally pressurized to a second temperature and second pressure at which a chemical vapor deposition reaction occurs within the microreactors to form a plurality of chemical vapor deposition products. The plurality of chemical vapor deposition products are separated from the carrier liquid. A system for carrying out the method of the present disclosure is also taught.
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Patent Agency Ranking
公开(公告)号：US11371135B2
公开(公告)日：2022-06-28
申请号：US16434053
申请日：2019-06-06
Applicant: The Boeing Company
Inventor： Keith Daniel Humfeld , De'Andre James Cherry
Abstract: A chemical vapor deposition method comprises flowing a carrier liquid through a reactor. A fluid comprising one or more reactants is introduced into the carrier liquid. The fluid is at a first temperature and first pressure and is sufficiently immiscible in the carrier liquid so as to form a plurality of microreactors suspended in the carrier liquid. Each of the microreactors comprise a discrete volume of the fluid and have a surface boundary defined by an interface of the fluid with the carrier liquid. The fluid is heated and optionally pressurized to a second temperature and second pressure at which a chemical vapor deposition reaction occurs within the microreactors to form a plurality of chemical vapor deposition products. The plurality of chemical vapor deposition products are separated from the carrier liquid. A system for carrying out the method of the present disclosure is also taught.
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公开(公告)号：US20190301008A1
公开(公告)日：2019-10-03
申请号：US16434053
申请日：2019-06-06
Applicant: The Boeing Company
Inventor： Keith Daniel Humfeld , De'Andre James Cherry
Abstract: A chemical vapor deposition method comprises flowing a carrier liquid through a reactor. A fluid comprising one or more reactants is introduced into the carrier liquid. The fluid is at a first temperature and first pressure and is sufficiently immiscible in the carrier liquid so as to form a plurality of microreactors suspended in the carrier liquid. Each of the microreactors comprise a discrete volume of the fluid and have a surface boundary defined by an interface of the fluid with the carrier liquid. The fluid is heated and optionally pressurized to a second temperature and second pressure at which a chemical vapor deposition reaction occurs within the microreactors to form a plurality of chemical vapor deposition products. The plurality of chemical vapor deposition products are separated from the carrier liquid. A system for carrying out the method of the present disclosure is also taught.
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公开(公告)号：US10337101B2
公开(公告)日：2019-07-02
申请号：US15376867
申请日：2016-12-13
Applicant: The Boeing Company
Inventor： Keith Daniel Humfeld , De'Andre James Cherry
Abstract: A chemical vapor deposition method comprises flowing a carrier liquid through a reactor. A fluid comprising one or more reactants is introduced into the carrier liquid. The fluid is at a first temperature and first pressure and is sufficiently immiscible in the carrier liquid so as to form a plurality of microreactors suspended in the carrier liquid. Each of the microreactors comprise a discrete volume of the fluid and have a surface boundary defined by an interface of the fluid with the carrier liquid. The fluid is heated and optionally pressurized to a second temperature and second pressure at which a chemical vapor deposition reaction occurs within the microreactors to form a plurality of chemical vapor deposition products. The plurality of chemical vapor deposition products are separated from the carrier liquid. A system for carrying out the method of the present disclosure is also taught.
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公开(公告)号：US10006123B2
公开(公告)日：2018-06-26
申请号：US15151203
申请日：2016-05-10
Applicant: The Boeing Company
Inventor： Keith Daniel Humfeld , De'Andre James Cherry
IPC: C23C16/46 , C23C16/455
CPC classification number: C23C16/46 , C23C16/448 , C23C16/455 , C23C16/48
Abstract: A method for chemical vapor deposition on a substrate is disclosed. The method may include directing a process gas into a reaction chamber, and heating the process gas in the reaction chamber. Heating the process gas in the reaction chamber may decompose the process gas to thereby generate a plurality of decomposition products. The method may also include applying one or more biasing fields and/or waves to the process gas upstream of the substrate, and reacting the process gas with the substrate. The one or more biasing fields and/or waves may include electromagnetic waves, electric fields, and/or magnetic fields. The biasing fields and/or waves may urge at least a portion of the process gas towards or away from the substrate.
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公开(公告)号：US20170327950A1
公开(公告)日：2017-11-16
申请号：US15151203
申请日：2016-05-10
Applicant: The Boeing Company
Inventor： Keith Daniel Humfeld , De'Andre James Cherry
IPC: C23C16/46 , C23C16/455
CPC classification number: C23C16/46 , C23C16/448 , C23C16/455 , C23C16/48
Abstract: A method for chemical vapor deposition on a substrate is disclosed. The method may include directing a process gas into a reaction chamber, and heating the process gas in the reaction chamber. Heating the process gas in the reaction chamber may decompose the process gas to thereby generate a plurality of decomposition products. The method may also include applying one or more biasing fields and/or waves to the process gas upstream of the substrate, and reacting the process gas with the substrate. The one or more biasing fields and/or waves may include electromagnetic waves, electric fields, and/or magnetic fields. The biasing fields and/or waves may urge at least a portion of the process gas towards or away from the substrate.
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