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    BONDING APPARATUS, BONDING SYSTEM, BONDING METHOD AND RECORDING MEDIUM
    3.
    发明申请
    BONDING APPARATUS, BONDING SYSTEM, BONDING METHOD AND RECORDING MEDIUM 有权

    公开(公告)号：US20210272836A1

    公开(公告)日：2021-09-02

    申请号：US17181021

    申请日：2021-02-22

    Applicant: Tokyo Electron Limited

    Inventor： Kenji Sugakawa ,  Yosuke Omori

    IPC: H01L21/683 ,  B65H5/22

    Abstract: A bonding apparatus includes a first holder, a first transforming device, a second holder, a second transforming device, a suction device and a control device. The first holder attracts and holds a first substrate from above. The first transforming device transforms the first substrate held by the first holder such that a central portion of the first substrate is protruded downwards. The second holder is provided under the first holder, and attracts and holds a second substrate, which is to be bonded to the first substrate, from below. The second transforming device transforms the second substrate held by the second holder such that a central portion of the second substrate is protruded upwards. The suction device generates different attracting forces in multiple division regions included in an attraction region of the second substrate. The control device controls the suction device.

    BONDING APPARATUS AND BONDING SYSTEM
    4.
    发明申请
    BONDING APPARATUS AND BONDING SYSTEM 审中-公开

    公开(公告)号：US20180047699A1

    公开(公告)日：2018-02-15

    申请号：US15670072

    申请日：2017-08-07

    Applicant: Tokyo Electron Limited

    Inventor： Yosuke Omori ,  Kenji Sugakawa

    IPC: H01L23/00

    CPC classification number: H01L24/743 ,  H01L21/2007 ,  H01L21/67092

    Abstract: Deformation of substrates after the substrates are bonded can be suppressed. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit provided under the first holding unit and configured to attract and hold a second substrate from below; and a striker configured to press a central portion of the first substrate from above and bring the first substrate into contact with the second substrate. The first holding unit is configured to attract and hold a partial region of a peripheral portion of the first substrate, and the first holding unit attracts and holds the region which intersects with a direction, among directions from the central portion of the first substrate toward the peripheral portion thereof, in which a bonding region between the first substrate and the second substrate is expanded fastest.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PLACING METHOD
    6.
    发明公开
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PLACING METHOD 审中-公开

    公开(公告)号：US20240274462A1

    公开(公告)日：2024-08-15

    申请号：US18441518

    申请日：2024-02-14

    Applicant: Tokyo Electron Limited

    Inventor： Makoto Fujiwara ,  Kenji Sugakawa ,  Hideyuki Fukushima ,  Norifumi Kohama ,  Daisuke Ikemoto

    IPC: H01L21/683 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

    CPC classification number: H01L21/6838 ,  H01L21/02035 ,  H01L21/67092 ,  H01L21/67288 ,  H01L21/68714

    Abstract: A substrate processing apparatus is equipped with a holder having, on an attraction surface configured to attract a substrate, a circular central region and an annular outer region disposed outside the central region. The substrate processing apparatus includes an attracting pressure generator configured to generate an attracting pressure in the central region and each of multiple zones separated along a circumferential direction of the outer region individually; a transforming device configured to transform the central region relative to an outer edge of the holder. A controller controls: attracting the substrate to the attraction surface, based on a bending state of the substrate, by generating the attracting pressure in at least some of the multiple zones of the outer region; and transforming, after the attracting of the substrate, the attraction surface while carrying on the attracting of the substrate.

    Substrate processing apparatus and substrate processing method
    7.
    发明授权
    Substrate processing apparatus and substrate processing method 有权

    公开(公告)号：US11482431B2

    公开(公告)日：2022-10-25

    申请号：US16964008

    申请日：2019-01-11

    Applicant: Tokyo Electron Limited

    Inventor： Kimio Motoda ,  Norifumi Kohama ,  Norio Wada ,  Yosuke Omori ,  Kenji Sugakawa

    IPC: H01L21/683 ,  H01L21/67 ,  H01L21/68 ,  H01L21/687

    Abstract: A substrate processing apparatus includes a holder having thereon an attraction surface configured to attract a substrate and including an outer attracting member configured to attract a peripheral portion of the substrate and an inner attracting member configured to attract a portion of the substrate inside the peripheral portion of the substrate attracted by the outer attracting member in a diametrical direction of the attraction surface; a moving device configured to move the outer attracting member with respect to the inner attracting member; and a controller configured to control a distortion, which is caused at the substrate attracted to the attraction surface, by controlling a movement of the outer attracting member with respect to the inner attracting member.

    Substrate processing apparatus and substrate processing method
    9.
    发明授权
    Substrate processing apparatus and substrate processing method 有权

    公开(公告)号：US11735465B2

    公开(公告)日：2023-08-22

    申请号：US16962680

    申请日：2019-01-09

    Applicant: Tokyo Electron Limited

    Inventor： Kenji Sugakawa ,  Yosuke Omori

    IPC: H01L21/68 ,  H01L21/683 ,  H01L21/67 ,  H01L21/687

    CPC classification number: H01L21/6838 ,  H01L21/67092 ,  H01L21/68 ,  H01L21/6875 ,  H01L21/68742

    Abstract: A substrate processing apparatus includes a holder having thereon an attraction surface configured to attract a substrate and including, as multiple regions in which attracting pressures for attracting the substrate are controlled independently, a first region having a circular shape and a second region having an annular shape and disposed at an outside of the first region in a diametrical direction; multiple attracting pressure generators configured to independently generate the attracting pressures respectively in the multiple regions forming the attraction surface; multiple attracting pressure adjusters configured to independently adjust the attracting pressures respectively generated by the attracting pressure generators; and a controller configured to control the multiple attracting pressure generators and the multiple attracting pressure adjusters. The controller generates different attracting pressures in at least a part of the first region and in at least a part of the second region.

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