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    Conditioning Tools and Techniques for Chemical Mechanical Planarization
    1.
    发明申请
    Conditioning Tools and Techniques for Chemical Mechanical Planarization 审中-公开
    化学机械平面化的调节工具和技术

    公开(公告)号：US20120060426A1

    公开(公告)日：2012-03-15

    申请号：US13301276

    申请日：2011-11-21

    申请人： Thomas PUTHANANGADY ,  Taewook Hwang ,  Srinivasan Ramanath ,  Eric M. Schultz ,  J. Gary Baldoni ,  Biljana Buljan ,  Charles Dinh-Ngoc

    发明人： Thomas PUTHANANGADY ,  Taewook Hwang ,  Srinivasan Ramanath ,  Eric M. Schultz ,  J. Gary Baldoni ,  Biljana Buljan ,  Charles Dinh-Ngoc

    IPC分类号： B24D3/06

    CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06 ,  B24D18/00

    摘要： Tools for conditioning chemical mechanical planarization (CMP) pads comprise a substrate with abrasive particles coupled to at least one surface. The tools can have various particle and bond configurations. For instance, abrasive particles may be bonded (e.g., brazed or other metal bond technique) to one side, or to front and back sides. Alternatively, abrasive particles are bonded to a front side, and filler particles coupled to a back side. The abrasive particles can form a pattern (e.g., hexagonal) and have particle sizes that are sufficiently small to penetrate pores of a CMP pad during conditioning, leading to fewer defects on wafers polished with the conditioned CMP pad. Grain bonding can be accomplished using brazing films, although other metal bonds may be used as well. Also, balanced bond material (e.g., braze on both sides) allows for low out-of-flatness value.

    摘要翻译： 用于调理化学机械平面化（CMP）衬垫的工具包括具有与至少一个表面耦合的磨料颗粒的衬底。 这些工具可以具有各种粒子和键结构。 例如，磨料颗粒可以结合（例如钎焊或其他金属粘合技术）到一侧或前后两侧。 或者，磨料颗粒结合到前侧，并且填料颗粒连接到背面。 研磨颗粒可以形成图案（例如六边形），并且具有足够小的粒度以在调理期间穿透CMP垫的孔，导致用经调节的CMP垫抛光的晶片上的缺陷较少。 可以使用钎焊膜来实现晶粒结合，尽管也可以使用其它金属键。 此外，平衡粘合材料（例如，两侧上钎焊）允许低的平坦度值。

    CONDITIONING TOOLS AND TECHNIQUES FOR CHEMICAL MECHANICAL PLANARIZATION
    2.
    发明申请
    CONDITIONING TOOLS AND TECHNIQUES FOR CHEMICAL MECHANICAL PLANARIZATION 审中-公开
    化学机械平面化的工具和技术

    公开(公告)号：US20080271384A1

    公开(公告)日：2008-11-06

    申请号：US11857499

    申请日：2007-09-19

    申请人： Thomas Puthanangady ,  Taewook Hwang ,  Srinivasan Ramanath ,  Eric M. Schultz ,  J. Gary Baldoni ,  Sergej-Tomislav Buljan ,  Charles Dinh-Ngoc

    发明人： Thomas Puthanangady ,  Taewook Hwang ,  Srinivasan Ramanath ,  Eric M. Schultz ,  J. Gary Baldoni ,  Sergej-Tomislav Buljan ,  Charles Dinh-Ngoc

    IPC分类号： C09K3/14 ,  B24D3/06

    CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06 ,  B24D18/00

    摘要： Tools for conditioning chemical mechanical planarization (CMP) pads comprise a substrate with abrasive particles coupled to at least one surface. The tools can have various particle and bond configurations. For instance, abrasive particles may be bonded (e.g., brazed or other metal bond technique) to one side, or to front and back sides. Alternatively, abrasive particles are bonded to a front side, and filler particles coupled to a back side. The abrasive particles can form a pattern (e.g., hexagonal) and have particle sizes that are sufficiently small to penetrate pores of a CMP pad during conditioning, leading to fewer defects on wafers polished with the conditioned CMP pad. Grain bonding can be accomplished using brazing films, although other metal bonds may be used as well. Also, balanced bond material (e.g., braze on both sides) allows for low out-of-flatness value.

    摘要翻译： 用于调理化学机械平面化（CMP）衬垫的工具包括具有与至少一个表面耦合的磨料颗粒的衬底。 这些工具可以具有各种粒子和键结构。 例如，磨料颗粒可以结合（例如钎焊或其他金属粘合技术）到一侧或前后两侧。 或者，磨料颗粒结合到前侧，并且填料颗粒连接到背面。 研磨颗粒可以形成图案（例如六边形），并且具有足够小的粒度以在调理期间穿透CMP垫的孔，导致用经调节的CMP垫抛光的晶片上的缺陷较少。 可以使用钎焊膜来实现晶粒结合，尽管也可以使用其它金属键。 此外，平衡粘合材料（例如，两侧上钎焊）允许低的平坦度值。