公开(公告)号：US12165893B2

公开(公告)日：2024-12-10

申请号：US18182716

申请日：2023-03-13

Applicant: Tokyo Electron Limited

Inventor： Norihiko Amikura ,  Masatomo Kita ,  Toshiyuki Makabe ,  Shin Matsuura ,  Nobutaka Sasaki ,  Gyeong min Park

IPC: H01L21/677 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.

公开(公告)号：US10264630B2

公开(公告)日：2019-04-16

申请号：US14630775

申请日：2015-02-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryoichi Yoshida ,  Hiraku Murakami ,  Nobutaka Sasaki

IPC: H05B1/00 ,  H05B7/18 ,  H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.

公开(公告)号：US09818582B2

公开(公告)日：2017-11-14

申请号：US15180672

申请日：2016-06-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiraku Murakami ,  Nobutaka Sasaki ,  Shigeru Senzaki ,  Takanori Banse ,  Hiroshi Tsujimoto ,  Keigo Toyoda

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32477 ,  H01J37/32504

Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.

公开(公告)号：US12165854B2

公开(公告)日：2024-12-10

申请号：US17504523

申请日：2021-10-19

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Sasaki ,  Shin Matsuura ,  Gyeong min Park ,  Toshiki Akama

IPC: H01J37/32 ,  H01L21/683

Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

公开(公告)号：US12027346B2

公开(公告)日：2024-07-02

申请号：US17386464

申请日：2021-07-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobutaka Sasaki ,  Shin Matsuura

IPC: H01J37/32 ,  H01J41/02 ,  H01L21/67

CPC classification number: H01J37/32477 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32651 ,  H01J37/32816 ,  H01J37/32834 ,  H01J41/02 ,  H01L21/67253 ,  H01J2237/166 ,  H01J2237/334

Abstract: A substrate processing apparatus includes a chamber including a processing room for processing of a substrate using an introduced gas and an exhaust room for exhausting the gas in the processing room, a shield member provided near a side wall of the chamber to separate the processing room and the exhaust room and including a hole allowing the processing room and the exhaust room to communicate with each other, the shield member being driven in a vertical direction, and a hollow relay member connected to a pipe connected to an instrument outside the chamber and configured to be driven in a horizontal direction. When the shield member reaches an upper position, the relay member is driven inwardly of the chamber to be connected to the shield member at its inward end to allow the processing room and the pipe to communicate with each other through the hole.

公开(公告)号：US10249478B2

公开(公告)日：2019-04-02

申请号：US14570116

申请日：2014-12-15

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Sasaki ,  Takashi Kitazawa ,  Akihiro Yoshimura

IPC: C23C16/00 ,  H01J37/32

Abstract: A substrate processing apparatus includes a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an exhaust chamber for evacuating the gas in the process chamber, a shield member for separating the process chamber from the exhaust chamber provided in at least a part of a neighborhood of a side wall of the chamber, and a hollow relay member penetrating through the shield member for communicating the chamber with a pipe connected to a pressure gauge outside the chamber. The relay member is configured to receive a first gas flowing from the chamber into the relay member. The first gas has a first conductance. The first conductance is greater than a second conductance of a second gas flowing from the exhaust chamber into a gap between the relay member and the side wall of the chamber.

公开(公告)号：US12191119B2

公开(公告)日：2025-01-07

申请号：US17395529

申请日：2021-08-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobutaka Sasaki

IPC: H01J37/32

Abstract: A substrate processing apparatus includes: a processing chamber configured to execute a processing on a substrate by an introduced gas; an exhaust chamber configured to exhaust a gas existing in the processing chamber; a partition plate having a plurality of gas passing holes for bringing the processing chamber and the exhaust chamber into communication with each other therethrough; a measuring instrument configured to measure a state in the processing chamber; a first pipe configured to connect the processing chamber and the measuring instrument; a second pipe configured to bring the exhaust chamber and the measuring instrument into communication with each other therethrough via a first valve; and a controller, wherein the controller is configured to control the substrate processing apparatus so as to control the first valve.

公开(公告)号：US20150228462A1

公开(公告)日：2015-08-13

申请号：US14426852

申请日：2013-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro Yoshimura ,  Yasushi Masuda ,  Nobutaka Sasaki

IPC: H01J37/32

CPC classification number: H01J37/32834 ,  B01J19/088 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/32458 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32633 ,  H01J37/32715 ,  H01J37/32733 ,  H01L21/6719 ,  H01L21/68785

Abstract: In a plasma processing apparatus, a partition wall connects a mounting table and a bottom wall of a processing chamber. A power feed member is disposed within the space surrounded by the partition wall and connected to the mounting table. A driving frame extends into the space surrounded by the partition wall from the outside of the sidewall of the processing chamber to be connected to the bottom of the mounting table. A driving mechanism is disposed to the outside of the processing chamber to move the driving frame vertically. At the bottom of a gas exhaust space, an annular gas exhaust passageway is defined by the partition wall and the sidewall and bottom wall of the processing chamber. The gas exhaust unit is interconnected to the gas exhaust passageway through a gas exhaust port at the bottom wall of the processing chamber.

Abstract translation: 在等离子体处理装置中，分隔壁连接处理室的安装台和底壁。 供电部件设置在由分隔壁包围并与安装台连接的空间内。 驱动框架从处理室的侧壁的外侧延伸到由分隔壁包围的空间中，以连接到安装台的底部。 驱动机构设置在处理室的外部以使驱动框架垂直移动。 在排气空间的底部，由分隔壁和处理室的侧壁和底壁限定环形排气通道。 排气单元通过处理室底壁处的排气口与排气通道相互连接。