ONE-DIMENSIONAL METALLIZATION FOR SOLAR CELLS
    2.
    发明申请
    ONE-DIMENSIONAL METALLIZATION FOR SOLAR CELLS 审中-公开
    太阳能电池的一维金属化

    公开(公告)号:US20160380132A1

    公开(公告)日:2016-12-29

    申请号:US14750821

    申请日:2015-06-25

    摘要: Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.

    摘要翻译: 描述了制造用于太阳能电池的一维金属化的方法以及所得到的太阳能电池。 在一个示例中,太阳能电池包括具有背面和相对的光接收表面的基板。 多个交替的N型和P型半导体区域设置在基板的背面中或上方并且沿着第一方向平行,以形成用于太阳能电池的发射极区域的一维布局。 导电接触结构设置在多个交替的N型和P型半导体区域上。 导电接触结构包括对应于多个交替的N型和P型半导体区的多个金属线。 多个金属线沿着第一方向平行以形成用于太阳能电池的金属化层的一维布局。

    Leave-In Etch Mask for Foil-Based Metallization of Solar Cells
    7.
    发明申请
    Leave-In Etch Mask for Foil-Based Metallization of Solar Cells 审中-公开
    用于太阳能电池箔基金属化的离子蚀刻掩模

    公开(公告)号:US20160380127A1

    公开(公告)日:2016-12-29

    申请号:US14752828

    申请日:2015-06-26

    摘要: Approaches for fabricating foil-based metallization of solar cells based on a leave-in etch mask, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes metal foil portions in alignment with corresponding ones of the alternating N-type and P-type semiconductor regions. A patterned wet etchant-resistant polymer layer is disposed on the conductive contact structure. Portions of the patterned wet etchant-resistant polymer layer are disposed on and in alignment with the metal foil portions.

    摘要翻译: 描述了基于留下蚀刻掩模和所得到的太阳能电池来制造基于箔的金属化太阳能电池的方法。 在一个示例中,太阳能电池包括具有背面和相对的光接收表面的基板。 多个交替的N型和P型半导体区域设置在衬底的背面中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域上。 导电接触结构包括与交替的N型和P型半导体区域中的对应的金属箔部分对准的金属箔部分。 图案化的耐湿蚀刻剂聚合物层设置在导电接触结构上。 图案化的耐湿蚀刻剂聚合物层的一部分设置在金属箔部分上并与之对齐。