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公开(公告)号：US20230062662A1
公开(公告)日：2023-03-02
申请号：US17760182
申请日：2021-01-29
发明人： Ayuta SUZUKI , Hidefumi MATSUI , Atsushi KUBO
摘要： A measurement system including an imaging device and a plasma processing device having a plasma generator configured to generate plasma from a gas supplied into a processing chamber and a controller. The imaging device is configured to generate optical information of the plasma from image data of imaged plasma in the processing chamber, and the controller is configured to convert the generated optical information of the plasma into a plasma parameter that determines physical characteristics of the plasma with reference to a storage that stores correlation information between the optical information of the plasma and measurement results of the plasma parameter.
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公开(公告)号：US20190013195A1
公开(公告)日：2019-01-10
申请号：US16028656
申请日：2018-07-06
发明人： Taiki KATO , Hisashi HIGUCHI , Kosuke YAMAMOTO , Ayuta SUZUKI , Kazuyoshi MATSUZAKI , Yuji SESHIMO , Susumu TAKADA , Yoshihiro TAKEZAWA
IPC分类号： H01L21/02 , C23C16/455 , C23C16/40
摘要： A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.
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公开(公告)号：US20180158671A1
公开(公告)日：2018-06-07
申请号：US15835157
申请日：2017-12-07
发明人： Ayuta SUZUKI , Kosuke YAMAMOTO , Kazuyoshi MATSUZAKI , Munehito KAGAYA , Tsuyoshi MORIYA , Tadashi MITSUNARI , Atsushi KUBO
IPC分类号： H01L21/02 , H01L21/67 , C23C16/448 , C23C16/458 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/448 , C23C16/45525 , C23C16/45565 , C23C16/4582 , G05D16/00 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/67017 , H01L21/68742
摘要： A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.
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公开(公告)号：US20190385815A1
公开(公告)日：2019-12-19
申请号：US16431565
申请日：2019-06-04
发明人： Shinya IWASHITA , Ayuta SUZUKI , Takahiro SHINDO , Kazuki DEMPOH , Tatsuo MATSUDO , Yasushi MORITA , Takamichi KIKUCHI , Tsuyoshi MORIYA
摘要： A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.
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公开(公告)号：US20230051432A1
公开(公告)日：2023-02-16
申请号：US17974193
申请日：2022-10-26
发明人： Shinya IWASHITA , Ayuta SUZUKI , Takahiro SHINDO , Kazuki DEMPOH , Tatsuo MATSUDO , Yasushi MORITA , Takamichi KIKUCHI , Tsuyoshi MORIYA
摘要： A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.
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公开(公告)号：US20200312634A1
公开(公告)日：2020-10-01
申请号：US16831032
申请日：2020-03-26
发明人： Hirofumi OHTA , Hidetoshi HANAOKA , Ayuta SUZUKI
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes a conductive mounting table, a conductive member, and a first insulating member. The conductive mounting table has a mounting portion on which a substrate is mounted and a stepped portion positioned lower than the mounting portion. The conductive member is disposed on the stepped portion and extends outward over an outer periphery of the mounting table. Further, a first insulating member is disposed on or above an upper surface of the conductive member.
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公开(公告)号：US20180166298A1
公开(公告)日：2018-06-14
申请号：US15831811
申请日：2017-12-05
IPC分类号： H01L21/67 , C23C16/455
CPC分类号： H01L21/67017 , C23C16/455 , C23C16/45508 , C23C16/45525 , C23C16/45565 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/67
摘要： In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. The gas supply part includes a central region and one or more outer peripheral regions surrounding the central region. The gas supply holes and the introduction ports are provided for each of the central region and the outer peripheral regions. The processing gas whose gas supply conditions are adjusted for each of the regions is continuously and outwardly supplied in a circumferential direction around the center axis from the introduction ports.
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公开(公告)号：US20180155830A1
公开(公告)日：2018-06-07
申请号：US15833889
申请日：2017-12-06
发明人： Ayuta SUZUKI , Kosuke Yamamoto , Kazuyoshi Matsuzaki , Munehito Kagaya , Tsuyoshi Moriya , Tadashi Mitsunari
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4412 , C23C16/45508 , C23C16/45517 , C23C16/45561
摘要： A gas supply and exhaust structure, for supplying and exhausting a raw material gas into and from a chamber having a substrate mounting surface at a position corresponding to a central portion of an inner top surface, includes a side gas supply unit having gas supply ports arranged circumferentially and vertically on an inner side surface of the chamber and configured to supply the raw material gas through the gas supply ports toward a central axis of the chamber, and an exhaust unit having a gas exhaust port formed at the central portion of the inner top surface of the chamber and configured to exhaust the raw material gas. The inner top surface has an inclined surface inclined such that a distance between the inner top surface and an inner bottom surface of the chamber becomes smaller from the inner side surface toward the central axis.
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