公开(公告)号：US20210384009A1

公开(公告)日：2021-12-09

申请号：US17288415

申请日：2019-10-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoru KAWAKAMI ,  Tadashi MITSUNARI ,  Shinya IWASHITA ,  Yusuke SUZUKI

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

Abstract: In a plasma processing apparatus, a processing chamber is provided. First electrodes are disposed inside the processing chamber and supplied with radio frequency powers. The second electrode is disposed inside the processing chamber and functions as a counter electrode for the first electrodes. The power supply source supplies radio frequency powers to the first electrodes to generate plasma between the first electrodes and the second electrode and process a target object using the plasma. The allocation setting unit is disposed between the power supply source and at least one of the first electrodes to set power allocations of the radio frequency powers to be supplied to the first electrodes. Further, the allocation setting unit has series circuits in each of which an impedance circuit and a switching element are connected in series. The series circuits are connected in parallel. The control device controls the switching elements in the series circuits.

公开(公告)号：US20210301402A1

公开(公告)日：2021-09-30

申请号：US17265288

申请日：2019-07-29

Applicant: Tokyo Electron Limited

Inventor： Yusuke SUZUKI ,  Tsuyoshi MORIYA ,  Tadashi MITSUNARI ,  Shinya IWASHITA ,  Yoshinori MORISADA ,  Naotaka NORO ,  Munehito KAGAYA ,  Satoshi TANAKA

IPC: C23C16/52 ,  C23C16/50 ,  C23C16/455

Abstract: A film forming apparatus includes: a processing container; a support mechanism configured to support a substrate to be capable of being raised and lowered; a first gas supplier configured to supply a first gas to a front surface of the substrate supported on the support mechanism; a second gas supplier configured to supply a second gas to a rear surface of the substrate supported on the support mechanism; and a third gas supplier configured to supply a third gas to at least one of the front surface and the rear surface of the substrate supported on the support mechanism.

公开(公告)号：US20190385815A1

公开(公告)日：2019-12-19

申请号：US16431565

申请日：2019-06-04

Applicant: Tokyo Electron Limited

Inventor： Shinya IWASHITA ,  Ayuta SUZUKI ,  Takahiro SHINDO ,  Kazuki DEMPOH ,  Tatsuo MATSUDO ,  Yasushi MORITA ,  Takamichi KIKUCHI ,  Tsuyoshi MORIYA

IPC: H01J37/32 ,  H01L21/67

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

公开(公告)号：US20190181015A1

公开(公告)日：2019-06-13

申请号：US16275674

申请日：2019-02-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoaki OGIWARA ,  Hiroyuki TAKAHASHI ,  Takuya ABE ,  Masahiko TOMITA ,  Shinya IWASHITA

IPC: H01L21/311 ,  H01L21/3105 ,  H01L21/67

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.

公开(公告)号：US20170294319A1

公开(公告)日：2017-10-12

申请号：US15480707

申请日：2017-04-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoaki OGIWARA ,  Hiroyuki TAKAHASHI ,  Takuya ABE ,  Masahiko TOMITA ,  Shinya IWASHITA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/3105

CPC classification number: H01L21/31116 ,  H01L21/3105 ,  H01L21/67017 ,  H01L21/67069

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.

公开(公告)号：US20230051432A1

公开(公告)日：2023-02-16

申请号：US17974193

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Shinya IWASHITA ,  Ayuta SUZUKI ,  Takahiro SHINDO ,  Kazuki DEMPOH ,  Tatsuo MATSUDO ,  Yasushi MORITA ,  Takamichi KIKUCHI ,  Tsuyoshi MORIYA

IPC: H01J37/32 ,  H01L21/67

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

公开(公告)号：US20210375589A1

公开(公告)日：2021-12-02

申请号：US17286364

申请日：2019-10-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Yusuke SUZUKI ,  Shinya IWASHITA ,  Tadashi MITSUNARI

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/34 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02 ,  C23C16/458

Abstract: When a titanium-containing gas and an oxidizing gas, or a silicon-containing gas and a nitriding gas, are alternately supplied from a gas supplier and radio frequency power is supplied to each of a first electrode and a second electrode from a power supply, parallel to the supply of the oxidizing gas or the nitriding gas, so as to generate plasma and to perform a film formation, a magnitude of the radio frequency power to be supplied to each of the first electrode and the second electrode is controlled.

公开(公告)号：US20210142982A1

公开(公告)日：2021-05-13

申请号：US16754402

申请日：2018-09-26

Applicant: Tokyo Electron Limited

Inventor： Shinya IWASHITA ,  Takamichi KIKUCHI ,  Naotaka NORO ,  Toshio HASEGAWA ,  Tsuyoshi MORIYA

IPC: H01J37/32 ,  H01J37/20

Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.