利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.015 秒)

    Optimized CMP Conditioner Design for Next Generation Oxide/Metal CMP
    4.
    发明申请
    Optimized CMP Conditioner Design for Next Generation Oxide/Metal CMP 失效
    用于下一代氧化物/金属CMP的优化CMP调节剂设计

    公开(公告)号：US20090053980A1

    公开(公告)日：2009-02-26

    申请号：US12195600

    申请日：2008-08-21

    申请人： Taewook Hwang ,  J. Gary Baldoni ,  Thomas Puthanangady

    发明人： Taewook Hwang ,  J. Gary Baldoni ,  Thomas Puthanangady

    IPC分类号： B24B33/00

    CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06

    摘要： A study of several key conditioner design parameters has been conducted. The purpose was to improve conditioner performance by considering factors such as wafer defects, pad life, and conditioner life. For this study, several key conditioner design parameters such as diamond type, diamond size, diamond shape, diamond concentration and distribution, were selected to determine their effect on CMP performance and process stability. Experimental validations were conducted. Conditioner specifications were matched to each specific CMP environment (intended application) in order to improve process stability and CMP performance particularly for emerging technology nodes. Several conditioner designs were developed and run successfully in the field. Significant planarity improvement for a 300 mm CMP process was achieved in accordance with one embodiment, and an increase of pad life and wafer polish rate was simultaneously achieved with another embodiment.

    摘要翻译： 已经对几个关键的调节器设计参数进行了研究。 其目的是通过考虑诸如晶片缺陷，垫寿命和调理剂寿命等因素来改善调节剂性能。 对于这项研究，选择了几种关键的调节器设计参数，如钻石类型，金刚石尺寸，菱形，金刚石浓度和分布，以确定其对CMP性能和工艺稳定性的影响。 进行实验验证。 调节器规格与每个特定CMP环境（预期应用）匹配，以提高工艺稳定性和CMP性能，特别是对于新兴技术节点。 在现场开发并运行了几种护发素设计。 根据一个实施例，实现300mm CMP工艺的显着的平面度改进，并且另一实施例同时实现焊盘寿命和晶片抛光速率的增加。

    Optimized CMP conditioner design for next generation oxide/metal CMP
    5.
    发明授权
    Optimized CMP conditioner design for next generation oxide/metal CMP 失效
    用于下一代氧化物/金属CMP的优化CMP调整剂设计

    公开(公告)号：US08657652B2

    公开(公告)日：2014-02-25

    申请号：US12195600

    申请日：2008-08-21

    申请人： Taewook Hwang ,  J. Gary Baldoni ,  Thomas Puthanangady

    发明人： Taewook Hwang ,  J. Gary Baldoni ,  Thomas Puthanangady

    IPC分类号： B24B53/00

    CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06

    摘要： A study of several key conditioner design parameters has been conducted. The purpose was to improve conditioner performance by considering factors such as wafer defects, pad life, and conditioner life. For this study, several key conditioner design parameters such as diamond type, diamond size, diamond shape, diamond concentration and distribution, were selected to determine their effect on CMP performance and process stability. Experimental validations were conducted. Conditioner specifications were matched to each specific CMP environment (intended application) in order to improve process stability and CMP performance particularly for emerging technology nodes. Several conditioner designs were developed and run successfully in the field. Significant planarity improvement for a 300 mm CMP process was achieved in accordance with one embodiment, and an increase of pad life and wafer polish rate was simultaneously achieved with another embodiment.

    摘要翻译： 已经对几个关键的调节器设计参数进行了研究。 其目的是通过考虑诸如晶片缺陷，垫寿命和调理剂寿命等因素来改善调节剂性能。 对于这项研究，选择了几种关键的调节器设计参数，如钻石类型，金刚石尺寸，菱形，金刚石浓度和分布，以确定其对CMP性能和工艺稳定性的影响。 进行实验验证。 调节器规格与每个特定CMP环境（预期应用）匹配，以提高工艺稳定性和CMP性能，特别是对于新兴技术节点。 在现场开发并运行了几种护发素设计。 根据一个实施例，实现300mm CMP工艺的显着的平面度改进，并且另一实施例同时实现焊盘寿命和晶片抛光速率的增加。

    CONDITIONING TOOLS AND TECHNIQUES FOR CHEMICAL MECHANICAL PLANARIZATION
    8.
    发明申请
    CONDITIONING TOOLS AND TECHNIQUES FOR CHEMICAL MECHANICAL PLANARIZATION 审中-公开
    化学机械平面化的工具和技术

    公开(公告)号：US20080271384A1

    公开(公告)日：2008-11-06

    申请号：US11857499

    申请日：2007-09-19

    申请人： Thomas Puthanangady ,  Taewook Hwang ,  Srinivasan Ramanath ,  Eric M. Schultz ,  J. Gary Baldoni ,  Sergej-Tomislav Buljan ,  Charles Dinh-Ngoc

    发明人： Thomas Puthanangady ,  Taewook Hwang ,  Srinivasan Ramanath ,  Eric M. Schultz ,  J. Gary Baldoni ,  Sergej-Tomislav Buljan ,  Charles Dinh-Ngoc

    IPC分类号： C09K3/14 ,  B24D3/06

    CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06 ,  B24D18/00

    摘要： Tools for conditioning chemical mechanical planarization (CMP) pads comprise a substrate with abrasive particles coupled to at least one surface. The tools can have various particle and bond configurations. For instance, abrasive particles may be bonded (e.g., brazed or other metal bond technique) to one side, or to front and back sides. Alternatively, abrasive particles are bonded to a front side, and filler particles coupled to a back side. The abrasive particles can form a pattern (e.g., hexagonal) and have particle sizes that are sufficiently small to penetrate pores of a CMP pad during conditioning, leading to fewer defects on wafers polished with the conditioned CMP pad. Grain bonding can be accomplished using brazing films, although other metal bonds may be used as well. Also, balanced bond material (e.g., braze on both sides) allows for low out-of-flatness value.

    摘要翻译： 用于调理化学机械平面化（CMP）衬垫的工具包括具有与至少一个表面耦合的磨料颗粒的衬底。 这些工具可以具有各种粒子和键结构。 例如，磨料颗粒可以结合（例如钎焊或其他金属粘合技术）到一侧或前后两侧。 或者，磨料颗粒结合到前侧，并且填料颗粒连接到背面。 研磨颗粒可以形成图案（例如六边形），并且具有足够小的粒度以在调理期间穿透CMP垫的孔，导致用经调节的CMP垫抛光的晶片上的缺陷较少。 可以使用钎焊膜来实现晶粒结合，尽管也可以使用其它金属键。 此外，平衡粘合材料（例如，两侧上钎焊）允许低的平坦度值。

    Conditioning Tools and Techniques for Chemical Mechanical Planarization
    10.
    发明申请
    Conditioning Tools and Techniques for Chemical Mechanical Planarization 审中-公开
    化学机械平面化的调节工具和技术

    公开(公告)号：US20120060426A1

    公开(公告)日：2012-03-15

    申请号：US13301276

    申请日：2011-11-21

    申请人： Thomas PUTHANANGADY ,  Taewook Hwang ,  Srinivasan Ramanath ,  Eric M. Schultz ,  J. Gary Baldoni ,  Biljana Buljan ,  Charles Dinh-Ngoc

    发明人： Thomas PUTHANANGADY ,  Taewook Hwang ,  Srinivasan Ramanath ,  Eric M. Schultz ,  J. Gary Baldoni ,  Biljana Buljan ,  Charles Dinh-Ngoc

    IPC分类号： B24D3/06

    CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06 ,  B24D18/00

    摘要： Tools for conditioning chemical mechanical planarization (CMP) pads comprise a substrate with abrasive particles coupled to at least one surface. The tools can have various particle and bond configurations. For instance, abrasive particles may be bonded (e.g., brazed or other metal bond technique) to one side, or to front and back sides. Alternatively, abrasive particles are bonded to a front side, and filler particles coupled to a back side. The abrasive particles can form a pattern (e.g., hexagonal) and have particle sizes that are sufficiently small to penetrate pores of a CMP pad during conditioning, leading to fewer defects on wafers polished with the conditioned CMP pad. Grain bonding can be accomplished using brazing films, although other metal bonds may be used as well. Also, balanced bond material (e.g., braze on both sides) allows for low out-of-flatness value.

    摘要翻译： 用于调理化学机械平面化（CMP）衬垫的工具包括具有与至少一个表面耦合的磨料颗粒的衬底。 这些工具可以具有各种粒子和键结构。 例如，磨料颗粒可以结合（例如钎焊或其他金属粘合技术）到一侧或前后两侧。 或者，磨料颗粒结合到前侧，并且填料颗粒连接到背面。 研磨颗粒可以形成图案（例如六边形），并且具有足够小的粒度以在调理期间穿透CMP垫的孔，导致用经调节的CMP垫抛光的晶片上的缺陷较少。 可以使用钎焊膜来实现晶粒结合，尽管也可以使用其它金属键。 此外，平衡粘合材料（例如，两侧上钎焊）允许低的平坦度值。