公开(公告)号：US11935731B2

公开(公告)日：2024-03-19

申请号：US16978134

申请日：2019-06-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Hayashi ,  Yoshihiro Umezawa ,  Shinsuke Oka

IPC: H01J37/32 ,  G05D23/19 ,  G08B21/18 ,  H05B1/02

CPC classification number: H01J37/32935 ,  G05D23/1917 ,  G05D23/193 ,  G08B21/18 ,  H01J37/32724 ,  H01J37/32926 ,  H01J37/32944 ,  H01J37/3299 ,  H05B1/023 ,  H05B1/0233 ,  H01J2237/24585 ,  H01J2237/334 ,  H05B2203/005

Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator.

公开(公告)号：US11348768B2

公开(公告)日：2022-05-31

申请号：US16868849

申请日：2020-05-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima ,  Mayo Uda

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.

公开(公告)号：US20170301579A1

公开(公告)日：2017-10-19

申请号：US15509522

申请日：2015-09-24

Applicant: Tokyo Electron Limited

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima ,  Koichi Nagakura

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/68764 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67242 ,  H01L21/68742

Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.

公开(公告)号：US11804366B2

公开(公告)日：2023-10-31

申请号：US17402398

申请日：2021-08-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01J37/32633 ,  C23C16/4412 ,  C23C16/45587 ,  C23C16/45589 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/6719 ,  H01L21/67069 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.

公开(公告)号：US10950467B2

公开(公告)日：2021-03-16

申请号：US15484389

申请日：2017-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima ,  Mayo Uda ,  Kenichi Shimono

IPC: H01L21/67 ,  F16K5/04 ,  H01J37/32 ,  F16K31/08

Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.

公开(公告)号：US10204766B2

公开(公告)日：2019-02-12

申请号：US15785500

申请日：2017-10-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro Umezawa ,  Mitsunori Ohata ,  Shinji Nagamachi ,  Kenichi Shimono

IPC: H01J37/32

Abstract: Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. Central axes of apertures of the first grid electrode and apertures of the second grid electrode are coaxial along the beam irradiation direction, and a central axis of apertures of the third grid electrode is offset in a direction orthogonal to the beam irradiation direction with respect to the central axes of the apertures of the first grid electrode and the second grid electrode.

公开(公告)号：US10192774B2

公开(公告)日：2019-01-29

申请号：US15509522

申请日：2015-09-24

Applicant: Tokyo Electron Limited

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima ,  Koichi Nagakura

IPC: H01L21/687 ,  H01L21/311 ,  H01L21/67

Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.

公开(公告)号：US11101114B2

公开(公告)日：2021-08-24

申请号：US15312225

申请日：2015-06-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311

Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.

公开(公告)号：US10685816B2

公开(公告)日：2020-06-16

申请号：US15775218

申请日：2016-11-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro Umezawa ,  Jun Sato ,  Kiyoshi Maeda ,  Mitsunori Ohata ,  Kazuya Matsumoto

IPC: H01J37/32 ,  C23F4/00 ,  H01L43/12 ,  H01F41/34 ,  H01F10/32 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01F41/30

Abstract: A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(φ, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value φ of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.

公开(公告)号：US10510514B2

公开(公告)日：2019-12-17

申请号：US15508054

申请日：2015-09-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Mayo Uda ,  Takashi Kubo

IPC: F16K3/08 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/455 ,  F16K31/04 ,  H01L21/67

Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.