公开(公告)号：US12237173B2

公开(公告)日：2025-02-25

申请号：US17097466

申请日：2020-11-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keiko Hada ,  Akitaka Shimizu ,  Koichi Nagakura ,  Mitsuhiro Tachibana

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

公开(公告)号：US10910229B2

公开(公告)日：2021-02-02

申请号：US16065462

申请日：2016-11-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi Nagakura ,  Tamotsu Morimoto ,  Shuichiro Uda ,  Takeshi Saito

IPC: H01L21/3065 ,  H05H1/46 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3105 ,  H01L29/78

Abstract: A method capable of increasing a degree of freedom of process conditions that can be set in a plasma treatment while limiting deterioration in the electrical characteristics of a silicon or metal oxide film exposed to plasma, in performing the plasma treatment on a substrate. The method includes: processing a substrate on which a silicon or metal oxide film is formed, with plasma obtained by plasmarizing a process gas composed of a halogen compound; and subsequently, heating the substrate at a temperature of 450 degrees C. or higher in an inert gas atmosphere or a vacuum atmosphere in a state where the metal oxide film exposed to the plasma is exposed. Thus, deterioration in the characteristics of the oxide film caused by the plasma treatment are restored.

公开(公告)号：US20170301579A1

公开(公告)日：2017-10-19

申请号：US15509522

申请日：2015-09-24

Applicant: Tokyo Electron Limited

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima ,  Koichi Nagakura

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/68764 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67242 ,  H01L21/68742

Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.

公开(公告)号：US11024514B2

公开(公告)日：2021-06-01

申请号：US16523541

申请日：2019-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya Abe ,  Hidenori Miyoshi ,  Akitaka Shimizu ,  Koichi Nagakura

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/67 ,  H01L27/11582

Abstract: There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.

公开(公告)号：US10903083B2

公开(公告)日：2021-01-26

申请号：US15402419

申请日：2017-01-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keiko Hada ,  Akitaka Shimizu ,  Koichi Nagakura ,  Mitsuhiro Tachibana

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

公开(公告)号：US10192774B2

公开(公告)日：2019-01-29

申请号：US15509522

申请日：2015-09-24

Applicant: Tokyo Electron Limited

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima ,  Koichi Nagakura

IPC: H01L21/687 ,  H01L21/311 ,  H01L21/67

Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.