公开(公告)号：US20140048210A1

公开(公告)日：2014-02-20

申请号：US14060964

申请日：2013-10-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI ,  Jun OYABU

IPC: H01J37/04

CPC classification number: H01J37/04 ,  H01J37/32091 ,  H01J37/3255 ,  H01J37/32568

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed

Abstract translation: 基板处理装置包括容纳晶片的室，设置在室内并且晶片保持在其上的基座，与基座相对的上电极和连接到基座的第二高频电源，其中上电极电 连接到地面并且可相对于基座移动。 基板处理装置将处理空间中产生的等离子体和地面之间的等离子体与电介质之间的电位差和电介质与地之间的电位差通过上电极中的电介质分离，并将a 上电极和基座之间的间隙。 因此，改变了上电极和基座之间的等离子体密度

公开(公告)号：US20150144266A1

公开(公告)日：2015-05-28

申请号：US14600288

申请日：2015-01-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32577

Abstract: The substrate processing apparatus includes a lower electrode on which a substrate is capable of being held, a high frequency power source electrically connected to the lower electrode, an upper electrode facing the lower electrode, a plasma processing space being formed between the lower electrode and the upper electrode, wherein the upper electrode includes an inner upper electrode facing a center portion of the lower electrode and an outer upper electrode facing a circumferential portion of the lower electrode, the inner electrode and the outer electrode being electrically insulated from each other, a first direct current power source electrically connected to the inner upper electrode to apply a positive direct current voltage, and a dielectric member covering a bottom surface of the upper electrode, the dielectric member facing the lower electrode with the plasma processing space in-between.

Abstract translation: 基板处理装置包括能够保持基板的下部电极，与下部电极电连接的高频电源，与下部电极相对的上部电极，形成在下部电极和下部电极之间的等离子体处理空间 上电极，其中上电极包括面向下电极的中心部分的内上电极和面向下电极的周向部分的外上电极，内电极和外电极彼此电绝缘，第一 电连接到内部上部电极以施加正的直流电压的直流电源，以及覆盖上部电极的底表面的电介质构件，介电构件面向下部电极，其间具有等离子体处理空间。

公开(公告)号：US20250004432A1

公开(公告)日：2025-01-02

申请号：US18882797

申请日：2024-09-12

Applicant: Tokyo Electron Limited

Inventor： Masaki KITSUNEZUKA ,  Jun TAMURA ,  Tsutomu MURATA ,  Masahiro SHIGA ,  Tsuyoshi MORIYA ,  Yuki KATAOKA

IPC: G05B13/04 ,  G06F21/62

Abstract: Provided is a data analysis system, a data analysis device, a data analysis method, and a recording medium. The data analysis system includes: a first data conversion device configured to conceal first data on a first product manufactured in a first manufacturing system and output the first data as first concealed data; and a data analysis device configured to select an element of the first concealed data that affects second data on a second product manufactured using the first product by evaluating a degree of influence between the first concealed data and the second data.

公开(公告)号：US20240234113A1

公开(公告)日：2024-07-11

申请号：US18398217

申请日：2023-12-28

Applicant: Tokyo Electron Limited

Inventor： Takari YAMAMOTO ,  Jun TAMURA

IPC: H01J37/32

CPC classification number: H01J37/32981 ,  H01J37/32449 ,  H01J2237/334

Abstract: A plasma processing method includes (a) acquiring emission intensity of radicals generated by ionization of a processing gas within a chamber by a sensor that detects emission intensity within the chamber, in a plasma processing in which supplying of the processing gas to the chamber and exhausting of inside of the chamber are periodically repeated; (b) acquiring a target setting value of the emission intensity; and (c) calculating a processing condition of the plasma processing which brings the emission intensity closer to the setting value, based on the emission intensity acquired by (a) and the setting value acquired by (b).

公开(公告)号：US20250147498A1

公开(公告)日：2025-05-08

申请号：US19016213

申请日：2025-01-10

Applicant: Tokyo Electron Limited ,  University of Tsukuba

Inventor： Jun TAMURA ,  Tsuyoshi MORIYA ,  Yuki KATAOKA ,  Akira IMAKURA ,  Tetsuya SAKURAI ,  Yasunori FUTAMURA ,  Xiucai YE

IPC: G05B19/418

Abstract: An information processing method, an information processing system, and a recording medium are provided. A computer executes processing of: acquiring, from apparatuses, first intermediate representations obtained by applying an intermediate representation conversion function to first data individually used by the apparatuses, acquiring, from the apparatuses, second intermediate representations obtained by applying the intermediate representation conversion function to second data commonly used by the apparatuses, adjusting parameters of an integrated representation conversion function to minimize a difference in integrated representations obtained by applying the integrated representation conversion function to the second intermediate representations acquired from the apparatuses, and deriving an apparatus difference correction function for correcting an apparatus difference between the apparatuses based on each of the first intermediate representations acquired from the apparatuses and the integrated representation conversion function for which the parameters are adjusted.

公开(公告)号：US20230239966A1

公开(公告)日：2023-07-27

申请号：US18098712

申请日：2023-01-19

Applicant: Tokyo Electron Limited

Inventor： Jun TAMURA ,  Tomohisa KITAYAMA

IPC: H05B1/02 ,  G05B13/04 ,  H01J37/32

CPC classification number: H05B1/0233 ,  G05B13/042 ,  H01J37/32724 ,  H01J37/32642 ,  H05B1/0202 ,  H01J2237/24585 ,  H01J2237/24564

Abstract: A model-based control method includes: (a) acquiring temperature control data including temperature data of each of a plurality of zones of a temperature control member provided in a processing apparatus, temperature of each of the plurality of zones being individually controllable; (b) for each zone, specifying a temperature of another zone that is weight-averaged by a weighting coefficient determined according to a magnitude of heat transfer with the another zone; (c) for each zone, specifying a parameter of a state-space model of multi-input/single-output using the specified temperature of the another zone and the temperature control data; (d) creating a state-space model of multi-input/multi-output by assigning the specified parameter of the state-space model of multi-input/single-output to each element of the state-space model of multi-input/multi-output; and (e) controlling the temperature of each of the plurality of zones of the temperature control member using the state-space model of multi-input/multi-output.