公开(公告)号：US10347503B2

公开(公告)日：2019-07-09

申请号：US14537702

申请日：2014-11-10

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown ,  Junjun Liu

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/67

Abstract: Methods for cleaning substrates are described including cleaning substrates having hardmask masks and polymer films, such part of semiconductor fabrication. Cleaning methods include ultraviolet (UV) light exposure of process gas mixtures and liquid cleaning chemistries. A substrate and/or process fluids are exposed to ultraviolet radiation. A process gas mixture being irradiated can include an oxidizing gas mixture (air, clean dry air, oxygen, peroxygen, etc.). Reducing gas mixtures, having hydrogen, can also be irradiated. Reactive species from irradiated gas mixtures are exposed to the substrate to chemically modify film properties, such as by facilitating a subsequent liquid cleaning step. Liquid cleaning chemistries on a substrate surface can also be irradiated. Such cleaning techniques enable shorter cleaning times, lower processing temperatures, and reduced damage to underlying or intermediate layers such as dielectric layers.

公开(公告)号：US09735026B2

公开(公告)日：2017-08-15

申请号：US14091923

申请日：2013-11-27

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown ,  Wallace P. Printz ,  Benjamen M. Rathsack

IPC: B08B6/00 ,  B08B7/04 ,  B08B5/00 ,  B08B7/00 ,  H01L21/311 ,  H01L21/67 ,  G03F7/42

CPC classification number: H01L21/31138 ,  G03F7/42 ,  G03F7/423 ,  G03F7/425 ,  H01L21/67051 ,  H01L21/67115

Abstract: Provided is a method for cleaning an ion implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal are optimized to achieve the two or more cleaning objectives.

公开(公告)号：US20140144463A1

公开(公告)日：2014-05-29

申请号：US14091923

申请日：2013-11-27

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown ,  Wallace P. Printz ,  Benjamen M. Rathsack

IPC: H01L21/02

CPC classification number: H01L21/31138 ,  G03F7/42 ,  G03F7/423 ,  G03F7/425 ,  H01L21/67051 ,  H01L21/67115

Abstract: Provided is a method for cleaning an on implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal are optimized to achieve the two or more cleaning objectives,

Abstract translation: 提供了一种在灰化处理之后对植入的抗蚀剂层或基板进行清洁的方法。 产生使用两个或更多个喷嘴打开和关闭处理液的流动的占空比。 将基材暴露于包含第一处理化学品的处理液体，第一处理化学品具有第一膜厚度，温度，总流速和第一组成。 基板的一部分表面同时用紫外线照射，同时控制所选择的多个清洁操作变量，以实现两个或更多个清洁目标。 清洁操作变量包括第一温度，第一组成，第一膜厚度，UV波长，UV功率，第一处理时间，第一转速，占空比和残渣去除百分比中的两个或更多个，以实现两个或更多个 清洁目标，

公开(公告)号：US09852920B2

公开(公告)日：2017-12-26

申请号：US15019248

申请日：2016-02-09

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown ,  Wallace P. Printz

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25F3/00 ,  H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  B08B3/04 ,  B08B3/08 ,  B08B3/02 ,  B08B3/00 ,  B08B9/08

CPC classification number: H01L21/31111 ,  B08B3/00 ,  B08B3/024 ,  B08B3/04 ,  B08B3/08 ,  B08B9/08 ,  B08B2203/007 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086

Abstract: Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.

公开(公告)号：US09513556B2

公开(公告)日：2016-12-06

申请号：US13748802

申请日：2013-01-24

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown ,  Wallace P. Printz

IPC: H01L21/311 ,  G03F7/42

CPC classification number: G03F7/42 ,  G03F7/422 ,  G03F7/423

Abstract: A method of process chemical temperature control for resist stripping of a substrate in a resist stripping system includes selecting at least two temperature control objectives and selecting at least two temperature control operating variables for optimization to achieve the at least two temperature control objectives. The method further includes injecting and mixing a first process chemical and a second process chemical into a treatment liquid delivery system of the resist stripping system, which forms a treatment liquid including an active species. The method further includes injecting vapor into the treatment liquid delivery system. The vapor is injected into the treatment liquid or the treatment liquid is injected into the vapor. Treatment liquid is dispensed from the dispensing device onto the substrate. At least two of the temperature control operating variables are adjusted in response to at least two metrology data values.

Abstract translation: 一种用于抗蚀剂剥离系统中的基底的抗蚀剂剥离的工艺化学温度控制的方法包括选择至少两个温度控制目标并且选择至少两个温度控制操作变量以进行优化以实现至少两个温度控制目标。 该方法还包括将第一加工化学品和第二加工化学品注入和混合到抗蚀剂剥离系统的处理液体输送系统中，所述处理液体输送系统形成包括活性物质的处理液体。 该方法还包括将蒸汽注入到处理液输送系统中。 将蒸汽注入到处理液中，或者将处理液注入蒸气中。 处理液从分配装置被分配到基底上。 响应于至少两个计量数据值来调节至少两个温度控制操作变量。

公开(公告)号：US20160155647A1

公开(公告)日：2016-06-02

申请号：US15019248

申请日：2016-02-09

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown ,  Wallace P. Printz

IPC: H01L21/311

CPC classification number: H01L21/31111 ,  B08B3/00 ,  B08B3/024 ,  B08B3/04 ,  B08B3/08 ,  B08B9/08 ,  B08B2203/007 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086

Abstract: Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.

Abstract translation: 提供了一种用于提高蚀刻处理系统中衬底上的掩模层的蚀刻速率和蚀刻选择性的方法和系统，该蚀刻处理系统被配置用于单个衬底处理。 该方法包括将衬底放置到蚀刻处理室中，含有掩蔽层的衬底和硅或氧化硅层，在升高的压力下获得蒸汽水蒸汽混合物的供应，获得用于选择性地蚀刻掩蔽物的处理液体的供应 以选择比将硅层或氧化硅层叠在一起，将处理液和蒸汽水蒸汽混合物组合，并将组合的处理液和蒸汽水蒸气混合物注入到蚀刻处理室中。 控制组合处理液体和蒸汽水蒸气混合物的流动，以保持掩模层与硅或氧化硅层的目标蚀刻速率和目标蚀刻选择比。

公开(公告)号：US10828680B2

公开(公告)日：2020-11-10

申请号：US14537652

申请日：2014-11-10

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown

IPC: B08B3/08 ,  B08B3/10 ,  B08B7/00 ,  C11D11/00 ,  H01L21/67

Abstract: Systems and methods for cleaning a substrate include a combined treatment of hydrogen peroxide and ultraviolet (UV) irradiation. Specific embodiments include the direct irradiation with 185/254 nm UV of a spinning substrate immersed under a liquid film of dilute hydrogen peroxide solution. Such a cleaning treatment can result in about a 100% improvement of TiN strip rate compared to processing with the same hydrogen peroxide solution without UV exposure. Such method can also be executed at room temperature and still provide improved cleaning efficiency.

公开(公告)号：US20200066509A1

公开(公告)日：2020-02-27

申请号：US16671564

申请日：2019-11-01

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Ian J. Brown ,  Ihsan Simms ,  Ainhoa Negreira ,  Kathleen Nafus

IPC: H01L21/027 ,  G03F7/42 ,  G03F7/40 ,  G03F7/09 ,  G03F7/00 ,  B81C1/00 ,  H01L21/311

Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

公开(公告)号：US20170092484A1

公开(公告)日：2017-03-30

申请号：US15281955

申请日：2016-09-30

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown ,  Wallace P. Printz ,  Antonio Luis Pacheco Rotondaro ,  Gentaro Goshi ,  Keisuke Egashira

IPC: H01L21/02 ,  B08B3/10 ,  C11D11/00 ,  H01L21/687 ,  H01L21/67 ,  C11D7/04 ,  B08B3/08 ,  H01L21/324

CPC classification number: H01L21/02057 ,  C11D7/04 ,  C11D11/0047 ,  F26B9/06 ,  F26B21/14 ,  H01L21/324 ,  H01L21/67028

Abstract: Method and apparatus for rinsing and drying a semiconductor substrate having a first rinse liquid such as water on the substrate in a substrate processing system. The method includes dispensing onto the substrate liquid carbon dioxide to displace any liquid present on the substrate and to dry the substrate. The apparatus includes a chamber for rinsing and drying the substrate.

公开(公告)号：US20150136186A1

公开(公告)日：2015-05-21

申请号：US14546804

申请日：2014-11-18

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown

IPC: B08B7/00 ,  B08B3/10 ,  B08B3/08

CPC classification number: H01L21/67115 ,  H01L21/67051

Abstract: Systems for cleaning substrates including cleaning of semiconductor substrates, use atmospheric or sub-atmospheric ultraviolet (UV) light to improve selectivity of conventional wet chemical cleaning in the manufacture of semiconductor devices. The UV light systems are configured to improve front-end-of-line (FEOL) (e.g., non-metal) or back-end-of-line (BEOL) (e.g., metal) removal of etch by-products (e.g., polymers) and/or mask layers from underlying materials. Systems herein can be configured with multiple lamps that irradiate substrates, gasses, and liquids at different bandwidths. Selectivity and queue time is improved while reducing processing temperatures.

Abstract translation: 用于清洁衬底的系统，包括半导体衬底的清洁，使用大气或亚大气压的紫外（UV）光，以提高常规湿式化学清洗在制造半导体器件中的选择性。 紫外光系统被配置为改进蚀刻副产物的前端（FEOL）（例如非金属）或后端（BEOL）（例如金属））去除（例如， 聚合物）和/或掩模层。 这里的系统可以配置有以不同带宽照射衬底，气体和液体的多个灯。 提高了选择性和排队时间，同时降低了处理温度。