公开(公告)号：US09155183B2

公开(公告)日：2015-10-06

申请号：US13750392

申请日：2013-01-25

Applicant: Tokyo Electron Limited

Inventor： Sergey A. Voronin ,  Alok Ranjan

IPC: H01Q1/26 ,  H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

Abstract: The present invention provides a surface wave plasma source including an electromagnetic (EM) wave launcher comprising a slot antenna having a plurality of antenna slots configured to couple the EM energy from a first region above the slot antenna to a second region below the slot antenna, and a power coupling system is coupled to the EM wave launcher. A dielectric window is positioned in the second region and has a lower surface including the plasma surface. A slotted gate plate is arranged parallel with the slot antenna and is configured to be movable relative to the slot antenna between variable opacity positions including a first opaque position to prevent the EM energy from passing through the first arrangements of antenna slots, and a first transparent position to allow a full intensity of the EM energy to pass through the first arrangement of antenna slots.

Abstract translation: 本发明提供了一种表面波等离子体源，其包括电磁（EM）波发射器，其包括缝隙天线，缝隙天线具有多个天线缝隙，其被配置为将来自缝隙天线上方的第一区域的EM能量耦合到缝隙天线下方的第二区域， 并且功率耦合系统耦合到EM波发射器。 电介质窗口位于第二区域中，并且具有包括等离子体表面的下表面。 开槽栅极板与缝隙天线平行设置，并且被配置为在包括第一不透明位置的可变不透明位置之间相对于缝隙天线移动以防止EM能量穿过天线槽的第一布置，以及第一透明 以允许EM能量的全部强度通过天线槽的第一布置。

公开(公告)号：US10811273B2

公开(公告)日：2020-10-20

申请号：US16128001

申请日：2018-09-11

Applicant: Tokyo Electron Limited

Inventor： Christopher Talone ,  Erdinc Karakas ,  Andrew Nolan ,  Sergey A. Voronin ,  Alok Ranjan

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/02

Abstract: Provided is a method of modifying a surface of a substrate for improved etch selectivity of nitride etching. In an embodiment, the method includes providing a substrate with a nitride-containing structure, the nitride-containing structure having an oxygen-nitrogen layer. The method may also include performing a surface modification process on the nitride-containing structure with the oxygen-nitrogen layer using one or more gases, the surface modification process generating a cleaned nitride-containing structure. Additionally, the method may include performing a nitride etch process using the cleaned nitride-containing structure, wherein the etched nitride-containing structure are included in 5 nm or lower technology nodes, and the nitride etch process meets target etch rate and target etch selectivity, and the cleaned nitride-containing structure meet target residue cleaning objectives.

公开(公告)号：US10204832B2

公开(公告)日：2019-02-12

申请号：US15708319

申请日：2017-09-19

Applicant: Tokyo Electron Limited

Inventor： Sergey A. Voronin ,  Christopher Talone ,  Alok Ranjan

IPC: H01L21/8234 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/66 ,  H01L21/02 ,  H01L29/66

Abstract: Provided is a method of patterning structures on a substrate using an integration scheme in a patterning system, the method comprising: disposing a substrate in a processing chamber, the substrate having a plurality of structures and a pattern, the substrate including an underlying layer and a target layer, at least one structure intersecting with another structure, each intersection having an intersection angle and a corner, the integration scheme requiring a vertical corner profile at each intersection; alternatingly and sequentially etching and cleaning the substrate to transfer the pattern onto the target layer and to achieve a target vertical corner profile at each intersection; controlling selected two or more operating variables of the integration scheme in the alternating and sequential etching and cleaning operations in order to achieve target integration objectives.

公开(公告)号：US20140028190A1

公开(公告)日：2014-01-30

申请号：US13750392

申请日：2013-01-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sergey A. Voronin ,  Alok Ranjan

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

Abstract: The present invention provides a surface wave plasma source including an electromagnetic (EM) wave launcher comprising a slot antenna having a plurality of antenna slots configured to couple the EM energy from a first region above the slot antenna to a second region below the slot antenna, and a power coupling system is coupled to the EM wave launcher. A dielectric window is positioned in the second region and has a lower surface including the plasma surface. A slotted gate plate is arranged parallel with the slot antenna and is configured to be movable relative to the slot antenna between variable opacity positions including a first opaque position to prevent the EM energy from passing through the first arrangements of antenna slots, and a first transparent position to allow a full intensity of the EM energy to pass through the first arrangement of antenna slots.

Abstract translation: 本发明提供了一种包括电磁（EM）波发射器的表面波等离子体源，其包括具有多个天线缝隙的缝隙天线，所述多个天线缝隙被配置为将缝隙天线上方的第一区域的EM能量耦合到缝隙天线下方的第二区域， 并且功率耦合系统耦合到EM波发射器。 电介质窗口位于第二区域中，并且具有包括等离子体表面的下表面。 开槽栅极板与缝隙天线平行设置，并且被配置为在包括第一不透明位置的可变不透明位置之间相对于缝隙天线移动以防止EM能量穿过天线槽的第一布置，以及第一透明 以允许EM能量的全部强度通过天线槽的第一布置。

公开(公告)号：US10237916B2

公开(公告)日：2019-03-19

申请号：US14871518

申请日：2015-09-30

Applicant: Tokyo Electron Limited

Inventor： Sergey A. Voronin ,  Alok Ranjan

IPC: H05B1/02 ,  H01L21/67 ,  H01J37/32

Abstract: This disclosure relates to a temperature control system that may be used in a plasma processing system that treats microelectronic substrates using plasma. The temperature control system may include a heating array disposed adjacent to the microelectronic substrate and that may selectively generate heat at different portions of the microelectronic substrate. The heating array may include heating modules that selectively generate heat depending upon a breakover voltage of a Silicon Diode for Alternating Current (SIDAC). The amount of heat generated heat may depend upon the resistance of the heating module and the duty cycle of the variable voltage signal.

公开(公告)号：US20190080926A1

公开(公告)日：2019-03-14

申请号：US16128001

申请日：2018-09-11

Applicant: Tokyo Electron Limited

Inventor： Christopher Talone ,  Erdinc Karakas ,  Andrew Nolan ,  Sergey A. Voronin ,  Alok Ranjan

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67

Abstract: Provided is a method of modifying a surface of a substrate for improved etch selectivity of nitride etching. In an embodiment, the method includes providing a substrate with a nitride-containing structure, the nitride-containing structure having an oxygen-nitrogen layer. The method may also include performing a surface modification process on the nitride-containing structure with the oxygen-nitrogen layer using one or more gases, the surface modification process generating a cleaned nitride-containing structure. Additionally, the method may include performing a nitride etch process using the cleaned nitride-containing structure, wherein the etched nitride-containing structure are included in 5 nm or lower technology nodes, and the nitride etch process meets target etch rate and target etch selectivity, and the cleaned nitride-containing structure meet target residue cleaning objectives.

公开(公告)号：US20170094719A1

公开(公告)日：2017-03-30

申请号：US14871518

申请日：2015-09-30

Applicant: Tokyo Electron Limited

Inventor： Sergey A. Voronin ,  Alok Ranjan

IPC: H05B1/02 ,  H01J37/32 ,  H05B3/02 ,  H01L21/683 ,  H01L21/67

CPC classification number: H05B1/0233 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32724 ,  H01L21/67103 ,  H01L21/67248

Abstract: This disclosure relates to a temperature control system that may be used in a plasma processing system that treats microelectronic substrates using plasma. The temperature control system may include a heating array disposed adjacent to the microelectronic substrate and that may selectively generate heat at different portions of the microelectronic substrate. The heating array may include heating modules that selectively generate heat depending upon a breakover voltage of a Silicon Diode for Alternating Current (SIDAC). The amount of heat generated heat may depend upon the resistance of the heating module and the duty cycle of the variable voltage signal.

公开(公告)号：US10083820B2

公开(公告)日：2018-09-25

申请号：US15812047

申请日：2017-11-14

Applicant: Tokyo Electron Limited

Inventor： Sergey A. Voronin ,  Jason Marion ,  Alok Ranjan

IPC: H01J37/32

CPC classification number: H01J37/32302 ,  H01J37/32082 ,  H01J37/32238 ,  H01J37/32293

Abstract: Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

公开(公告)号：US20180138018A1

公开(公告)日：2018-05-17

申请号：US15812047

申请日：2017-11-14

Applicant: Tokyo Electron Limited

Inventor： Sergey A. Voronin ,  Jason Marion ,  Alok Ranjan

IPC: H01J37/32

CPC classification number: H01J37/32302 ,  H01J37/32082 ,  H01J37/32238 ,  H01J37/32293

Abstract: Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

公开(公告)号：US09101042B2

公开(公告)日：2015-08-04

申请号：US13720485

申请日：2012-12-19

Applicant: Tokyo Electron Limited

Inventor： Sergey A. Voronin ,  Alok Ranjan

IPC: H01Q1/26 ,  H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

Abstract: A surface wave plasma source (SWPS) is disclosed, having an electromagnetic (EM) wave launcher including a slot antenna configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the SWPS adjacent the plasma. The SWPS also includes a dielectric window positioned below the slot antenna, having a lower surface and the plasma surface. The SWPS further includes an attenuation assembly disposed between the slot antenna and the plasma surface. The attenuation assembly includes a first fluid channel substantially aligned with a first arrangement of slots in the slot antenna, and is configured to receive a first flow of a first fluid at a first fluid temperature. The SWPS finally includes a power coupling system coupled to the EM wave launcher and configured to provide EM energy to the EM wave launcher for forming the plasma.

Abstract translation: 公开了一种表面波等离子体源（SWPS），其具有电磁（EM）波发射器，其包括缝隙天线，缝隙天线被配置为通过在相邻的SWPS的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体 等离子体。 SWPS还包括位于缝隙天线下方的介电窗口，具有下表面和等离子体表面。 SWPS还包括设置在缝隙天线和等离子体表面之间的衰减组件。 衰减组件包括基本上与缝隙天线中的槽的第一布置基本对准的第一流体通道，并且构造成在第一流体温度下接收第一流体的第一流。 SWPS最终包括耦合到EM波发射器的功率耦合系统，并被配置为向用于形成等离子体的EM波发射器提供EM能量。