公开(公告)号：US20160379897A1

公开(公告)日：2016-12-29

申请号：US15191599

申请日：2016-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuteru OBARA ,  Koji YOSHII ,  Yuki WADA ,  Hitoshi KIKUCHI

IPC: H01L21/66 ,  C23C16/52 ,  C23C16/46 ,  G01J5/00 ,  C23C16/455 ,  H01L21/02 ,  H01L21/687 ,  G01K13/00 ,  C23C16/40 ,  C23C16/458

CPC classification number: G01J5/0007 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  G01J5/089 ,  G02B26/12 ,  G05D23/1931 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.

Abstract translation: 提供了一种热处理设备，用于通过将基板安装在安装在处理容器中的旋转台的表面上并在旋转台的同时通过加热部分对基板进行加热来在基板上进行预定的成膜处理。 热处理装置包括：接触型的第一温度测量部件，被配置为测量加热部件的温度; 非接触式的第二温度测量部件，被配置为在旋转台旋转的状态下测量安装在旋转台上的基板的温度; 以及温度控制部，其被配置为基于由所述第一温度测量部测量的第一测量值和由所述第二温度测量部测量的第二测量值来控制所述加热部。

公开(公告)号：US20200080895A1

公开(公告)日：2020-03-12

申请号：US16685047

申请日：2019-11-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuteru OBARA ,  Koji YOSHII ,  Yuki WADA ,  Hitoshi KIKUCHI

IPC: G01J5/00 ,  C23C16/40 ,  C23C16/52 ,  C23C16/46 ,  C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  H01L21/687 ,  G05D23/19 ,  H01L21/67 ,  G01J5/08 ,  G02B26/12

Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.

公开(公告)号：US20140345523A1

公开(公告)日：2014-11-27

申请号：US14284536

申请日：2014-05-22

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KIKUCHI ,  Takeshi Kobayashi ,  Mitsuhiro Yoshida ,  Yuta Haga ,  Yuji Takabatake ,  Naohide Ito ,  Katsuaki Sugawara ,  Masaaki Chiba ,  Hiroyuki Sato

IPC: C23C16/52 ,  G01B11/14 ,  G01B21/16

CPC classification number: C23C16/52 ,  C23C16/45551

Abstract: A substrate ejection detection device is used for substrate processing apparatus configured to process a substrate by continuously rotating a turntable holding the substrate on a concave portion formed in a surface thereof to receive the substrate thereon. In the substrate processing device, the turntable is substantially horizontally provided in a chamber. The substrate ejection detection device includes a substrate ejection determination unit configured to determine whether the substrate is out of the concave portion by determining whether the substrate exists on the concave portion while rotating the turntable.

Abstract translation: 衬底喷射检测装置用于基板处理装置，其被配置为通过将保持基板的转台连续旋转在形成在其表面上的凹部上来处理基板，以在其上接纳基板。 在基板处理装置中，转盘基本上水平地设置在室中。 基板喷射检测装置包括基板排出确定单元，其被配置为通过在旋转转盘的同时确定基板是否存在于凹部上来确定基板是否在凹部之外。