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公开(公告)号：US08166827B2
公开(公告)日：2012-05-01
申请号：US12436374
申请日：2009-05-06
Applicant: Yuichi Miyoshi , Tohru Yamaoka , Hidenori Notake , Yusuke Takeuchi
Inventor： Yuichi Miyoshi , Tohru Yamaoka , Hidenori Notake , Yusuke Takeuchi
IPC: G01L9/06
CPC classification number: B81C1/00158 , B81B2201/0257 , B81C2201/0133 , G01P15/0802 , G01P15/097 , G01P15/123
Abstract: A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.
Abstract translation: 一种MEMS器件，包括：具有第一主平面和与第一主平面相对的第二主平面的衬底; 形成在基板中的通孔; 以及形成在所述第一主平面上以覆盖所述通孔的振动膜。 第一主平面和第二主平面都是（110）晶面; 并且通孔在第二主平面上具有基本上菱形的形状。
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公开(公告)号：US20110042763A1
公开(公告)日：2011-02-24
申请号：US12938007
申请日：2010-11-02
Applicant: Tohru YAMAOKA , Yuichi Miyoshi
Inventor： Tohru YAMAOKA , Yuichi Miyoshi
IPC: H01L29/84
CPC classification number: H04R19/005 , B81B3/0086 , B81B2201/0257 , H04R19/016 , H04R19/04 , H04R2410/03
Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.
Abstract translation: MEMS器件包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的振动膜和位于振动膜上方的固定膜，其间夹有气隙。 半导体衬底具有包含N型多数载流子的区域。 在半导体衬底与第一绝缘膜接触的半导体衬底的一部分中的N型多数载流子的浓度高于半导体衬底的另一部分中的N型多数载流子的浓度。
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公开(公告)号：US07847359B2
公开(公告)日：2010-12-07
申请号：US12622975
申请日：2009-11-20
Applicant: Tohru Yamaoka , Yuichi Miyoshi
Inventor： Tohru Yamaoka , Yuichi Miyoshi
CPC classification number: H04R19/005 , B81B3/0086 , B81B2201/0257 , H04R19/016 , H04R19/04 , H04R2410/03
Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.
Abstract translation: MEMS器件包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的振动膜和位于振动膜上方的固定膜，其间夹有气隙。 半导体衬底具有包含N型多数载流子的区域。 在半导体衬底与第一绝缘膜接触的半导体衬底的一部分中的N型多数载流子的浓度高于半导体衬底的另一部分中的N型多数载流子的浓度。
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公开(公告)号：US20100065932A1
公开(公告)日：2010-03-18
申请号：US12622975
申请日：2009-11-20
Applicant: Tohru Yamaoka , Yuichi Miyoshi
Inventor： Tohru Yamaoka , Yuichi Miyoshi
IPC: H01L29/84
CPC classification number: H04R19/005 , B81B3/0086 , B81B2201/0257 , H04R19/016 , H04R19/04 , H04R2410/03
Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.
Abstract translation: MEMS器件包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的振动膜和位于振动膜上方的固定膜，其间夹有气隙。 半导体衬底具有包含N型多数载流子的区域。 在半导体衬底与第一绝缘膜接触的半导体衬底的一部分中的N型多数载流子的浓度高于半导体衬底的另一部分中的N型多数载流子的浓度。
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公开(公告)号：US20070029894A1
公开(公告)日：2007-02-08
申请号：US10576518
申请日：2004-11-12
Applicant: Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi , Tomoyuki Sasaki
Inventor： Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi , Tomoyuki Sasaki
IPC: H01L41/00
CPC classification number: H01G5/0136 , H01G5/16 , H01G7/025 , H04R19/016 , H04R2499/11
Abstract: A silicon nitride film (103) and a silicon nitride film (106) are formed to cover a charged silicon oxide film (105) serving as an electret.
Abstract translation: 形成氮化硅膜（103）和氮化硅膜（106），以覆盖用作驻极体的带电氧化硅膜（105）。
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Patent Agency Ranking
公开(公告)号：US20110044480A1
公开(公告)日：2011-02-24
申请号：US12939748
申请日：2010-11-04
Applicant: Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi
Inventor： Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi
IPC: H04R19/01
CPC classification number: H04R19/016 , B81B2201/0257 , B81C1/00944 , B81C2201/112 , H04R19/005
Abstract: An electret condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electret film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.
Abstract translation: 驻极体电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为驻极体膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。
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公开(公告)号：US07853027B2
公开(公告)日：2010-12-14
申请号：US10591597
申请日：2005-02-07
Applicant: Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi
Inventor： Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi
IPC: H04R25/00
CPC classification number: H04R19/016 , B81B2201/0257 , B81C1/00944 , B81C2201/112 , H04R19/005
Abstract: An electric condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electric film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.
Abstract translation: 电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为电膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。
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公开(公告)号：US20070189555A1
公开(公告)日：2007-08-16
申请号：US10591597
申请日：2005-02-07
Applicant: Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi
Inventor： Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi
IPC: H04R25/00
CPC classification number: H04R19/016 , B81B2201/0257 , B81C1/00944 , B81C2201/112 , H04R19/005
Abstract: An electric condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electric film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.
Abstract translation: 电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为电膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109。 在气隙109中暴露的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。
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公开(公告)号：US08320589B2
公开(公告)日：2012-11-27
申请号：US12939748
申请日：2010-11-04
Applicant: Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi
Inventor： Tohru Yamaoka , Hiroshi Ogura , Yuichi Miyoshi
IPC: H04R25/00
CPC classification number: H04R19/016 , B81B2201/0257 , B81C1/00944 , B81C2201/112 , H04R19/005
Abstract: An electret condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electret film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.
Abstract translation: 驻极体电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为驻极体膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。
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公开(公告)号：US08146437B2
公开(公告)日：2012-04-03
申请号：US12630179
申请日：2009-12-03
Applicant: Yuichi Miyoshi , Yusuke Takeuchi , Tohru Yamaoka , Hiroshi Ogura
Inventor： Yuichi Miyoshi , Yusuke Takeuchi , Tohru Yamaoka , Hiroshi Ogura
IPC: G01L9/06
CPC classification number: G01L9/0016 , H04R19/005
Abstract: A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.
Abstract translation: 用于MEMS器件的隔膜结构包括形成为从衬底的上表面到底表面穿透的通孔; 以及形成在基板的上表面上以覆盖通孔的振动电极膜。 基板的上表面中的通孔的开口形状基本上是六边形。
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