公开(公告)号：US20100038789A1

公开(公告)日：2010-02-18

申请号：US12190906

申请日：2008-08-13

申请人： Tien-Jen Cheng ,  Zhengwen Li ,  Keith Kwong Hon Wong ,  Huilong Zhu

发明人： Tien-Jen Cheng ,  Zhengwen Li ,  Keith Kwong Hon Wong ,  Huilong Zhu

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76877 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dielectric layer is patterned with at least one line trough and/or at least one via cavity. A metallic nitride liner is formed on the surfaces of the patterned dielectric layer. A metal liner is formed on the surface of the metallic nitride liner. A conformal copper nitride layer is formed directly on the metal liner by atomic layer deposition (ALD) or chemical vapor deposition (CVD). A Cu seed layer is formed directly on the conformal copper nitride layer. The at least one line trough and/or the at least one via cavity are filled with an electroplated material. The direct contact between the conformal copper nitride layer and the Cu seed layer provides enhanced adhesion strength. The conformal copper nitride layer may be annealed to covert an exposed outer portion into a contiguous Cu layer, which may be employed to reduce the thickness of the Cu seed layer.

摘要翻译： 用至少一个线槽和/或至少一个通孔腔对电介质层进行构图。 金属氮化物衬垫形成在图案化电介质层的表面上。 在金属氮化物衬垫的表面上形成金属衬垫。 通过原子层沉积（ALD）或化学气相沉积（CVD）直接在金属衬垫上形成共形的氮化铜层。 在适形的氮化铜层上直接形成Cu籽晶层。 至少一个线槽和/或至少一个通孔腔被电镀材料填充。 保形氮化铜层和Cu籽晶层之间的直接接触提供了增强的粘合强度。 可以将共形的氮化铜层退火以将暴露的外部部分翻转成连续的Cu层，其可用于减小Cu籽晶层的厚度。

公开(公告)号：US08105937B2

公开(公告)日：2012-01-31

申请号：US12190906

申请日：2008-08-13

申请人： Tien-Jen Cheng ,  Zhengwen Li ,  Keith Kwong Hon Wong ,  Huilong Zhu

发明人： Tien-Jen Cheng ,  Zhengwen Li ,  Keith Kwong Hon Wong ,  Huilong Zhu

IPC分类号： H01L21/44

CPC分类号： H01L23/53238 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76877 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dielectric layer is patterned with at least one line trough and/or at least one via cavity. A metallic nitride liner is formed on the surfaces of the patterned dielectric layer. A metal liner is formed on the surface of the metallic nitride liner. A conformal copper nitride layer is formed directly on the metal liner by atomic layer deposition (ALD) or chemical vapor deposition (CVD). A Cu seed layer is formed directly on the conformal copper nitride layer. The at least one line trough and/or the at least one via cavity are filled with an electroplated material. The direct contact between the conformal copper nitride layer and the Cu seed layer provides enhanced adhesion strength. The conformal copper nitride layer may be annealed to covert an exposed outer portion into a contiguous Cu layer, which may be employed to reduce the thickness of the Cu seed layer.

摘要翻译： 用至少一个线槽和/或至少一个通孔腔对电介质层进行构图。 金属氮化物衬垫形成在图案化电介质层的表面上。 在金属氮化物衬垫的表面上形成金属衬垫。 通过原子层沉积（ALD）或化学气相沉积（CVD）直接在金属衬垫上形成共形的氮化铜层。 在适形的氮化铜层上直接形成Cu籽晶层。 至少一个线槽和/或至少一个通孔腔被电镀材料填充。 保形氮化铜层和Cu籽晶层之间的直接接触提供了增强的粘合强度。 可以将共形的氮化铜层退火以将暴露的外部部分翻转成连续的Cu层，其可用于减小Cu籽晶层的厚度。

公开(公告)号：US08444868B2

公开(公告)日：2013-05-21

申请号：US12695273

申请日：2010-01-28

申请人： Tien-Jen Cheng ,  Stephan Grunow ,  Zhengwen Li ,  Huilong Zhu

发明人： Tien-Jen Cheng ,  Stephan Grunow ,  Zhengwen Li ,  Huilong Zhu

IPC分类号： C23F1/00

CPC分类号： H01L21/02074 ,  C23G5/00

摘要： The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper oxide thereon to an anhydrous vapor containing a carboxylic acid compound therein, wherein the anhydrous vapor is generated from an anhydrous organic solution containing the carboxylic acid and one or more solvents selected from hydrocarbon and ether solvents.

摘要翻译： 本发明涉及从铜表面去除氧化铜以提供清洁的铜表面的方法，其中所述方法包括将含有氧化铜的铜表面暴露于其中含有羧酸化合物的无水蒸气，其中无水蒸气为 由含有羧酸的无水有机溶液和选自烃和醚溶剂的一种或多种溶剂产生。

公开(公告)号：US20110183520A1

公开(公告)日：2011-07-28

申请号：US12695273

申请日：2010-01-28

申请人： Tien-Jen Cheng ,  Stephan Grunow ,  Zhengwen Li ,  Huilong Zhu

发明人： Tien-Jen Cheng ,  Stephan Grunow ,  Zhengwen Li ,  Huilong Zhu

IPC分类号： H01L21/306

CPC分类号： H01L21/02074 ,  C23G5/00

摘要： The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper oxide thereon to an anhydrous vapor containing a carboxylic acid compound therein, wherein the anhydrous vapor is generated from an anhydrous organic solution containing the carboxylic acid and one or more solvents selected from hydrocarbon and ether solvents.

摘要翻译： 本发明涉及从铜表面去除氧化铜以提供清洁的铜表面的方法，其中所述方法包括将含有氧化铜的铜表面暴露于其中含有羧酸化合物的无水蒸气，其中无水蒸气为 由含有羧酸的无水有机溶液和选自烃和醚溶剂的一种或多种溶剂产生。

公开(公告)号：US20110162875A1

公开(公告)日：2011-07-07

申请号：US12683857

申请日：2010-01-07

申请人： Tien-Jen Cheng ,  Abhishek Dube ,  Zhengwen Li ,  Huilong Zhu

发明人： Tien-Jen Cheng ,  Abhishek Dube ,  Zhengwen Li ,  Huilong Zhu

IPC分类号： H05K1/09 ,  B05D5/12

CPC分类号： H01L21/76834 ,  H01L21/76826 ,  H01L21/76832 ,  H05K3/282 ,  H05K3/388 ,  H05K3/4682

摘要： A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.

摘要翻译： 金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度，其仅选择性地沉积在暴露的铜表面上。 下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。 在形成含铜结构的平坦化工艺之后，将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。 该材料仅选择性地沉积在暴露的Cu表面上，从而形成自对准的铜封装层，并且对下面的铜表面提供高粘附强度。 随后可以在铜封装层上形成电介质盖层和上层金属互连结构。

公开(公告)号：US08415252B2

公开(公告)日：2013-04-09

申请号：US12683857

申请日：2010-01-07

申请人： Tien-Jen Cheng ,  Abhishek Dube ,  Zhengwen Li ,  Huilong Zhu

发明人： Tien-Jen Cheng ,  Abhishek Dube ,  Zhengwen Li ,  Huilong Zhu

IPC分类号： H01L21/44

CPC分类号： H01L21/76834 ,  H01L21/76826 ,  H01L21/76832 ,  H05K3/282 ,  H05K3/388 ,  H05K3/4682

摘要： A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.

摘要翻译： 金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度，其仅选择性地沉积在暴露的铜表面上。 下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。 在形成含铜结构的平坦化工艺之后，将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。 该材料仅选择性地沉积在暴露的Cu表面上，从而形成自对准的铜封装层，并且对下面的铜表面提供高粘附强度。 随后可以在铜封装层上形成电介质盖层和上层金属互连结构。

公开(公告)号：US08841777B2

公开(公告)日：2014-09-23

申请号：US12685954

申请日：2010-01-12

申请人： Mukta G. Farooq ,  Zhengwen Li ,  Zhijiong Luo ,  Huilong Zhu

发明人： Mukta G. Farooq ,  Zhengwen Li ,  Zhijiong Luo ,  Huilong Zhu

IPC分类号： H01L21/48 ,  H01L21/52 ,  H01L21/40 ,  H01L21/20 ,  H01L27/06 ,  H01L21/768

CPC分类号： H01L21/76841 ,  H01L21/2007 ,  H01L27/0688 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896

摘要： Vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with vertical stacks of a metal portion and a semiconductor portion formed on a second substrate. Alternately, vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with metal portions formed on a second substrate. The assembly of the first and second substrates is subjected to an anneal at a temperature that induces formation of a metal semiconductor alloy derived from the semiconductor portions and the metal portions. The first substrate and the second substrate are bonded through metal semiconductor alloy portions that adhere to the first and second substrates.

摘要翻译： 形成在第一基板上的金属部分和半导体部分的垂直叠层与形成在第二基板上的金属部分和半导体部分的垂直叠层物理接触。 或者，形成在第一基板上的金属部分和半导体部分的垂直堆叠与形成在第二基板上的金属部分物理接触。 在引起由半导体部分和金属部分衍生的金属半导体合金的形成的温度下对第一和第二基板的组装进行退火。 第一基板和第二基板通过粘附到第一和第二基板的金属半导体合金部分接合。

公开(公告)号：US08723021B2

公开(公告)日：2014-05-13

申请号：US13416354

申请日：2012-03-09

申请人： Harold J. Hovel ,  Rainer K. Krause ,  Zhengwen Li ,  Huilong Zhu

发明人： Harold J. Hovel ,  Rainer K. Krause ,  Zhengwen Li ,  Huilong Zhu

IPC分类号： H01L31/032

CPC分类号： G02B1/113 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes a substrate having an N-region and a P-region, a first anti-reflective layer disposed on the substrate, a metallic contact disposed on the first anti-reflective layer, a second anti-reflective layer disposed on the first anti-reflective layer and the metallic contact, and a region partially defined by the first anti-reflective layer and the second anti-reflective layer having diffused metallic contact material operative to form a conductive path to the substrate through the first anti-reflective layer, the metallic contact, and the second anti-reflective layer.

摘要翻译： 太阳能电池包括具有N区和P区的衬底，设置在衬底上的第一抗反射层，设置在第一抗反射层上的金属触点，设置在第一抗反射层上的第二抗反射层 抗反射层和金属接触，以及由第一抗反射层和第二抗反射层局部限定的区域，其具有扩散的金属接触材料，其可操作以通过第一抗反射层形成到衬底的导电路径， 金属触点和第二抗反射层。

公开(公告)号：US08294027B2

公开(公告)日：2012-10-23

申请号：US12689464

申请日：2010-01-19

申请人： Harold J. Hovel ,  Rainer K. Krause ,  Zhengwen Li ,  Huilong Zhu

发明人： Harold J. Hovel ,  Rainer K. Krause ,  Zhengwen Li ,  Huilong Zhu

IPC分类号： H01L31/04 ,  B05D5/12

CPC分类号： G02B1/113 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a cell structure includes doping a substrate to form a N-region and a P-region, disposing a first anti-reflective layer on the substrate, disposing a metallic contact paste on the first anti-reflective layer, drying the metallic contact paste to form contacts, disposing a second anti-reflective layer on the first anti-reflective layer and the metallic contacts, and heating the cell structure, wherein heating the cell structure results in metallic contact material penetrating the first anti-reflective layer and contacting the substrate.

摘要翻译： 一种电池结构的制造方法，其特征在于，在衬底上掺杂形成N区和P区，在所述衬底上设置第一抗反射层，在所述第一抗反射层上设置金属接触膏，干燥所述金属 接触膏以形成接触，在第一抗反射层和金属触点上设置第二抗反射层，并加热电池结构，其中加热电池结构导致金属接触材料穿透第一抗反射层并接触 底物。

公开(公告)号：US20090294873A1

公开(公告)日：2009-12-03

申请号：US12129033

申请日：2008-05-29

申请人： Huilong Zhu ,  Zhengwen Li

发明人： Huilong Zhu ,  Zhengwen Li

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/26586 ,  H01L21/2815 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device, such as a field effect transistor, that includes a spacer shaped metal gate located over a channel within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. Within the semiconductor structure, the plurality of source and drain regions is asymmetric with respect to the spacer shaped metal gate. The particular semiconductor structure may be fabricated using a self aligned dummy gate method that uses a portion of a spacer as a self alignment feature when forming the spacer shaped metal gate, which may have a sub-lithographic linewidth.

摘要翻译： 半导体结构和半导体结构的制造方法提供场效应晶体管等场效应晶体管，该场效应晶体管包括位于半导体衬底内的通道之间的间隔金属栅极，该隔离物形金属栅极将多个源极和漏极区域分隔开， 半导体衬底。 在半导体结构内，多个源极和漏极区域相对于间隔物金属栅极是不对称的。 可以使用自对准的虚拟栅极方法来制造特定的半导体结构，该方法在形成可具有亚光刻线宽的间隔物金属栅极时，使用间隔物的一部分作为自对准特征。