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公开(公告)号：US12176183B2
公开(公告)日：2024-12-24
申请号：US18486220
申请日：2023-10-13
Applicant: Tokyo Electron Limited
Inventor： Barton Lane , Merritt Funk , Yohei Yamazawa , Justin Moses , Chelsea DuBose , Michael Hummel
Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.
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公开(公告)号：US11094507B2
公开(公告)日：2021-08-17
申请号：US16517779
申请日：2019-07-22
Applicant: Tokyo Electron Limited
Inventor： Merritt Funk , Chelsea DuBose , Justin Moses , Kazuki Moyama , Kazushi Kaneko
Abstract: Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.
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公开(公告)号：US20210027992A1
公开(公告)日：2021-01-28
申请号：US16517779
申请日：2019-07-22
Applicant: Tokyo Electron Limited
Inventor： Merritt Funk , Chelsea DuBose , Justin Moses , Kazuki Moyama , Kazushi Kaneko
Abstract: Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.
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公开(公告)号：US20190228950A1
公开(公告)日：2019-07-25
申请号：US15880435
申请日：2018-01-25
Applicant: Tokyo Electron Limited
Inventor： Merritt Funk , Megan Doppel , Kazuki Moyama , Chelsea DuBose , Justin Moses
IPC: H01J37/32 , H01L21/3065
Abstract: Embodiments of method and system for controlling plasma performance are described. In an embodiment a method may include supplying power at a first set of power parameters to a plasma chamber. Additionally, the method may include forming plasma within the plasma chamber using the first set of power parameters. The method may also include measuring power coupling to the plasma at the first set of power parameters. Also, the method may include supplying power at a second set of power parameters to the plasma chamber. The method may additionally include measuring power coupling to the plasma at the second set of power parameters to the plasma. The method may also include adjusting the first set of power parameters based, at least in part, on the measuring of the power coupling at the second set of power parameters.
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公开(公告)号：US12272520B2
公开(公告)日：2025-04-08
申请号：US16506202
申请日：2019-07-09
Applicant: Tokyo Electron Limited
Inventor： Merritt Funk , Peter Ventzek , Alok Ranjan , Barton Lane , Justin Moses , Chelsea DuBose
IPC: H01J37/32 , C23C16/509 , H01L21/67 , H01L21/683
Abstract: In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.
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Patent Agency Ranking
公开(公告)号：US20240038496A1
公开(公告)日：2024-02-01
申请号：US18486220
申请日：2023-10-13
Applicant: Tokyo Electron Limited
Inventor： Barton Lane , Merritt Funk , Yohei Yamazawa , Justin Moses , Chelsea DuBose , Michael Hummel
CPC classification number: H01J37/32174 , G01R29/0878
Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.
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公开(公告)号：US20210013005A1
公开(公告)日：2021-01-14
申请号：US16506202
申请日：2019-07-09
Applicant: Tokyo Electron Limited
Inventor： Merritt Funk , Peter Ventzek , Alok Ranjan , Barton Lane , Justin Moses , Chelsea DuBose
IPC: H01J37/32 , C23C16/509 , H01L21/67 , H01L21/683
Abstract: In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.
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公开(公告)号：US20200273678A1
公开(公告)日：2020-08-27
申请号：US16405244
申请日：2019-05-07
Applicant: Tokyo Electron Limited
Inventor： Merritt Funk , Alok Ranjan , Barton Lane , Peter Ventzek , Justin Moses , Chelsea DuBose
IPC: H01J37/32 , H01L21/67 , G05B19/418
Abstract: Methods and systems are disclosed for focus ring thickness measurement and feedback control within process chambers. For disclosed embodiments, in-chamber sensors measure physical parameters associated with focus rings, and these measurements are used to determine thickness for the focus rings. The thickness determinations can be used to detect when a focus ring should be replaced and can also be used as feedback to adjust the position of the focus rings within the chamber. For one embodiment, measurements from ultrasonic sensors are used to make thickness determinations for focus rings. For further embodiments, these ultrasonic sensors are positioned at end portions of focus ring lift pins. Other sensors can also be used such as capacitive sensors, resistive sensors, and/or other desired sensors. Further variations and implementations can also be achieved using in-chambers sensors to facilitate focus ring thickness determinations.
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公开(公告)号：US20250069852A1
公开(公告)日：2025-02-27
申请号：US18453875
申请日：2023-08-22
Applicant: Tokyo Electron Limited
Inventor： Justin Moses , Merritt Funk , Chelsea DuBose , Barton Lane
IPC: H01J37/32 , H01L21/311
Abstract: A method for multitone plasma processing includes providing a substrate into a plasma processing chamber, igniting a plasma in the plasma processing chamber with a multitone signal, and performing a first plasma process on the substrate with the plasma. The multitone signal includes a first tone and a second tone.
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公开(公告)号：US20240162619A1
公开(公告)日：2024-05-16
申请号：US17985360
申请日：2022-11-11
Applicant: Tokyo Electron Limited
Inventor： Chelsea DuBose , Barton Lane , Merritt Funk , Justin Moses
Abstract: According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonating structure to form a corresponding first resonant circuit operating at a first resonance frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonating structure to form a corresponding second resonant circuit operating at a second resonance frequency. In a first mode of operation, the resonating structure operates as a single resonance antenna. In a second mode of operation, the resonating structure operates as a parallel resonance antenna.
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