公开(公告)号：US4914006A

公开(公告)日：1990-04-03

申请号：US178848

申请日：1988-04-04

申请人： Tiharu Kato ,  Kazuyuki Saito ,  Norio Ishikawa ,  Kiyoto Mori

发明人： Tiharu Kato ,  Kazuyuki Saito ,  Norio Ishikawa ,  Kiyoto Mori

IPC分类号： H01L21/30 ,  G03C1/72 ,  G03F7/00 ,  G03F7/30 ,  G03F7/32 ,  H01L21/027

CPC分类号： G03F7/322

摘要： A positive resist developer comprising a solution containing a quaternary ammonium hydroxide, a cationic surfactant and a nonionic surfactant.

摘要翻译： 一种正性抗蚀剂显影剂，其包含含有季铵氢氧化物，阳离子表面活性剂和非离子表面活性剂的溶液。

公开(公告)号：US4525523A

公开(公告)日：1985-06-25

申请号：US526820

申请日：1983-08-26

申请人： Hatsuo Nakamura ,  Tiharu Kato ,  Toshio Yonezawa ,  Shigeo Koguchi ,  Kiyoto Mori ,  Masahiko Igarashi

发明人： Hatsuo Nakamura ,  Tiharu Kato ,  Toshio Yonezawa ,  Shigeo Koguchi ,  Kiyoto Mori ,  Masahiko Igarashi

IPC分类号： G03F7/008 ,  C08K5/28 ,  G03F7/012 ,  C08L9/00

CPC分类号： G03F7/0125 ,  C08K5/28

摘要： There is proposed a negative-working photoresist coating composition of an improved resolution, which comprises a cyclized polyisoprene having a weight-average molecular weight of 10,000 to 100,000 and a molecular weight distribution of not more than 1.9, an organic solvent of the cyclized polyisoprene, and a bisazido compound as a crosslinking agent.

摘要翻译： 提出了一种改进分辨率的负性光致抗蚀剂涂料组合物，其包含重均分子量为10,000至100,000，分子量分布不大于1.9的环化聚异戊二烯，环化聚异戊二烯的有机溶剂， 和作为交联剂的双叠氮化合物。

公开(公告)号：US06877518B2

公开(公告)日：2005-04-12

申请号：US10309132

申请日：2002-12-04

申请人： Kaori Watanabe ,  Hidemitsu Aoki ,  Norio Ishikawa ,  Kiyoto Mori

发明人： Kaori Watanabe ,  Hidemitsu Aoki ,  Norio Ishikawa ,  Kiyoto Mori

IPC分类号： C23F1/08 ,  C23F1/30 ,  H01L21/00 ,  H01L21/304 ,  B08B15/00

CPC分类号： H01L21/6708 ,  Y10S134/902

摘要： A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment unit comprises a chemical solution supplying nozzle, and a recovering mechanism. The reservior unit has a structure having a clearence part to be in contact with the chemical solution so that gas components derived from the ruthenium-based metal dissolved and removed in said chemical solution treatment are volatilized outside the chemical solution during circulation of the chemical solution, and comprises an exhaust duct.

摘要翻译： 一种用于通过化学溶液溶解和去除附着在基底上的钌基金属的化学溶液处理设备，包括：化学溶液处理单元; 水库单元; 和化学溶液循环系统。 处理单元中的化学溶液包括化学溶液供应喷嘴和回收机构。 储液器单元具有与化学溶液接触的清洁部分的结构，使得在所述化学溶液处理中溶解和除去的衍生自钌基金属的气体成分在化学溶液循环期间在化学溶液的外部挥发， 并且包括排气管。

公开(公告)号：US07507350B2

公开(公告)日：2009-03-24

申请号：US11128622

申请日：2005-05-13

申请人： Norio Ishikawa ,  Kiyoto Mori

发明人： Norio Ishikawa ,  Kiyoto Mori

IPC分类号： C09K13/00

CPC分类号： H01L31/1884 ,  C09K13/00 ,  H01L21/32134 ,  Y02E10/50

摘要： The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block copolymers.

公开(公告)号：US07084097B2

公开(公告)日：2006-08-01

申请号：US10783837

申请日：2004-02-19

申请人： Norio Ishikawa ,  Yumiko Abe ,  Kiyoto Mori

发明人： Norio Ishikawa ,  Yumiko Abe ,  Kiyoto Mori

IPC分类号： C11D1/00

CPC分类号： H05K3/26 ,  C11D3/2075 ,  C11D11/0047 ,  H01L21/02063 ,  H05K2201/0761 ,  H05K2203/122

摘要： The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials.The cleaning solution for cleaning substrates of electronic materials comprises an organic acid compound and at least one selected from the group consisting of dispersants and surfactants.

摘要翻译： 本发明涉及能够在不腐蚀金属材料的同时从基材表面高效除去颗粒和金属杂质的清洗溶液。 用于清洁电子材料基材的清洁溶液包括有机酸化合物和选自分散剂和表面活性剂中的至少一种。

公开(公告)号：US06730644B1

公开(公告)日：2004-05-04

申请号：US09550152

申请日：2000-04-17

申请人： Norio Ishikawa ,  Yumiko Abe ,  Kiyoto Mori

发明人： Norio Ishikawa ,  Yumiko Abe ,  Kiyoto Mori

IPC分类号： C11D102

CPC分类号： H05K3/26 ,  C11D3/2075 ,  C11D11/0047 ,  H01L21/02063 ,  H05K2201/0761 ,  H05K2203/122

摘要： The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials. The cleaning solution for cleaning substrates of electronic materials comprises an organic acid compound and at least one selected from the group consisting of dispersants and surfactants.

摘要翻译： 本发明涉及能够在没有腐蚀金属材料的情况下有效地从基材表面除去颗粒和金属杂质的清洗溶液。用于清洁电子材料的基材的清洁溶液包括有机酸化合物和选自以下的至少一种： 由分散剂和表面活性剂组成的组。

公开(公告)号：US20050209119A1

公开(公告)日：2005-09-22

申请号：US11128622

申请日：2005-05-13

申请人： Norio Ishikawa ,  Kiyoto Mori

发明人： Norio Ishikawa ,  Kiyoto Mori

IPC分类号： C23F1/14 ,  C09K13/00 ,  H01L21/3213 ,  H01L31/18 ,  C11D1/00

CPC分类号： H01L31/1884 ,  C09K13/00 ,  H01L21/32134 ,  Y02E10/50

摘要： The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block copolymers.

公开(公告)号：US06231677B1

公开(公告)日：2001-05-15

申请号：US09255537

申请日：1999-02-22

申请人： Norio Ishikawa ,  Masanori Suga ,  Kiyoto Mori

发明人： Norio Ishikawa ,  Masanori Suga ,  Kiyoto Mori

IPC分类号： C23G102

CPC分类号： G03F7/42

摘要： A photoresist stripping liquid composition effective for removing resist residues after dry etching and resist ashing in the manufacturing processes of semiconductor devices, which does not corrode the different metallic materials, and wherein are comprised, as active component, one or more polycarboxylic acids and/or their salts selected from the group consisting of aliphatic polycarboxylic acids and their salts as well as aminopolycarboxylic acids and their salts.

摘要翻译： 一种光致抗蚀剂剥离液体组合物，其有效用于在不腐蚀不同金属材料的半导体器件的制造工艺中干蚀刻后除去抗蚀剂残留物并抵抗灰化，并且其中作为活性组分包含一种或多种多元羧酸和/或 它们的盐选自脂族多元羧酸及其盐以及氨基多羧酸及其盐。

公开(公告)号：US06914039B2

公开(公告)日：2005-07-05

申请号：US09947483

申请日：2001-09-06

申请人： Norio Ishikawa ,  Kiyoto Mori

发明人： Norio Ishikawa ,  Kiyoto Mori

IPC分类号： C23F1/14 ,  C09K13/00 ,  H01L21/3213 ,  H01L31/18 ,  C11D7/50 ,  B08B3/08 ,  H01L21/306

CPC分类号： H01L31/1884 ,  C09K13/00 ,  H01L21/32134 ,  Y02E10/50

摘要： The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block copolymers.

摘要翻译： 本发明提供了用于透明导电膜的蚀刻液体组合物，其中发泡被抑制并且蚀刻后不发生残留物。 蚀刻液组合物包括用于透明导电膜的蚀刻液和一种或多种选自聚磺酸化合物和聚氧乙烯 - 聚氧丙烯嵌段共聚物的化合物。

公开(公告)号：US06468357B1

公开(公告)日：2002-10-22

申请号：US10123197

申请日：2002-04-17

申请人： Hidemitsu Aoki ,  Kaori Watanabe ,  Norio Ishikawa ,  Kiyoto Mori

发明人： Hidemitsu Aoki ,  Kaori Watanabe ,  Norio Ishikawa ,  Kiyoto Mori

IPC分类号： C23G102

CPC分类号： H01L21/32134 ,  C23F1/30 ,  Y10S134/902

摘要： A method for removing a ruthenium-containing metal includes the step of applying a remover to a semiconductor substrate. The remover includes a cerium (IV) nitrate salt and nitric acid.

摘要翻译： 一种除去含钌金属的方法包括向半导体衬底施加去除剂的步骤。 去除剂包括硝酸铈（IV）盐和硝酸。