公开(公告)号：US20240240324A1

公开(公告)日：2024-07-18

申请号：US18615192

申请日：2024-04-04

Applicant: Tokyo Electron Limited ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Masaru HORI ,  Makoto SEKINE ,  Hirotsugu SUGIURA ,  Tsuyoshi MORIYA ,  Satoshi TANAKA ,  Yoshinori MORISADA

IPC: C23C16/52 ,  C23C16/26 ,  H01J37/32 ,  H01L21/033

CPC classification number: C23C16/52 ,  C23C16/26 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/0332 ,  H01J2237/332

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)≥0.5.

公开(公告)号：US20220291035A1

公开(公告)日：2022-09-15

申请号：US17692338

申请日：2022-03-11

Applicant: Tokyo Electron Limited

Inventor： Takashi ASAKAWA ,  Satoshi TANAKA ,  Ryota AOI

IPC: G01F15/06

Abstract: An aggregation method includes: acquiring log information including a measurement value of a force used by a processing apparatus and a measurement date and time, the measurement value being measured by a sensor of the processing apparatus that processes a substrate; storing the measurement value of the force and the measurement date and time included in the acquired log information in a storage unit; and integrating the measurement value of the force associated with the measurement date and time in a specified aggregation period with reference to the storage unit to calculate an integrated value of the force for each processing apparatus.

公开(公告)号：US20210301402A1

公开(公告)日：2021-09-30

申请号：US17265288

申请日：2019-07-29

Applicant: Tokyo Electron Limited

Inventor： Yusuke SUZUKI ,  Tsuyoshi MORIYA ,  Tadashi MITSUNARI ,  Shinya IWASHITA ,  Yoshinori MORISADA ,  Naotaka NORO ,  Munehito KAGAYA ,  Satoshi TANAKA

IPC: C23C16/52 ,  C23C16/50 ,  C23C16/455

Abstract: A film forming apparatus includes: a processing container; a support mechanism configured to support a substrate to be capable of being raised and lowered; a first gas supplier configured to supply a first gas to a front surface of the substrate supported on the support mechanism; a second gas supplier configured to supply a second gas to a rear surface of the substrate supported on the support mechanism; and a third gas supplier configured to supply a third gas to at least one of the front surface and the rear surface of the substrate supported on the support mechanism.

公开(公告)号：US20210027980A1

公开(公告)日：2021-01-28

申请号：US17067912

申请日：2020-10-12

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Naoki MATSUMOTO ,  Satoshi TANAKA ,  Toru ITO

IPC: H01J37/21 ,  H01J37/32

Abstract: A plasma etching apparatus includes a chamber, a susceptor in the chamber, an electrostatic chuck provided on the susceptor, and a high frequency power supply for supplying a high frequency power for generating a plasma in the chamber. The plasma etching apparatus also includes a gas inlet port provided in the chamber and configured to supply an etching gas, and a ring disposed in an outer periphery of a substrate supported by the electrostatic chuck that is positioned over the susceptor. An inner diameter of the ring is larger than an outer diameter of the substrate. The ring is separately positioned at a separation distance over the susceptor. The substrate is etched by using the plasma generated by the high frequency power that is supplied by the high frequency power supply. The separation distance between the ring and the susceptor is adjustable when the substrate is etched.

公开(公告)号：US20190120703A1

公开(公告)日：2019-04-25

申请号：US16095114

申请日：2017-04-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi MITSUNARI ,  Satoshi TANAKA ,  Tsuyoshi MORIYA ,  Toshiya MATSUDA ,  Masaaki MIYAGAWA ,  Kenya IWASAKI

IPC: G01K11/32

Abstract: A temperature measurement substrate according to an embodiment of the present disclosure includes: a substrate which is any one of a semiconductor wafer and a substrate for a flat panel display; and at least one optical fiber laid on a surface of the substrate and having a first pattern portion and a second pattern portion formed more densely than the first pattern portion.

公开(公告)号：US20240387301A1

公开(公告)日：2024-11-21

申请号：US18429645

申请日：2024-02-01

Applicant: Tokyo Electron Limited

Inventor： Hirokazu KYOKANE ,  Satoshi TANAKA

IPC: H01L21/66 ,  G01B11/06

Abstract: A substrate processing system includes a substrate support that supports an outer edge of a substrate having a first surface and a second surface opposite to the first surface, a processing container that accommodates the substrate and the substrate support to perform a substrate processing on the substrate, and a substrate transfer unit that transfers the substrate. Further, the substrate processing system includes a measurement unit that measures an index related to a film thickness of a film stacked on the second surface, and an estimation unit that calculates the film thickness of the film on the second surface based on the measured index related to the film thickness of the film on the second surface and calculates a film thickness of a film stacked on the first surface based on the calculated film thickness of the film on the second surface.

公开(公告)号：US20220010424A1

公开(公告)日：2022-01-13

申请号：US17291930

申请日：2019-10-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke SUZUKI ,  Tsuyoshi MORIYA ,  Kazuhide HASEBE ,  Atsushi ENDO ,  Satoshi TANAKA

IPC: C23C16/04 ,  C23C16/455 ,  H01L21/308 ,  H01L21/66

Abstract: A film forming method is provided. In the film forming method, a mask is prepared based on a measurement result of a surface state of a substrate. The mask is transferred into a process chamber and the substrate is transferred into the process chamber. Then, a film is formed on a back surface of the substrate while the mask is disposed onto the back surface of the substrate.