公开(公告)号：US11984319B2

公开(公告)日：2024-05-14

申请号：US16783530

申请日：2020-02-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kensaku Narushima ,  Nagayasu Hiramatsu ,  Takanobu Hotta ,  Atsushi Matsumoto ,  Masato Araki ,  Hideaki Yamasaki

IPC: H01L21/285 ,  C09K13/08 ,  C23C16/06 ,  C23C16/455 ,  C23C16/46 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/28556 ,  C09K13/08 ,  C23C16/06 ,  C23C16/45525 ,  C23C16/46 ,  H01L21/30604 ,  H01L21/32133 ,  H01L21/324 ,  H01L21/67063

Abstract: There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.

公开(公告)号：US11993841B2

公开(公告)日：2024-05-28

申请号：US16996426

申请日：2020-08-18

Applicant: Tokyo Electron Limited

Inventor： Masato Araki ,  Kohichi Satoh ,  Tadahiro Ishizaka ,  Takashi Sakuma

IPC: C23C16/40 ,  C23C16/52

CPC classification number: C23C16/405 ,  C23C16/52

Abstract: There is provided a substrate processing method which includes placing a substrate on a stage provided inside a processing container, and forming a ruthenium film on the substrate, wherein forming the ruthenium film includes repeating a cycle including: supplying a ruthenium-containing gas and a CO gas into the processing container; and stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container.

公开(公告)号：US11702734B2

公开(公告)日：2023-07-18

申请号：US17453528

申请日：2021-11-04

Applicant: Tokyo Electron Limited

Inventor： Shunji Yamakawa ,  Tadahiro Ishizaka ,  Kohichi Satoh ,  Masato Araki

IPC: C23C16/06 ,  C23C16/18 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/45557 ,  C23C16/52

Abstract: A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.