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公开(公告)号：US12131888B2
公开(公告)日：2024-10-29
申请号：US17008314
申请日：2020-08-31
发明人： Peter Ventzek , Alok Ranjan
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/67
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01L21/3065 , H01L21/31116 , H01L21/31144 , H01L21/67069 , H01J2237/334
摘要： A method for processing a substrate includes forming a patterned layer over the substrate, the layer including an opening, where a surface of the opening includes a sidewall and a bottom wall. The method includes processing the patterned layer with an anisotropic process by generating a flux of gas clusters over the substrate in a first process chamber, where the gas clusters include radical precursors; exposing the substrate to the flux of gas clusters. The method includes sustaining plasma including ions in a second process chamber; and exposing the substrate to the ions by directing the ions toward the bottom wall of the opening.
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公开(公告)号：US11915910B2
公开(公告)日：2024-02-27
申请号：US17212038
申请日：2021-03-25
发明人： Peter Ventzek , Mitsunori Ohata , Alok Ranjan
IPC分类号： H01J37/32
CPC分类号： H01J37/32045 , H01J37/32174 , H01J37/32449 , H01J37/32715 , H01J2237/2007 , H01J2237/334
摘要： A method of plasma processing includes generating a glow phase of an electropositive plasma in a plasma processing chamber containing a first species, a second species, and a substrate comprising a major surface and generating an electronegative plasma in an afterglow phase of the electropositive plasma in the plasma processing chamber by combining the electrons of the electropositive plasma with atoms or molecules of the second species. The electropositive plasma includes positive ions of the first species and electrons. The electronegative plasma includes the positive ions and negative ions of the second species. The method further includes, in the afterglow phase, cyclically performing steps of generating neutral particles by applying a negative bias voltage at the substrate and applying a non-negative bias voltage at the substrate. The average velocity of the neutral particles is towards and substantially normal to the major surface of the substrate.
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公开(公告)号：US11430643B2
公开(公告)日：2022-08-30
申请号：US17037032
申请日：2020-09-29
摘要： A plasma processing system includes a plasma chamber configured to contain a plasma, a shutter chamber fluidically coupled to the plasma chamber via a first orifice, a mass spectrometer fluidically coupled to the shutter chamber, and a shutter disposed in the shutter chamber between the first orifice and the mass spectrometer in the path of a particle beam. The first orifice is configured to generate the particle beam from the plasma using a pressure differential between the shutter chamber and the plasma chamber. The mass spectrometer includes an ionizer configured to ionize species of the particle beam by sweeping through a range of electron energies in a plurality of energy steps. The shutter is configured to open and close during each of the plurality of energy steps.
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公开(公告)号：US20220102123A1
公开(公告)日：2022-03-31
申请号：US17037032
申请日：2020-09-29
摘要： A plasma processing system includes a plasma chamber configured to contain a plasma, a shutter chamber fluidically coupled to the plasma chamber via a first orifice, a mass spectrometer fluidically coupled to the shutter chamber, and a shutter disposed in the shutter chamber between the first orifice and the mass spectrometer in the path of a particle beam. The first orifice is configured to generate the particle beam from the plasma using a pressure differential between the shutter chamber and the plasma chamber. The mass spectrometer includes an ionizer configured to ionize species of the particle beam by sweeping through a range of electron energies in a plurality of energy steps. The shutter is configured to open and close during each of the plurality of energy steps.
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公开(公告)号：US11158516B2
公开(公告)日：2021-10-26
申请号：US16785260
申请日：2020-02-07
发明人： Alok Ranjan , Peter Ventzek , Mitsunori Ohata
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/683 , H01L21/67 , H01L21/3213
摘要： A plasma processing method includes providing a first source power (SP) pulse to an SP coupling element for a first SP pulse duration to generate plasma in a processing chamber, providing a high frequency bias power (HBP) pulse to a substrate holder disposed in the processing chamber for a HBP pulse duration overlapping the first SP pulse duration, and providing a first low frequency bias power (LBP) pulse to the substrate holder for a first LBP pulse duration not overlapping the first SP pulse duration. The HBP pulse includes an HBP pulse frequency that is greater than 800 kHz. The first LBP pulse includes an LBP pulse frequency that is less than about 800 kHz.
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公开(公告)号：US10910196B1
公开(公告)日：2021-02-02
申请号：US16521340
申请日：2019-07-24
发明人： Peter Ventzek , Alok Ranjan , Mitsunori Ohata , Michael Hummel
IPC分类号： H01J37/32 , H01L21/02 , H01L21/3213
摘要： In one embodiment, a plasma processing system includes a plasma processing chamber, a substrate holder disposed in the plasma processing chamber, a coil disposed over the plasma processing chamber, and a plurality of taps configured to contact the coil at an associated contact region. The plasma processing system is configured to sustain a plasma by selecting a subset of taps from the plurality of taps to apply a power source and a reference potential.
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公开(公告)号：US20200075293A1
公开(公告)日：2020-03-05
申请号：US16221918
申请日：2018-12-17
发明人： Peter Ventzek , Alok Ranjan
IPC分类号： H01J37/32 , H01L21/263
摘要： In an embodiment, a plasma processing system includes a vacuum chamber, a substrate holder configured to hold a substrate to be processed where the substrate holder is disposed in the vacuum chamber. The system further includes an electron source disposed above a peripheral region of the substrate holder, the electron source being configured to generate an electron beam towards the peripheral region of the substrate holder.
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公开(公告)号：US20200058469A1
公开(公告)日：2020-02-20
申请号：US16219535
申请日：2018-12-13
发明人： Alok Ranjan , Peter Ventzek , Mitsunori Ohata
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/67 , H01L21/683
摘要： A plasma processing system includes a vacuum chamber, a first coupling electrode, a substrate holder disposed in the vacuum chamber, a second coupling electrode, and a controller. The substrate holder is configured to support a substrate. The first coupling electrode is configured to provide power for generation of a plasma in the vacuum chamber. The first coupling electrode is further configured to couple source power pulses to the plasma. The second coupling electrode is configured to couple bias power pulses to the substrate. The controller is configured to control a first offset duration between the source power pulses the bias power pulses.
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公开(公告)号：US20230230814A1
公开(公告)日：2023-07-20
申请号：US18189519
申请日：2023-03-24
发明人： Peter Ventzek , Alok Ranjan
IPC分类号： H01J37/32 , H01L21/263
CPC分类号： H01J37/32541 , H01L21/263 , H01J37/32715 , H01J37/32082 , H01J37/32348 , H01J37/3255 , H01J2237/063
摘要： A method of processing includes directing an electron beam comprising ballistic electrons from an electron source towards a peripheral region of a substrate to be processed. The peripheral region surrounds a central region of the substrate. The electron beam may be directed such that the ballistic electrons impinge on the peripheral region and not on the central region of the substrate. The ballistic electrons may stimulate chemical reactions on the substrate. The method may include placing the substrate on a substrate holder disposed within a vacuum chamber. The method may also include generating the electron beam from a plasma in the vacuum chamber. The method may further include processing the substrate with ions from the plasma.
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公开(公告)号：US11688586B2
公开(公告)日：2023-06-27
申请号：US16221918
申请日：2018-12-17
发明人： Peter Ventzek , Alok Ranjan
IPC分类号： H01L21/00 , H01J37/32 , H01L21/263
CPC分类号： H01J37/32541 , H01J37/3255 , H01J37/32082 , H01J37/32348 , H01J37/32715 , H01L21/263 , H01J2237/063
摘要： In an embodiment, a plasma processing system includes a vacuum chamber, a substrate holder configured to hold a substrate to be processed where the substrate holder is disposed in the vacuum chamber. The system further includes an electron source disposed above a peripheral region of the substrate holder, the electron source being configured to generate an electron beam towards the peripheral region of the substrate holder.
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