公开(公告)号：US06794282B2

公开(公告)日：2004-09-21

申请号：US10305063

申请日：2002-11-27

申请人： Thomas Goebel ,  Werner Robl ,  Rajeev Malik ,  Mihel Seitz

发明人： Thomas Goebel ,  Werner Robl ,  Rajeev Malik ,  Mihel Seitz

IPC分类号： H01L2144

CPC分类号： H01L27/10888 ,  H01L21/76882

摘要： A method of forming a semiconductor device includes providing a semiconductor device including a conductor formed thereon. A dielectric layer is formed over the conductor and a recess is formed in the dielectric layer by removing a portion of the dielectric layer to expose at least a portion of the conductor. A first layer of aluminum is deposited over the top surface of the dielectric, along the sidewalls of the dielectric layer and over the exposed portion of the conductor without altering the temperature of the semiconductor device. A second layer of aluminum is deposited over the first layer of aluminum at a temperature greater than about 300° C. A third layer of aluminum is deposited over the second layer of aluminum so as to completely fill the recess in the dielectric layer. The third layer of aluminum is slow deposited at a temperature greater than about 300° C.

摘要翻译： 形成半导体器件的方法包括提供包括形成在其上的导体的半导体器件。 在导体上形成电介质层，并且通过去除电介质层的一部分以露出导体的至少一部分，在电介质层中形成凹陷。 沿着电介质层的侧壁并在导体的暴露部分之上沉积在电介质的顶表面上的第一层铝，而不改变半导体器件的温度。 在大于约300℃的温度下，在第一层铝上沉积第二层铝。第三层铝沉积在第二层铝上，以便完全填充介电层中的凹槽。 第三层铝在大于约300℃的温度下缓慢沉积

公开(公告)号：US06294423B1

公开(公告)日：2001-09-25

申请号：US09718211

申请日：2000-11-21

申请人： Rajeev Malik ,  Mihel Seitz ,  Andreas Knorr

发明人： Rajeev Malik ,  Mihel Seitz ,  Andreas Knorr

IPC分类号： H01L218242

CPC分类号： H01L21/76229 ,  H01L27/1087

摘要： A method for forming isolation trenches for a semiconductor device forms, in a substrate, a plurality of trenches having different widths including widths above a threshold size and widths below a threshold size. The plurality of trenches have a same first depth. A masking layer is deposited in the plurality of trenches, the masking layer has a thickness sufficient to both line the trenches with the widths above the threshold size and completely fill the trenches with the widths below the threshold size. A portion of the substrate is exposed at a bottom of the trenches with the widths above the threshold size by etching the masking layer. The plurality of trenches is etched to extend the trenches with the widths above the threshold size to different depths.

摘要翻译： 用于形成用于半导体器件的隔离沟槽的方法在衬底中形成具有不同宽度的多个沟槽，所述宽度包括高于阈值尺寸的宽度和低于阈值尺寸的宽度。 多个沟槽具有相同的第一深度。 掩蔽层沉积在多个沟槽中，掩模层具有足够的厚度以使沟槽线宽度高于阈值尺寸，并以宽度低于阈值尺寸完全填充沟槽。 通过蚀刻掩模层，将衬底的一部分暴露在沟槽底部，宽度高于阈值大小。 多个沟槽被蚀刻以将具有高于阈值尺寸的宽度的沟槽延伸到不同的深度。

公开(公告)号：US06724054B1

公开(公告)日：2004-04-20

申请号：US10320867

申请日：2002-12-17

申请人： Woo-tag Kang ,  Rajeev Malik ,  Mihel Seitz

发明人： Woo-tag Kang ,  Rajeev Malik ,  Mihel Seitz

IPC分类号： H01L31119

CPC分类号： H01L21/76897 ,  H01L29/6656

摘要： A method for fabricating a self-aligned contact in an integrated circuit includes defining first spacer layers over the sidewalls of a pair of wordline stacks. An oxide layer is deposited over the tops of the wordline stacks, the first spacer layers and a surface of the substrate disposed between the first spacer layers. The oxide layer is removed from the first spacer layers, thereby forming a remaining oxide layer that covers the surface of the substrate disposed between the first spacer layers. Second spacer layers are formed over the first spacer layers, and which cover respective portions of the remaining oxide layer. The remaining oxide layer is removed to thereby form undercut regions. The undercut regions are substantially filled with contact material during formation of the contact.

摘要翻译： 在集成电路中制造自对准接触的方法包括在一对字线堆叠的侧壁上限定第一间隔层。 氧化物层沉积在字线堆叠的顶部上，第一间隔层和设置在第一间隔层之间的衬底的表面。 从第一间隔层去除氧化物层，从而形成覆盖设置在第一间隔层之间的衬底的表面的剩余氧化物层。 第二间隔层形成在第一间隔层之上，并且覆盖剩余氧化物层的各个部分。 除去剩余的氧化物层，从而形成底切区域。 在形成接触期间，底切区域基本上被接触材料填充。

公开(公告)号：US06509226B1

公开(公告)日：2003-01-21

申请号：US09670741

申请日：2000-09-27

申请人： Venkatachalam C. Jaiprakash ,  Jack Mandelman ,  Ramachandra Divakaruni ,  Rajeev Malik ,  Mihel Seitz

发明人： Venkatachalam C. Jaiprakash ,  Jack Mandelman ,  Ramachandra Divakaruni ,  Rajeev Malik ,  Mihel Seitz

IPC分类号： H01L218242

CPC分类号： H01L27/10861

摘要： Processing of a DRAM device containing vertical MOSFET arrays proceeds through planarization of the array gate conductor (GC) polysilicon of the vertical MOSFET to the top surface of the top oxide. A thin polysilicon layer is deposited over the planarized surface and an active area (M) pad nitride and tetraethyl orthosilicate (TEOS) stack is deposited. The M mask is used to open the pad layer to the silicon surface, and shallow trench isolation (STI) etching is used to form isolation trenches. An AA oxidation is performed, the isolation trenches are filled with high density plasma (HDP) oxide and planarized to the top surface of the AA pad nitride. Following isolation trench (IT) planarization, the AA pad nitride is stripped, with the thin silicon layer serving as an etch stop protecting the underlying top oxide. The etch support (ES) nitride liner is deposited, and the ES mask is patterned to open the support areas. The ES nitride, thin polysilicon layer and top oxide are etched from the exposed areas. A sacrificial oxidation is applied along with well implants, support gate oxidation and support gate polysilicon deposition. Using the etch array (EA) mask, the support gate polysilicon is opened in the array. The ES nitride is removed selective to the underlying silicon layer, protecting the top oxide. The gate stack is deposited and patterned and the process continues to completion.

摘要翻译： 包含垂直MOSFET阵列的DRAM器件的处理通过将垂直MOSFET的阵列栅极导体（GC）多晶硅平坦化到顶部氧化物的顶表面进行。 在平坦化表面上沉积薄多晶硅层，并沉积有源区（M）衬垫氮化物和原硅酸四乙酯（TEOS）堆叠。 M掩模用于将焊盘层打开到硅表面，并且使用浅沟槽隔离（STI）蚀刻来形成隔离沟槽。 执行AA氧化，隔离沟槽填充有高密度等离子体（HDP）氧化物，并且平坦化到AA衬垫氮化物的顶表面。 在隔离沟槽（IT）平坦化之后，剥离AA衬垫氮化物，薄硅层用作保护底层氧化物的蚀刻停止层。 沉积蚀刻载体（ES）氮化物衬垫，并且将ES掩模图案化以打开支撑区域。 从暴露的区域蚀刻ES氮化物，薄多晶硅层和顶部氧化物。 牺牲氧化与井注入一起施加，支持栅极氧化和支撑栅极多晶硅沉积。 使用蚀刻阵列（EA）掩模，在阵列中打开支撑栅极多晶硅。 对于下层硅层选择性地除去ES氮化物，保护顶部氧化物。 沉积栅极堆叠并图案化，并且该工艺继续完成。

公开(公告)号：US07034352B2

公开(公告)日：2006-04-25

申请号：US10777332

申请日：2004-02-11

申请人： Mihel Seitz ,  Venkatachalam C. Jaiprakash

发明人： Mihel Seitz ,  Venkatachalam C. Jaiprakash

IPC分类号： H01L27/108

CPC分类号： H01L27/10867 ,  H01L21/76224 ,  H01L27/10864

摘要： The methods and structures of the present invention involve providing a vertical dynamic random access memory (DRAM) cell device comprising a buried strap which can be laterally constrained, thereby maintaining freedom from cross talk, even at 6F2 scaling, in the absence of adjacent Shallow Trench Isolation (STI). The methods and structures of the present invention involve the further recognition that the STI can therefore be vertically confined, freed of any need to extend down below the level of the buried strap. The reduction of the buried strap to 1F width and the concomitant reduction in the depth of the STI together permit a significantly reduced aspect ratio, permitting critically improved manufacturability.

摘要翻译： 本发明的方法和结构包括提供垂直动态随机存取存储器（DRAM）单元装置，其包括可以被横向约束的埋地带，从而即使在6F2缩放下，在没有相邻的浅沟槽的情况下也可以保持免受串扰的自由 隔离（STI）。 本发明的方法和结构涉及进一步的认识，因此STI可以被垂直地限制，而不需要向下延伸到埋藏带的水平以下。 将掩埋带减少到1F宽度并且伴随着STI的深度的降低允许显着减小的纵横比，从而允许严格改进的可制造性。

公开(公告)号：US06960514B2

公开(公告)日：2005-11-01

申请号：US10803395

申请日：2004-03-18

申请人： Jochen Beintner ,  Rama Divakaruni ,  Johnathan Faltermeier ,  Philip L. Flaitz ,  Oleg Gluschenkov ,  Carol J. Heenan ,  Rajarao Jammy ,  Byeong Kim ,  Mihel Seitz ,  Akira Sudo ,  Yoichi Takegawa

发明人： Jochen Beintner ,  Rama Divakaruni ,  Johnathan Faltermeier ,  Philip L. Flaitz ,  Oleg Gluschenkov ,  Carol J. Heenan ,  Rajarao Jammy ,  Byeong Kim ,  Mihel Seitz ,  Akira Sudo ,  Yoichi Takegawa

IPC分类号： H01L21/762

CPC分类号： H01L21/76224

摘要： An improved pitcher-shaped active area for a field effect transistor that, for a given gate length, achieves an increase in transistor on-current, a decrease in transistor serial resistance, and a decrease in contact resistance. The pitcher-shaped active area structure includes at least two shallow trench insulator (STI) structures formed into a substrate that defines an active area structure, which includes a widened top portion with a larger width than a bottom portion. An improved fabrication method for forming the improved pitcher-shaped active area is also described that implements a step to form STI structure divots followed by a step to migrate substrate material into at least portions of the divots, thereby forming a widened top portion of the active area structure. The fabrication method of present invention forms the pitcher-shaped active area without the use of lithography, and therefore, is not limited by the smallest ground rules of lithography tooling.

摘要翻译： 对于给定的栅极长度，对于晶体管导通电流的增加，晶体管串联电阻的降低和接触电阻的降低，用于场效应晶体管的改进的投池形有源区域。 投球形有源区结构包括形成在衬底中的至少两个浅沟槽绝缘体（STI）结构，其限定有源区域结构，其包括宽度比底部宽的加宽顶部部分。 还描述了一种用于形成改进的捕鱼器活性区域的改进的制造方法，其实现了形成STI结构图形的步骤，随后是将基板材料迁移到图案的至少部分中的步骤，从而形成活动的加宽顶部 区域结构。 本发明的制造方法在不使用光刻的情况下形成投手型有源区域，因此不受光刻工具的最小基准规则的限制。

公开(公告)号：US20050202626A1

公开(公告)日：2005-09-15

申请号：US11071532

申请日：2005-03-04

申请人： Mihel Seitz ,  Stephan Wege

发明人： Mihel Seitz ,  Stephan Wege

IPC分类号： H01L21/308 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L27/108

CPC分类号： H01L29/66181 ,  H01L27/1087

摘要： The present invention provides a method for fabricating a semiconductor structure having the steps of: providing a semiconductor substrate (1) made of silicon with a first hard mask layer (10; 10′) made of silicon oxide and an overlying second hard mask layer (15; 15′) made of silicon; providing a masking layer (30; 30′) made of silicon oxide above and laterally with respect to the second hard mask layer (15; 15′) made of silicon and above an uncovered edge region (RB) of the semiconductor substrate (1); providing a photoresist mask (25) above the masking layer (30; 30′) with openings corresponding from trenches (DT) to be formed in the semiconductor substrate (1); opening the masking layer (30; 30′) in a first plasma process using the photoresist mask (25), the edge region (RB) being covered by a shielding device (AR); opening the first hard mask layer (10; 10′) and second hard mask layer (15; 15′) in a second and third plasma process; and forming the trenches (DT) in the semiconductor substrate (1) in a fourth plasma process using the opened first hard mask layer (10; 10′); the edge region (RB) not being covered by the shielding device (AR) in the second to fourth plasma processes.

摘要翻译： 本发明提供一种半导体结构的制造方法，其特征在于，具有以下步骤：提供由硅制成的半导体衬底（1），所述半导体衬底（1）由氧化硅制成的第一硬掩模层（10; 10'）和覆盖的第二硬掩模层 15; 15'）由硅制成; 在半导体衬底（1）的未覆盖边缘区域（RB）上方提供相对于由硅制成的第二硬掩模层（15; 15'）上方和侧面的由氧化硅制成的掩模层（30; 30'）， ; 在所述掩模层（30; 30'）上方设置与所述半导体衬底（1）中形成的沟槽（DT）对应的开口的光致抗蚀剂掩模（25）; 在使用光致抗蚀剂掩模（25）的第一等离子体工艺中打开掩模层（30; 30'），边缘区域（RB）被屏蔽装置（AR）覆盖; 在第二和第三等离子体工艺中打开第一硬掩模层（10; 10'）和第二硬掩模层（15; 15'）; 以及使用所述打开的第一硬掩模层（10; 10'）在第四等离子体工艺中在所述半导体衬底（1）中形成所述沟槽（DT）。 在第二至第四等离子体处理中边缘区域（RB）不被屏蔽装置（AR）覆盖。

公开(公告)号：US06849496B2

公开(公告)日：2005-02-01

申请号：US10617511

申请日：2003-07-11

申请人： Venkatachalam C. Jaiprakash ,  Mihel Seitz ,  Norbert Arnold

发明人： Venkatachalam C. Jaiprakash ,  Mihel Seitz ,  Norbert Arnold

IPC分类号： H01L21/8242

CPC分类号： H01L27/10867

摘要： A semiconductor Dynamic Random Access Memory (DRAM) cell is fabricated using a vertical access transistor and a storage capacitor formed in a vertical trench. A Shallow Trench Isolation (STI) region is used as a masking region to confine the channel region of the access transistor, the first and second output regions of the access transistor, and a strap region connecting the second output region to the storage capacitor, to a narrow portion of the trench. The so confined second output region of the access transistor has reduced leakage to similar second output regions of adjacent memory cells. Adjacent memory cells can then be placed closer to one another without an increase in leakage and cross-talk between adjacent memory cells.

摘要翻译： 使用垂直存取晶体管和形成在垂直沟槽中的存储电容器制造半导体动态随机存取存储器（DRAM）单元。 浅沟槽隔离（STI）区域用作屏蔽区域，以将存取晶体管的沟道区域，存取晶体管的第一和第二输出区域以及将第二输出区域连接到存储电容器的带区域限制到 沟槽的一小部分。 存取晶体管的如此限制的第二输出区域减少了泄漏到相邻存储器单元的类似的第二输出区域。 相邻的存储器单元然后可以彼此更靠近地放置，而不会增加相邻存储单元之间的泄漏和串扰。

公开(公告)号：US06706634B1

公开(公告)日：2004-03-16

申请号：US09664825

申请日：2000-09-19

申请人： Mihel Seitz ,  Andreas Knorr ,  Irene McStay

发明人： Mihel Seitz ,  Andreas Knorr ,  Irene McStay

IPC分类号： H01L21302

CPC分类号： H01L27/10867 ,  H01L27/10864

摘要： A high density plasma deposition process for eliminating or reducing a zipper-like profile of opened-up voids in a poly trench fill by controlling separation between a transfer gate and storage node in a vertical DRAM, comprising: etching a recess or trench into poly Si of a semiconductor chip; forming a pattern of SiN liner using a mask transfer process for formation of a single sided strap design; removing the SiN liner and etching adjacent collar oxide away from a top part of the trench; depositing a high density plasma (HDP) polysilicon layer in the trench by flowing either SiH4 or SiH4+H2 in an inert ambient; employing a photoresist in the trench and removing the high density plasma polysilicon layer from a top surface of the semiconductor to avoid shorting in the gate conductor either by spinning on resist and subsequent chemical mechanical polishing or chemical mechanical downstream etchback of the polysilicon layer; and stripping the photoresist and depositing a top trench oxide by high density plasma.

摘要翻译： 一种高密度等离子体沉积工艺，用于通过控制垂直DRAM中的转移栅极和存储节点之间的分离来消除或减少多沟槽填充物中的开放空隙的拉链状轮廓，包括：将凹槽或沟槽蚀刻成多晶硅 形成半导体芯片;使用用于形成单面带设计的掩模转移工艺形成SiN衬垫的图案;去除SiN衬垫并将邻近的环氧化物蚀刻离开沟槽的顶部;沉积高密度等离子体（HDP ）多晶硅层，通过在惰性环境中流过SiH 4或SiH 4 + H 2;在沟槽中使用光致抗蚀剂并从半导体的顶表面去除高密度等离子体多晶硅层，以避免通过旋转在栅极导体中短路 在抗蚀剂和随后的化学机械抛光或多晶硅层的化学机械下游回蚀; 并且蚀刻光致抗蚀剂并通过高密度等离子体沉积顶部沟槽氧化物。

公开(公告)号：US06531377B2

公开(公告)日：2003-03-11

申请号：US09904799

申请日：2001-07-13

申请人： Andreas Knorr ,  Mihel Seitz

发明人： Andreas Knorr ,  Mihel Seitz

IPC分类号： H01L2100

CPC分类号： H01L21/76229

摘要： A method of providing isolation between element regions of a semiconductor memory device (200). Isolation trenches (211) are filled using several sequential anisotropic insulating material (216/226/230) HPD-CVD deposition processes, with each deposition process being followed by an isotropic etch back to remove the insulating material (216/226/230) from the isolation trench (211) sidewalls. A nitride liner (225) may be deposited after isolation trench (211) formation. A top portion of the nitride liner (225) may be removed prior to the deposition of the top insulating material (230) layer.

摘要翻译： 一种在半导体存储器件（200）的元件区域之间提供隔离的方法。 使用几种顺序各向异性绝缘材料（216/226/230）HPD-CVD沉积工艺填充绝缘沟槽（211），每个沉积工艺之后是各向同性蚀刻，以从绝缘材料（216/226/230）中除去绝缘材料 隔离沟槽（211）侧壁。 可以在形成隔离沟槽（211）之后沉积氮化物衬垫（225）。 可以在沉积顶部绝缘材料（230）层之前去除氮化物衬垫（225）的顶部部分。