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    Method for operation instability detection in a surface wave plasma source
    1.
    发明授权
    Method for operation instability detection in a surface wave plasma source 有权

    公开(公告)号：US10651017B2

    公开(公告)日：2020-05-12

    申请号：US15416422

    申请日：2017-01-26

    Applicant: Tokyo Electron Limited

    Inventor： Sergey Voronin ,  Jason Marion ,  Alok Ranjan

    IPC: H01J37/32 ,  G01N21/73 ,  G01N21/88 ,  H01L21/3065 ,  H01L21/66

    Abstract: Provided are methods and systems for operation instability detection in a surface wave plasma source. In an embodiment a system for plasma processing may include a surface wave plasma source configured to generate a plasma field. The system may also include an optical sensor configured to generate information characteristic of optical energy collected in a region proximate to the surface wave plasma source. Additionally, the system may include a sensor logic unit configured to detect a region of instability proximate to the surface wave plasma source in response to the information generated by the optical sensor.

    Method for Etching Features in a Layer in a Substrate
    2.
    发明公开
    Method for Etching Features in a Layer in a Substrate 审中-公开

    公开(公告)号：US20240234158A1

    公开(公告)日：2024-07-11

    申请号：US18151223

    申请日：2023-01-06

    Applicant: Tokyo Electron Limited

    Inventor： Indroneil Roy ,  Jason Marion ,  Yusuke Yoshida ,  Yun Han ,  Aelan Mosden ,  Ken Kobayashi

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

    CPC classification number: H01L21/30655 ,  H01J37/32816 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31144 ,  H01J2237/3345 ,  H01J2237/3347

    Abstract: A method for fabricating a semiconductor device includes forming a pattern of trenches by etching a first layer formed over an underlying layer of a substrate, each of the trenches having an aspect ratio (AR) in a range with a lower limit of a first AR and an upper limit of a second AR, the pattern including a low-AR trench having the first AR and a high-AR trench having the second AR, the AR of a trench being a ratio of its depth to its opening width, the etching including: executing a first recipe in a plasma chamber to anisotropically etch the first layer for a first duration by flowing etchants through the chamber, an etch rate of the first layer being higher on the low-AR trench relative to that on the high-AR trench; and after executing the first recipe, executing a second recipe in the plasma chamber to etch the first layer anisotropically and concurrently deposit oxygen-containing etch byproducts to passivate exposed portions of sides of the trenches, the etch rate of the first layer being lower on the low-AR trench relative to that on the high-AR trench, wherein executing the second recipe increases a relative oxygen content in the plasma chamber from a first value during the executing of the first recipe to a second value.

    Methods for stability monitoring and improvements to plasma sources for plasma processing
    3.
    发明授权
    Methods for stability monitoring and improvements to plasma sources for plasma processing 有权

    公开(公告)号：US10818482B2

    公开(公告)日：2020-10-27

    申请号：US16576327

    申请日：2019-09-19

    Applicant: Tokyo Electron Limited

    Inventor： Yusuke Yoshida ,  Jason Marion ,  Sergey Voronin ,  Alok Ranjan

    IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065

    Abstract: Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.

    MANUFACTURING METHODS TO REDUCE SURFACE PARTICLE IMPURITIES AFTER A PLASMA PROCESS
    4.
    发明申请
    MANUFACTURING METHODS TO REDUCE SURFACE PARTICLE IMPURITIES AFTER A PLASMA PROCESS 审中-公开

    公开(公告)号：US20180323045A1

    公开(公告)日：2018-11-08

    申请号：US15969472

    申请日：2018-05-02

    Applicant: Tokyo Electron Limited

    Inventor： Jason Marion ,  Yusuke Yoshida ,  Brendan Bathrick ,  Sergey Voronin ,  Alok Ranjan

    IPC: H01J37/32 ,  H01L21/67

    CPC classification number: H01J37/32834 ,  H01J37/32091 ,  H01J37/32816 ,  H01J2237/0041 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

    Abstract: Manufacturing methods are disclosed to reduce surface particle impurities after a plasma process (e.g., etch, deposition, etc.) by repelling particles trapped within particle wells to reduce surface particle impurities on microelectronic workpieces after termination of the plasma process. Rather than turn off pressure and source power at the termination of the plasma process, the disclosed embodiments first enter a sequence to adjust process parameters to repel particles in a particle well in order to reduce or eliminate the particle well prior to terminating the plasma process. During this particle repel sequence, certain disclosed embodiments adjust parameters to maintain an electrostatic field above the surface of the wafer utilizing low plasma density and ion energy conditions that help to repel particles from the microelectronic workpiece. The disclosed methods allow for the particle well to be exhausted well prior to the collapse of electrostatic forces when the plasma process is terminated.

    METHODS FOR STABILITY MONITORING AND IMPROVEMENTS TO PLASMA SOURCES FOR PLASMA PROCESSING
    6.
    发明申请
    METHODS FOR STABILITY MONITORING AND IMPROVEMENTS TO PLASMA SOURCES FOR PLASMA PROCESSING 审中-公开

    公开(公告)号：US20200105510A1

    公开(公告)日：2020-04-02

    申请号：US16576327

    申请日：2019-09-19

    Applicant: Tokyo Electron Limited

    Inventor： Yusuke Yoshida ,  Jason Marion ,  Sergey Voronin ,  Alok Ranjan

    IPC: H01J37/32 ,  H01L21/66

    Abstract: Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.

    DUAL-FREQUENCY SURFACE WAVE PLASMA SOURCE
    8.
    发明申请
    DUAL-FREQUENCY SURFACE WAVE PLASMA SOURCE 审中-公开

    公开(公告)号：US20180138018A1

    公开(公告)日：2018-05-17

    申请号：US15812047

    申请日：2017-11-14

    Applicant: Tokyo Electron Limited

    Inventor： Sergey A. Voronin ,  Jason Marion ,  Alok Ranjan

    IPC: H01J37/32

    CPC classification number: H01J37/32302 ,  H01J37/32082 ,  H01J37/32238 ,  H01J37/32293

    Abstract: Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

    System and method of plasma discharge ignition to reduce surface particles
    9.
    发明授权
    System and method of plasma discharge ignition to reduce surface particles 有权

    公开(公告)号：US10818502B2

    公开(公告)日：2020-10-27

    申请号：US15818273

    申请日：2017-11-20

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Sergey Voronin ,  Jason Marion ,  Yusuke Yoshida ,  Alok Ranjan ,  Takashi Enomoto ,  Yoshio Ishikawa

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

    Abstract: Systems and methods are disclosed for plasma discharge ignition to reduce surface particles and thereby decrease defects introduced during plasma processing. A microelectronic workpiece is positioned on a holder within a process chamber that includes a first radio frequency (RF) power source configured to couple RF power to a top portion of the process chamber, a second RF power source configured to couple RF power to the holder, and a direct current (DC) power supply. Initially, a process gas for plasma process is flowed into the process chamber. The process gas is ignited to form plasma by activating the second RF power source to apply RF power to the holder. Subsequently, the microelectronic workpiece is clamped to the holder by applying the positive voltage to the holder with the DC power supply, and the first RF power source is activated to maintain the plasma within the process chamber.

    METHOD OF PLASMA DISCHARGE IGNITION TO REDUCE SURFACE PARTICLES
    10.
    发明申请
    METHOD OF PLASMA DISCHARGE IGNITION TO REDUCE SURFACE PARTICLES 审中-公开

    公开(公告)号：US20180144946A1

    公开(公告)日：2018-05-24

    申请号：US15818273

    申请日：2017-11-20

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Sergey Voronin ,  Jason Marion ,  Yusuke Yoshida ,  Alok Ranjan ,  Takashi Enomoto ,  Yoshio Ishikawa

    IPC: H01L21/3065 ,  H01L21/683 ,  H01L21/67

    Abstract: Systems and methods are disclosed for plasma discharge ignition to reduce surface particles and thereby decrease defects introduced during plasma processing. A microelectronic workpiece is positioned on a holder within a process chamber that includes a first radio frequency (RF) power source configured to couple RF power to a top portion of the process chamber, a second RF power source configured to couple RF power to the holder, and a direct current (DC) power supply. Initially, a process gas for plasma process is flowed into the process chamber. The process gas is ignited to form plasma by activating the second RF power source to apply RF power to the holder. Subsequently, the microelectronic workpiece is clamped to the holder by applying the positive voltage to the holder with the DC power supply, and the first RF power source is activated to maintain the plasma within the process chamber.

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